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公开(公告)号：US20050285093A1
公开(公告)日：2005-12-29
申请号：US10530271
申请日：2003-09-18
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/00 , H01L43/08
CPC分类号： H01L27/222
摘要： It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data. In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
摘要翻译： 提供互补式磁存储装置的任务是通过精确地执行写入存储数据来提高可靠性。 因此，在本发明中，在第一铁磁隧道结元件和第二铁磁隧道结元件中分别存储相互相反的存储数据的互补型磁存储器件中，第一铁磁隧道结元件和第二铁磁 隧道结元件相邻地形成在半导体衬底上，第一写入线如线圈缠绕在第一铁磁隧道结元件周围，同时第二写入线缠绕在第二铁磁隧道结元件上，如线圈，另外， 第一写入线的卷绕方向和第二写入线的卷绕方向相反。
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2.发明授权Composite storage circuit and semiconductor device having the same composite storage circuit 失效具有相同复合存储电路的复合存储电路和半导体器件公开(公告)号：US07130224B2
公开(公告)日：2006-10-31
申请号：US10522316
申请日：2003-07-22
IPC分类号： G11C7/06
CPC分类号： G11C14/0081 , G11C11/005 , G11C11/14
摘要： An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by storing information equal to storage information stored in the volatile storage circuit into the nonvolatile storage circuit, the compound storage circuit being capable of reducing power consumption, and a semiconductor device including the compound storage circuit.According to the present invention, in a compound storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and a semiconductor device including the compound storage circuit, a determination circuit for comparing first storage information stored in the volatile storage circuit with second storage information that has already been stored in the nonvolatile storage circuit when storage information stored in the volatile storage circuit is written into the nonvolatile storage circuit is provided, and the first storage information is written into the nonvolatile storage circuit only when the first storage information is not equal to the second storage information.
摘要翻译： 本发明的目的是提供一种复合存储电路，它包括一个存储电路，该存储电路包括一个彼此并联连接的易失性存储电路和一个非易失性存储电路，它被设置为能够通过存储信息 等于存储在易失性存储电路中的存储信息到非易失性存储电路中，复合存储电路能够降低功耗，以及包括复合存储电路的半导体器件。 根据本发明，在包括彼此并联连接的易失性存储电路和非易失性存储电路的复合存储电路和包括复合存储电路的半导体器件中，确定电路用于比较存储在易失性存储器 提供了当存储在易失性存储电路中的存储信息被写入非易失性存储电路时已经存储在非易失性存储电路中的具有第二存储信息的电路，并且仅当第一存储信息被写入非易失性存储电路时， 存储信息不等于第二存储信息。
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公开(公告)号：US07020010B2
公开(公告)日：2006-03-28
申请号：US10503658
申请日：2003-02-07
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, wiring word lines in the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, and wiring bit lines in the direction orthogonal to the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, wherein two different memory states can be written in the ferromagnetic tunnel junction device by inverting the direction of the current flowing through the bit lines. At the time of writing in the ferromagnetic tunnel junction device, the direction of the current flowing through the word line is inverted in the same direction as or the opposite direction to the magnetization direction of the fixed magnetization layer.
摘要翻译： 使用铁磁隧道结装置提供的磁存储装置通过分别在隧道势垒层的顶表面和背表面上层叠固定磁化层和自由磁化层来形成铁磁隧道结装置，分别在磁化方向上布线字线 的铁磁隧道结装置的固定磁化层，以及在与铁磁隧道结装置的固定磁化层的磁化方向正交的方向上的布线位线，其中可以将两个不同的存储器状态写入铁磁隧道结装置 通过反转流过位线的电流的方向。 在铁磁隧道结装置中写入时，流过字线的电流的方向与固定磁化层的磁化方向相同或相反的方向反转。
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4.发明申请Composite storage circuit and semiconductor device having the same composite storage circuit 失效具有相同复合存储电路的复合存储电路和半导体器件公开(公告)号：US20050226033A1
公开(公告)日：2005-10-13
申请号：US10522316
申请日：2003-07-22
CPC分类号： G11C14/0081 , G11C11/005 , G11C11/14
摘要： An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by storing information equal to storage information stored in the volatile storage circuit into the nonvolatile storage circuit, the compound storage circuit being capable of reducing power consumption, and a semiconductor device including the compound storage circuit. According to the present invention, in a compound storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and a semiconductor device including the compound storage circuit, a determination circuit for comparing first storage information stored in the volatile storage circuit with second storage information that has already been stored in the nonvolatile storage circuit when storage information stored in the volatile storage circuit is written into the nonvolatile storage circuit is provided, and the first storage information is written into the nonvolatile storage circuit only when the first storage information is not equal to the second storage information.
