公开(公告)号：US5418357A

公开(公告)日：1995-05-23

申请号：US76960

申请日：1993-06-16

申请人： Katsushi Inoue ,  Seiichiro Tamai ,  Keiichi Kobayashi ,  Marie Dosho

发明人： Katsushi Inoue ,  Seiichiro Tamai ,  Keiichi Kobayashi ,  Marie Dosho

IPC分类号： G06K7/10

CPC分类号： G06K7/10881 ,  G06K7/1417 ,  G06K2207/1017

摘要： A bar-code reader includes a selection circuit which selects one of two operating modes of reading a bar code label by using the whole section or partial section of an image sensor.

摘要翻译： 条形码读取器包括选择电路，其选择通过使用图像传感器的整个部分或部分部分读取条形码标签的两种操作模式之一。

公开(公告)号：US5471041A

公开(公告)日：1995-11-28

申请号：US77096

申请日：1993-06-16

申请人： Katsushi Inoue ,  Seiichiro Tamai ,  Keiichi Kobayashi ,  Marie Dosho

发明人： Katsushi Inoue ,  Seiichiro Tamai ,  Keiichi Kobayashi ,  Marie Dosho

IPC分类号： G06K7/10

CPC分类号： G06K7/1093 ,  G06K7/1417

摘要： A bar-code reader which reads a bar code label through the scanning operation comprises a waveform processing circuit, a memory unit for storing data in a serial manner in synchronism with the scanning across the bar code symbol, an extraction unit for extracting a bar code symbol from the output of the memory unit, and a decoding unit for decoding the bar code symbol based on the output of the extraction unit.

摘要翻译： 通过扫描操作读取条形码标签的条形码读取器包括：波形处理电路，用于与跨越条形码符号的扫描同步地以串行方式存储数据的存储单元;提取单元，用于提取条形码 来自存储器单元的输出的符号，以及用于基于提取单元的输出对条形码符号进行解码的解码单元。

公开(公告)号：US5349171A

公开(公告)日：1994-09-20

申请号：US919906

申请日：1992-07-27

申请人： Seiichiro Tamai ,  Keiichi Kobayashi ,  Hideki Imai ,  Takahiro Yamao

发明人： Seiichiro Tamai ,  Keiichi Kobayashi ,  Hideki Imai ,  Takahiro Yamao

IPC分类号： G06K7/10 ,  H04N5/335 ,  H04N5/372

CPC分类号： G06K7/10841 ,  G06K7/10851

摘要： A bar code reader has a CCD for producing an image signal, an amplifier for amplifying the image signal from the CCD and a digitalizing circuit for changing the image signal to binary signal. The CCD operates with an operating voltage Vcc less than 8 V. The amplifier has first and second operational amplifiers each having one voltage source terminal connected to Vcc of 5 V and the other voltage source terminal connected to ground. Also, the digitalizing circuit has a third operational amplifier having one voltage source terminal connected to Vcc of 5 V and the other voltage source terminal connected to ground.

摘要翻译： 条形码读取器具有用于产生图像信号的CCD，用于放大来自CCD的图像信号的放大器和用于将图像信号改变为二进制信号的数字化电路。 CCD以小于8V的工作电压Vcc工作。放大器具有第一和第二运算放大器，每个具有连接到Vcc为5V的一个电压源端子，另一个电压源端子连接到地。 此外，数字化电路具有第三运算放大器，其一个电压源端子连接到Vcc为5V，另一个电压源端子连接到地。

公开(公告)号：US07208811B2

公开(公告)日：2007-04-24

申请号：US11082690

申请日：2005-03-18

申请人： Seiichiro Tamai

发明人： Seiichiro Tamai

IPC分类号： H01L31/06

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14687 ,  H01L31/035236

摘要： A photo-detecting device that enables a solid-state image sensor to meet the requirement of higher quality imaging including: a first silicon substrate 120 having p- and n-type regions; a first SOI substrate 130 in which a second silicon substrate 132 having p- and n-type regions is formed on a first SOI insulation layer 131; and a second SOI substrate 140 in which a third silicon substrate 142 having p- and n-type regions is formed on a second SOI insulation layer 141. Each pn-junction of the first silicon substrate 120, the second silicon substrate 132, and the third silicon substrate 142 forms a photodiode for converting incident light into electric charges. The depth of each pn-junction, which is measured from the surface of the second SOI substrate 140 irradiated with the light, is determined according to absorption length of light to be converted into electric charges.

