公开(公告)号：US06391770B1

公开(公告)日：2002-05-21

申请号：US09876044

申请日：2001-06-08

申请人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

发明人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

IPC分类号： H01L2144

摘要： In a semiconductor device, an opening having a high aspect ratio from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

公开(公告)号：US06268619B1

公开(公告)日：2001-07-31

申请号：US09038090

申请日：1998-03-11

申请人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

发明人： Katsuya Kosaki ,  Masahiro Tamaki ,  Takao Ishida

IPC分类号： H01L2980

CPC分类号： H01L21/76898 ,  H01L21/76838 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/00

摘要： In a semiconductor device, an opening having a high aspect ratio extends from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and the bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

摘要翻译： 在半导体器件中，具有高纵横比的开口从GaAs衬底的背面延伸并且通过各向异性干蚀刻形成。 在Au膜沉积在GaAs衬底的整个背面（包括开口内部）之后，Ni合金是非电解电镀的。 Ni膜也可以沉积在开口的内壁和底部。 IC基板或FET可以仅在对应于通孔的区域具有Ni膜。 IC基板或FET的背面和封装基板的前表面通过AuSn焊料彼此接合，使Ni膜不良润湿。

公开(公告)号：US06921718B2

公开(公告)日：2005-07-26

申请号：US10408258

申请日：2003-04-08

申请人： Naoto Andoh ,  Takao Ishida ,  Kenji Hosogi

发明人： Naoto Andoh ,  Takao Ishida ,  Kenji Hosogi

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L21/76898

摘要： A semiconductor device includes a semiconductor substrate and an electrode disposed on a major surface of the semiconductor substrate. A via hole is formed on a center of the electrode so as to open from a surface of the electrode to a place under the surface of the semiconductor substrate. A via-hole foundation electrode for inhibiting diffusion from a metal layer is formed inside the via hole and on the surface of the electrode, a via-hole electrode is formed on the surface of the via-hole foundation electrode. A back via hole is formed on the back of the semiconductor substrate opposite to the major surface thereof, and opened from the back of the semiconductor substrate to the via-hole electrode. A back via-hole electrode is formed on the back of the semiconductor substrate including the inside of the back via hole.

摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底的主表面上的电极。 在电极的中心形成通孔，从电极的表面向半导体衬底的表面下方的位置开口。 在通孔内形成有用于抑制从金属层扩散的通孔基础电极，在电极表面上，在通孔基础电极的表面上形成通孔电极。 在半导体衬底的与其主表面相对的背面上形成背部通孔，并且从半导体衬底的背面开口到通孔电极。 背部通孔电极形成在包括背部通孔内侧的半导体衬底的背面上。

公开(公告)号：US5739558A

公开(公告)日：1998-04-14

申请号：US786210

申请日：1997-01-21

申请人： Takao Ishida ,  Naohito Yoshida

发明人： Takao Ishida ,  Naohito Yoshida

IPC分类号： H01L29/78 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/7785

摘要： A field effect transistor includes a semi-insulating semiconductor substrate; a buffer layer disposed on the substrate and having a high resistance; a first semiconductor layer disposed on the buffer layer and having a relatively high concentration of a dopant impurity; a second semiconductor layer disposed on the first semiconductor layer and having a relatively low concentration of a dopant impurity; a third semiconductor layer disposed on the second semiconductor layer and having a relatively high concentration of a dopant impurity; a fourth semiconductor layer disposed on the third semiconductor layer; and a gate electrode, a source electrode, and a drain electrode disposed on the fourth semiconductor layer wherein the electron affinity of the second semiconductor layer is larger than that of the first and third semiconductor layers, and the difference between the electron affinities of the first and second semiconductor layers proximate their junction is larger than the difference between the electron affinities of the second and third semiconductor layers proximate their junction. The linearity of an output signal with respect to an input signal is improved so that the field effect transistor has improved distortion characteristics and reduced noise on adjacent lines in frequency multiplexed communication.