摘要翻译： 本发明的目的是提供一种复合存储电路，它包括一个存储电路，该存储电路包括一个彼此并联连接的易失性存储电路和一个非易失性存储电路，它被设置为能够通过存储信息 等于存储在易失性存储电路中的存储信息到非易失性存储电路中，复合存储电路能够降低功耗，以及包括复合存储电路的半导体器件。 根据本发明，在包括彼此并联连接的易失性存储电路和非易失性存储电路的复合存储电路和包括复合存储电路的半导体器件中，确定电路用于比较存储在易失性存储器 提供了当存储在易失性存储电路中的存储信息被写入非易失性存储电路时已经存储在非易失性存储电路中的具有第二存储信息的电路，并且仅当第一存储信息被写入非易失性存储电路时， 存储信息不等于第二存储信息。
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公开(公告)号：US07542335B2
公开(公告)日：2009-06-02
申请号：US10530271
申请日：2003-09-18
IPC分类号： G11C11/14
CPC分类号： H01L27/222
摘要： It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data.In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
摘要翻译： 提供互补式磁存储装置的任务是通过精确地执行写入存储数据来提高可靠性。 因此，在本发明中，在第一铁磁隧道结元件和第二铁磁隧道结元件中分别存储相互相反的存储数据的互补型磁存储器件中，第一铁磁隧道结元件和第二铁磁 隧道结元件相邻地形成在半导体衬底上，第一写入线如线圈缠绕在第一铁磁隧道结元件周围，同时第二写入线缠绕在第二铁磁隧道结元件上，如线圈，另外， 第一写入线的卷绕方向和第二写入线的卷绕方向相反。
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公开(公告)号：US20050105347A1
公开(公告)日：2005-05-19
申请号：US10503658
申请日：2003-02-07
IPC分类号： G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C29/00
CPC分类号： G11C11/16
摘要： A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, wiring word lines in the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, and wiring bit lines in the direction orthogonal to the magnetization direction of the fixed magnetization layer of the ferromagnetic tunnel junction device, wherein two different memory states can be written in the ferromagnetic tunnel junction device by inverting the direction of the current flowing through the bit lines. At the time of writing in the ferromagnetic tunnel junction device, the direction of the current flowing through the word line is inverted in the same direction as or the opposite direction to the magnetization direction of the fixed magnetization layer.
摘要翻译： 使用铁磁隧道结装置提供的磁存储装置通过分别在隧道势垒层的顶表面和背表面上层叠固定磁化层和自由磁化层来形成铁磁隧道结装置，分别在磁化方向上布线字线 的铁磁隧道结装置的固定磁化层，以及在与铁磁隧道结装置的固定磁化层的磁化方向正交的方向上的布线位线，其中可以将两个不同的存储器状态写入铁磁隧道结装置 通过反转流过位线的电流的方向。 在铁磁隧道结装置中写入时，流过字线的电流的方向与固定磁化层的磁化方向相同或相反的方向反转。
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公开(公告)号：US07385845B2
公开(公告)日：2008-06-10
申请号：US10503442
申请日：2003-02-07
IPC分类号： G11C16/04
CPC分类号： G11C11/005 , G11C14/00
摘要： The object of the present invention is to provide a composite storage circuit capable of executing a writing operation and reading operation at high speed, and as the result of that, a semiconductor apparatus capable of realizing an instant-on function and an instant-off function is provided. The composite storage circuit is constituted of a volatile storage circuit and a non-volatile storage circuit connected in parallel, and the same information as storage information in the volatile storage circuit is stored in the non-volatile storage circuit. Moreover, as a power supply to the volatile storage circuit decreases, storage information in the volatile storage circuit is written in the non-volatile storage circuit. Further, after a power failure or a decreased power supply, storage information from the non-volatile storage circuit is returned to the volatile storage circuit upon restarting power feeding. Further, a semiconductor apparatus is constituted by having the composite storage circuit described above.