摘要翻译： 一种能够使固态图像传感器满足更高质量成像要求的光电检测装置，包括：具有p型和n型区域的第一硅衬底120; 第一SOI衬底130，其中在第一SOI绝缘层131上形成具有p型和n型区的第二硅衬底132; 以及第二SOI衬底140，其中在第二SOI绝缘层141上形成具有p型和n型区的第三硅衬底142.第一硅衬底120，第二硅衬底132和第二硅衬底132的每个pn结 第三硅衬底142形成用于将入射光转换成电荷的光电二极管。 根据照射光的第二SOI衬底140的表面测量的每个pn结的深度根据要转换成电荷的光的吸收长度来确定。

公开(公告)号：US20060011954A1

公开(公告)日：2006-01-19

申请号：US11180581

申请日：2005-07-14

申请人： Tetsuzo Ueda ,  Seiichiro Tamai

发明人： Tetsuzo Ueda ,  Seiichiro Tamai

IPC分类号： H01L31/113

CPC分类号： H01L31/101 ,  H01L27/14625 ,  H01L27/14647 ,  H01L31/02165 ,  H01L31/02327

摘要： A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an epitaxial layer formed on the semiconductor substrate by epitaxial growth. The epitaxial layer has a multilayer structure including: a first pn junction layer; a first insulating layer; a second pn junction layer; a second insulating layer; and a third pn junction layer. The first insulating layer and the second insulating layer have openings, and the first pn junction layer and the second pn junction layer are adjacent to each other through the openings of the first insulating layer which is placed in between these pn junction layers, and the second pn junction layer and the third pn junction layer are adjacent to each other through the openings of the second insulating layer which is placed in between these pn junction layers. Each of the insulating layers has a periodic structure of refractive indices in the stacking direction as well as a periodic structure of similar-shaped openings which are concentric in the in-plane direction, and therefore has filtering and light condensing functions for the pn junction layer which is formed beneath the insulating layer.

摘要翻译： 提供了一种半导体光电检测装置，用于使固态图像传感器能够满足更高质量成像的要求，并且降低成本。 本发明的受光器件包括：半导体衬底; 以及通过外延生长形成在半导体衬底上的外延层。 外延层具有多层结构，其包括：第一pn结层; 第一绝缘层; 第二pn结层; 第二绝缘层; 和第三个pn结层。 第一绝缘层和第二绝缘层具有开口，并且第一pn结层和第二pn结层通过放置在这些pn结层之间的第一绝缘层的开口彼此相邻，并且第二绝缘层 pn结层和第三pn结层通过放置在这些pn结层之间的第二绝缘层的开口彼此相邻。 绝缘层中的每一层具有层叠方向的折射率的周期性结构以及在面内方向上同心的类似形状的开口的周期性结构，因此具有用于pn结层的滤波和聚光功能 其形成在绝缘层下方。

公开(公告)号：US20050215430A1

公开(公告)日：2005-09-29

申请号：US11054525

申请日：2005-02-10

申请人： Seiichiro Tamai

发明人： Seiichiro Tamai

IPC分类号： F21V3/04 ,  A61L9/18 ,  A61L9/20 ,  B01D53/88 ,  B01J35/00 ,  B01J35/02 ,  B01J37/02 ,  C07C1/00 ,  F21Y103/00 ,  H01J61/35