摘要翻译： 场效应晶体管包括半绝缘半导体衬底; 缓冲层，其设置在所述基板上并具有高电阻; 设置在所述缓冲层上并且具有相对高浓度的掺杂剂杂质的第一半导体层; 第二半导体层，其设置在所述第一半导体层上并且具有相对低的掺杂剂杂质浓度; 第三半导体层，设置在所述第二半导体层上并且具有相对高的掺杂剂杂质浓度; 设置在所述第三半导体层上的第四半导体层; 以及设置在第四半导体层上的栅电极，源电极和漏极，其中第二半导体层的电子亲和力大于第一和第三半导体层的电子亲和力，并且第一和第二半导体层的电子亲和力之间的差异 并且靠近其结的第二半导体层大于靠近其结的第二和第三半导体层的电子亲和力之间的差异。 改善了输出信号相对于输入信号的线性，使得场效应晶体管具有改善的频率复用通信中相邻线路上的失真特性和降低的噪声。

公开(公告)号：US4607908A

公开(公告)日：1986-08-26

申请号：US735984

申请日：1985-05-20

申请人： Takao Ishida ,  Yoshitsugu Nakatomi

发明人： Takao Ishida ,  Yoshitsugu Nakatomi

IPC分类号： F16C32/04 ,  G02B26/10 ,  G02B26/12

CPC分类号： F16C39/063 ,  F16C17/026 ,  G02B26/121 ,  F16C2370/22

摘要： In an optical deflector of a polygonal mirror type, a rotating shaft is supported by a pair of journal bearings of a herringbone dynamic pressure type and a magnetic thrust bearing. The magnetic thrust bearing comprises first and second annular magnets. The first annular magnet is coaxially fixed to the shaft and has a first magnetic pole arrangement on its outer surface. The second annular magnet is fixed to a housing, and has its inner surface opposed to the outer surface of the first magnet and magnetized with a pole arrangement different from the pole arrangement of the first magnet, so that the first and second magnet attract one another to suspend the shaft. Ferromagnetic plates are fixed on both upper and lower surfaces of the first and second magnets.

摘要翻译： 在多面镜型的光学偏转器中，旋转轴由人字动态压力型和磁性推力轴承的一对轴颈轴承支撑。 磁力推力轴承包括第一和第二环形磁体。 第一环形磁体同轴地固定到轴上，并且在其外表面上具有第一磁极布置。 第二环形磁体被固定到壳体，并且其内表面与第一磁体的外表面相对并且用与第一磁体的磁极布置不同的磁极装置进行磁化，使得第一和第二磁体彼此吸引 悬挂轴。 铁磁板固定在第一和第二磁体的上表面和下表面上。

公开(公告)号：US07140947B2

公开(公告)日：2006-11-28

申请号：US11135601

申请日：2005-05-23

申请人： Kazutoshi Nishimura ,  Takao Ishida ,  Yoshihiro Masuda

发明人： Kazutoshi Nishimura ,  Takao Ishida ,  Yoshihiro Masuda

IPC分类号： B24B1/00 ,  B24B49/00

CPC分类号： B24B31/108

摘要： Barrel polishing is effected while causing a mass (M) consisting of work and media (polishing material) to rotation-flow by rotating a rotary disk installed in the bottom of a polishing tank by a drive motor. A load on the drive motor for the rotary disk is preset as by a load current value, and the flow of the mass (M) in the polishing tank is controlled, thereby effecting polishing while maintaining the load on the drive motor within the preset range.

摘要翻译： 通过驱动马达旋转安装在抛光槽底部的旋转盘，同时通过工作和介质（抛光材料）组成的质量（M）进行滚筒抛光。 用于旋转盘的驱动电动机上的负载是通过负载电流值预设的，并且控制抛光槽中的质量（M）的流动，从而在将驱动电动机上的负载保持在预设范围内的同时进行抛光 。

公开(公告)号：US5776251A

公开(公告)日：1998-07-07

申请号：US720599

申请日：1996-09-30

申请人： Nobuaki Irie ,  Takao Ishida ,  Akiyoshi Hashimoto ,  Yasutomi Yoshimura

发明人： Nobuaki Irie ,  Takao Ishida ,  Akiyoshi Hashimoto ,  Yasutomi Yoshimura

IPC分类号： B05B9/04 ,  B05C5/02 ,  B05C9/04 ,  B05C11/00 ,  B05C3/02

CPC分类号： B05C5/027 ,  B05B9/04 ,  B05C5/0254

摘要： In a duplex type coating apparatus, a left-right pair of dies and are disposed on opposite sides of a carrying path of a web, the dies and are each made up of an upper member and a lower member, a tip part of the lower member projects further toward the carrying path than a tip part of the upper member, and coating liquid discharge passages are inclined in the direction of the carrying path of the web. As a result, because the same amount of coating liquid is discharged from each of the dies and coated onto each side of the web, it is possible to carry out coating at the same coating thickness and in the same position on both sides of the web.