摘要翻译： 本发明的目的是提供一种能够高速执行写入操作和读取操作的复合存储电路，其结果是能够实现瞬时启动功能和瞬时功能的半导体装置 被提供。 复合存储电路由并联连接的易失性存储电路和非易失性存储电路构成，并且与易失性存储电路中的存储信息相同的信息存储在非易失性存储电路中。 此外，随着向易失性存储电路的电源减少，易失性存储电路中的存储信息被写入非易失性存储电路中。 此外，在电源故障或电力供应减少之后，在重新启动供电时，来自非易失性存储电路的存储信息返回到易失性存储电路。 此外，通过具有上述复合存储电路构成半导体装置。
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公开(公告)号：US20050157538A1
公开(公告)日：2005-07-21
申请号：US10508259
申请日：2003-03-17
申请人： Katsutoshi Moriyama , Hironobu Mori
发明人： Katsutoshi Moriyama , Hironobu Mori
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
摘要： An object is to provide a magnetic storage apparatus capable of performing storage data to a ferromagnetic tunnel junction device surely and with a low electric consumption. In the present invention, a magnetic storage apparatus using a ferromagnetic tunnel junction device configured so as to perform writing of storage data into the ferromagnetic tunnel junction device by applying writing magnetic force on the ferromagnetic tunnel junction device and to perform reading of storage data written in the ferromagnetic tunnel junction device by detecting a resistance value of the ferromagnetic tunnel junction device is provided, wherein it is configured to be able to change the magnitude of the writing magnetic force.
摘要翻译： 本发明的目的是提供一种磁性存储装置，其能够可靠地以低的电力消耗向铁磁隧道结装置执行存储数据。 在本发明中，使用铁磁隧道结装置的磁存储装置，通过在铁磁隧道结装置上施加写入磁力，将存储数据写入到铁磁隧道结装置中，并执行写入的存储数据的读取， 提供了通过检测铁磁隧道结装置的电阻值的铁磁隧道结装置，其中它被配置为能够改变写入磁力的大小。
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9.发明授权Power saving data storage circuit, data writing method in the same, and data storage device 失效省电数据存储电路，数据写入方法和数据存储装置公开(公告)号：US07376801B2
公开(公告)日：2008-05-20
申请号：US10505431
申请日：2003-03-17
IPC分类号： G06F12/00
CPC分类号： G11C7/02 , G11C7/1006 , G11C7/1078 , G11C7/22 , G11C2207/2263
摘要： It is an object to provide, in a data storage circuit for storing data, a power saving data storage circuit and a data writing method in the data storage circuit, and, further, to provide a data storage device. Thus, in the present invention, reading out existing data stored in a storage element M is performed prior to performing writing of new data to the storage element M to compare the existing data and the new data. The data storage circuit is configured so that in a case where the existing data and the new data are identical with each other, writing to the storage element M is not performed, and, in a case where the existing data and the new data are not identical with each other, writing of the new data to the storage element M is performed. The data storage circuit is formed on a semiconductor substrate to have a data storage device.
摘要翻译： 本发明的目的是在数据存储电路中的用于存储数据的数据存储电路中提供省电数据存储电路和数据写入方法，并且提供数据存储装置。 因此，在本发明中，在存储元件M执行写入新数据之前，先读出存储在存储元件M中的现有数据，对现有数据和新数据进行比较。 数据存储电路被配置为使得在现有数据和新数据彼此相同的情况下，不执行对存储元件M的写入，并且在现有数据和新数据不是的情况下 彼此相同，执行将新数据写入存储元件M。 数据存储电路形成在半导体衬底上以具有数据存储装置。
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10.发明申请Data storage circuit, data write method in the data storage circuit, and data storage device 失效数据存储电路，数据存储电路中的数据写入方式以及数据存储装置公开(公告)号：US20050235118A1
公开(公告)日：2005-10-20
申请号：US10505431
申请日：2003-03-17
IPC分类号： G11C11/14 , G11C7/02 , G11C7/10 , G11C7/22 , G11C11/15 , G11C16/02 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L43/08 , G06F13/28
CPC分类号： G11C7/02 , G11C7/1006 , G11C7/1078 , G11C7/22 , G11C2207/2263
摘要： It is an object to, in a data storage circuit for storing data, provide a power saving data storage circuit and a data writing method in the data storage circuit, and further, a data storage device. Thus, in the present invention, reading out of existing data stored in a storage element M is performed prior to performing writing of new data to the storage element M to compare the existing data and the new data. The data storage circuit is configured so that in a case where the existing data and the new data are identical with each other, writing to the storage element M is not performed and, in a case where the existing data and the new data are not identical with each other, writing of the new data to the storage element M is performed. The data storage circuit is formed on a semiconductor substrate to have a data storage device.
摘要翻译： 在数据存储电路中存储数据的目的在于，在数据存储电路中提供省电数据存储电路和数据写入方法，另外，还包括数据存储装置。 因此，在本发明中，在对存储元件M进行新数据的写入之前，对存储在存储元件M中的现有数据进行读出，以比较现有数据和新数据。 数据存储电路被配置为使得在现有数据和新数据彼此相同的情况下，不执行对存储元件M的写入，并且在现有数据和新数据不相同的情况下 相互之间，执行将新数据写入存储元件M。 数据存储电路形成在半导体衬底上以具有数据存储装置。
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