CPC分类号： A61L9/205 ,  A61L9/18 ,  B01D53/885 ,  B01D2255/802 ,  B01J35/004 ,  B01J37/0244 ,  H01J61/35

摘要： An object of the present invention is to provide a photocatalyst material which fully causes a photocatalyst effect, the material comprising: a phosphorescent layer 110 which is formed above a base substance 100, and has a light-emitting wavelength in the wavelength band of 400 to 700 nm; a translucent layer 120 which is formed above the phosphorescent layer 110 and made of photonic crystal that (i) effectively collects light entering the phosphorescent layer 110, and (iii) effectively collects light entering from the phosphorescent layer 110 into a photocatalyst layer 130; and the photocatalyst layer 130 which is formed above the translucent layer 120, and causes the photocatalyst function using light having the wavelength band of 400 to 700 nm.

摘要翻译： 本发明的目的是提供一种完全引起光催化剂效果的光催化剂材料，该材料包括：形成于基体物质100上方的发光波长为400〜 700nm; 形成在磷光层110上方并由光子晶体制成的半透明层120（i）有效地收集进入磷光层110的光，以及（iii）有效地将从磷光层110入射的光聚集到光催化层130中; 以及形成在透光性层120的上方的光催化剂层130，使用波长带为400〜700nm的光而进行光催化剂功能。

公开(公告)号：US07031946B1

公开(公告)日：2006-04-18

申请号：US09914336

申请日：2000-12-26

申请人： Seiichiro Tamai ,  Shinichi Michisaka

发明人： Seiichiro Tamai ,  Shinichi Michisaka

IPC分类号： G06F17/60

CPC分类号： G07F7/1008 ,  G06F12/1466 ,  G06F21/79 ,  G06F2221/2103 ,  G06F2221/2129 ,  G06F2221/2141 ,  G06K19/0723 ,  G06K19/07758 ,  G06K2017/0077 ,  G06Q10/08 ,  G06Q20/341 ,  G06Q20/3674 ,  G06Q20/4097 ,  G07C3/00 ,  G07C9/00111 ,  G07F7/02

摘要： To provide a contactless IC tag for storing secret information for each of multiple stages of a life cycle from manufacture to disposal, and an access device for reading/writing information in secrecy from/to the contactless IC tag for each stage. A memory unit has stage storage areas as many as the stages. Each stage storage area is identified by a secret stage identifier. A controlling unit receives an access identifier from the access device in secrecy, via an antenna unit, a demodulating unit, and an instruction decoding unit. Upon judging that the access identifier properly identifies one of the stage storage areas, the controlling unit receives access information from the access device, and an inputting/outputting unit accesses the stage storage area based on the access information.

摘要翻译： 提供用于存储从制造到处置的生命周期的多个阶段中的每个阶段的秘密信息的非接触IC标签，以及用于从每个阶段的非接触式IC标签中保密地读取/写入信息的访问装置。 存储单元具有与阶段一样多的阶段存储区域。 每个阶段存储区域由秘密阶段标识符标识。 控制单元经由天线单元，解调单元和指令解码单元以秘密的方式从接入设备接收接入标识符。 控制单元在判断出访问标识符正确地识别其中一个阶段存储区域时，从接入设备接收访问信息，并且输入/输出单元基于访问信息访问阶段存储区域。

公开(公告)号：US06826224B2

公开(公告)日：2004-11-30

申请号：US09818346

申请日：2001-03-27

申请人： Masaaki Yuri ,  Seiichiro Tamai ,  Kunio Ito ,  Masaru Kazumura

发明人： Masaaki Yuri ,  Seiichiro Tamai ,  Kunio Ito ,  Masaru Kazumura

IPC分类号： H01S308

CPC分类号： A61B18/20 ,  A61F9/008 ,  A61F9/00802 ,  A61F9/00825 ,  A61F2009/00863 ,  A61F2009/00872 ,  H01S5/005 ,  H01S5/2218 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4062 ,  H01S5/4068

摘要： A semiconductor laser array apparatus including: a substrate; a plurality of current blocking elements that are stripe shaped and are formed on the substrate; and a plurality of light waveguides that are formed between the plurality of current blocking elements, where at least two adjacent light waveguides are optically connected by removing a part of each current blocking element therebetween.