摘要翻译： 在双面涂布装置中，左右一对模具设置在幅材的承载路径的相对侧上，该模具各自由上部构件和下部构件构成，下部构件的顶端部分 构件比上部构件的顶端进一步向运送路径突出，并且涂布液体排出通道沿着幅材的传送路径的方向倾斜。 结果，由于将相同量的涂布液从每个模具中排出并涂布在幅材的每一侧上，所以可以以相同的涂层厚度和在纸幅两侧的相同位置进行涂布 。

公开(公告)号：US5679603A

公开(公告)日：1997-10-21

申请号：US386804

申请日：1995-02-06

申请人： Tatsuya Kimura ,  Takao Ishida ,  Takuji Sonoda

发明人： Tatsuya Kimura ,  Takao Ishida ,  Takuji Sonoda

IPC分类号： H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/917

摘要： A high resistance compound semiconductor layer included in a semiconductor device including a plurality of compound semiconductor layers having different compositions includes a compound semiconductor that is vapor phase grown employing an organic metal compound including In, an organic metal compound including Al, and a hydrogenated compound or an organic metal compound including As. The high resistance compound semiconductor layer includes p type impurities having a concentration that positions the Fermi level of the compound semiconductor approximately at the center of the band gap of the compound semiconductor. Therefore, it is possible to produce a high resistance AlInAs layer that has less impurities that are diffused into an adjacent compound semiconductor layer.

摘要翻译： 包括在具有不同组成的多个化合物半导体层的半导体器件中的高电阻化合物半导体层包括使用包含In的有机金属化合物，包含Al的有机金属化合物和氢化化合物进行气相生长的化合物半导体，或 包含As的有机金属化合物。 高电阻化合物半导体层包括具有将化合物半导体的费米能级大致位于化合物半导体的带隙的中心的浓度的p型杂质。 因此，可以生产具有较少杂质扩散到相邻化合物半导体层中的高电阻AlInAs层。

公开(公告)号：US4837979A

公开(公告)日：1989-06-13

申请号：US168819

申请日：1988-03-16

申请人： Takao Ishida ,  Hiroshi Hagiwara ,  Ichizo Kakumu

发明人： Takao Ishida ,  Hiroshi Hagiwara ,  Ichizo Kakumu

IPC分类号： B24B7/16

CPC分类号： B24B7/162

摘要： The upper portion of a frame of a lapping device is provided with a device for supplying a workpiece, a grindstone, and a delivering device, and a movable arm is horizontally and movably supported by a support column of the frame in such a manner that the arm moves above the supplying device, grindstone, and the delivering device. The movable arm is provided with an device for autorotating the workpiece, the autorotating device being able to move upwardly or downwardly through the pressurizing device, and the movable arm further being provided with a device for holding the workpiece beneath the autorotating device. The workpiece is transported by the holding device to a position above the grindstone, and is brought into abutment with the grindstone by a holding member which is disposed at the lower end of the autorotating device, whereby it is ground with being rotated.

公开(公告)号：US6083290A

公开(公告)日：2000-07-04

申请号：US128997

申请日：1998-08-04

申请人： Yasushi Ikeda ,  Takao Ishida

发明人： Yasushi Ikeda ,  Takao Ishida

IPC分类号： B24B31/14 ,  B24D3/04 ,  C09K3/14 ,  B24D3/00

CPC分类号： B24D3/04 ,  B24B31/14 ,  C09K3/1409

摘要： Inorganic media for barrel finishing produced by sintering a media green body formed from a mixed material comprising clay fine grains as a binder, abrasive grains and aluminum hydroxide fine grains as a brittleness imparting agent. The inorganic media is excellent in finishing performance, with which rough finishing can be conducted by dry barrel finishing.

摘要翻译： 通过烧结由包含作为粘合剂的粘土细颗粒的混合材料形成的介质生坯，作为脆性赋予剂的磨料颗粒和氢氧化铝细颗粒而生产的无机介质。 无机介质具有优异的整理性能，可通过干桶整理进行粗加工。