摘要翻译： 一种半导体激光阵列装置，包括：基板; 多个电流阻挡元件，其是条形形状并形成在所述基板上; 以及多个光波导，其形成在所述多个电流阻挡元件之间，其中至少两个相邻的光波导通过去除其间的每个电流阻挡元件的一部分来光学连接。

公开(公告)号：US06556606B2

公开(公告)日：2003-04-29

申请号：US09824470

申请日：2001-04-02

申请人： Toru Takayama ,  Masaaki Yuri ,  Seiichiro Tamai ,  Kunio Ito ,  Masaru Kazumura

发明人： Toru Takayama ,  Masaaki Yuri ,  Seiichiro Tamai ,  Kunio Ito ,  Masaru Kazumura

IPC分类号： H01S319

CPC分类号： H01S5/4068 ,  A61B18/20 ,  A61F9/008 ,  A61F9/00802 ,  A61F9/00825 ,  A61F2009/00863 ,  A61F2009/00872 ,  H01S5/005 ,  H01S5/2218 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4062

摘要： A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.

摘要翻译： 一种半导体激光阵列装置，包括：第一激光阵列结构，其包括以间隔并排布置的多个第一激光振荡单元和填充每对相邻激光振荡单元之间的空间的第一电流阻挡材料， 第二激光阵列结构，其包括以间隔并排布置的多个第二激光器阵列结构，以及填充每对相邻的第二激光振荡单元之间的空间的第二电流阻挡材料。 这里，来自激活的第一和第二激光器阵列结构的激光束分别泄漏到那些激光阵列结构的外部，以分别形成激光束的第一和第二分布区域，并且第一和第二激光器阵列结构彼此靠近 使得第一和第二分配区域彼此接触或重叠。

公开(公告)号：US07411232B2

公开(公告)日：2008-08-12

申请号：US11180581

申请日：2005-07-14

申请人： Tetsuzo Ueda ,  Seiichiro Tamai

发明人： Tetsuzo Ueda ,  Seiichiro Tamai

IPC分类号： H01L31/113

CPC分类号： H01L31/101 ,  H01L27/14625 ,  H01L27/14647 ,  H01L31/02165 ,  H01L31/02327

摘要： A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an epitaxial layer formed on the semiconductor substrate by epitaxial growth. The epitaxial layer has a multilayer structure including: a first pn junction layer; a first insulating layer; a second pn junction layer; a second insulating layer; and a third pn junction layer. The first insulating layer and the second insulating layer have openings, and the first pn junction layer and the second pn junction layer are adjacent to each other through the openings of the first insulating layer which is placed in between these pn junction layers, and the second pn junction layer and the third pn junction layer are adjacent to each other through the openings of the second insulating layer which is placed in between these pn junction layers. Each of the insulating layers has a periodic structure of refractive indices in the stacking direction as well as a periodic structure of similar-shaped openings which are concentric in the in-plane direction, and therefore has filtering and light condensing functions for the pn junction layer which is formed beneath the insulating layer.

摘要翻译： 提供了一种半导体光电检测装置，用于使固态图像传感器能够满足更高质量成像的要求，并且降低成本。 本发明的受光器件包括：半导体衬底; 以及通过外延生长在半导体衬底上形成的外延层。 外延层具有多层结构，其包括：第一pn结层; 第一绝缘层; 第二pn结层; 第二绝缘层; 和第三个pn结层。 第一绝缘层和第二绝缘层具有开口，并且第一pn结层和第二pn结层通过放置在这些pn结层之间的第一绝缘层的开口彼此相邻，并且第二绝缘层 pn结层和第三pn结层通过放置在这些pn结层之间的第二绝缘层的开口彼此相邻。 绝缘层中的每一层具有层叠方向的折射率的周期性结构以及在面内方向上同心的类似形状的开口的周期性结构，因此具有用于pn结层的滤波和聚光功能 其形成在绝缘层下方。