公开(公告)号：US20160293424A1

公开(公告)日：2016-10-06

申请号：US15143043

申请日：2016-04-29

申请人： Kazuhiko FUSE ,  Shinichi Kato ,  Kenichi Yokouchi

发明人： Kazuhiko FUSE ,  Shinichi Kato ,  Kenichi Yokouchi

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/265

CPC分类号： H01L21/2253 ,  F27B17/0025 ,  H01L21/02694 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68707 ,  H01L21/68742

摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

摘要翻译： 执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度 在1到20毫秒的范围内的时间段。 这实现了杂质的活化。 随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内 时间段在3到50毫秒的范围内。 这防止了杂质的扩散抑制了工艺引起的损伤的发生。

公开(公告)号：US20120244725A1

公开(公告)日：2012-09-27

申请号：US13417498

申请日：2012-03-12

申请人： Kazuhiko FUSE ,  Shinichi KATO ,  Kenichi YOKOUCHI

发明人： Kazuhiko FUSE ,  Shinichi KATO ,  Kenichi YOKOUCHI

IPC分类号： H01L21/263 ,  F27B9/36

CPC分类号： H01L21/2253 ,  F27B17/0025 ,  H01L21/02694 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68707 ,  H01L21/68742

摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

摘要翻译： 执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度 在1到20毫秒的范围内的时间段。 这实现了杂质的活化。 随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内 时间段在3到50毫秒的范围内。 这防止了杂质的扩散抑制了工艺引起的损伤的发生。

公开(公告)号：US20130078744A1

公开(公告)日：2013-03-28

申请号：US13609947

申请日：2012-09-11

申请人： Hiroki KIYAMA ,  Kazuhiko FUSE ,  Shinichi KATO

发明人： Hiroki KIYAMA ,  Kazuhiko FUSE ,  Shinichi KATO

IPC分类号： H01L21/30 ,  A21B1/22

CPC分类号： H01L21/2686 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/67109 ,  H01L21/67115

摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.

摘要翻译： 在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。 绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间 为0.01毫秒以上且1毫秒以下。 由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

公开(公告)号：US20130078786A1

公开(公告)日：2013-03-28

申请号：US13607892

申请日：2012-09-10

申请人： Kazuhiko FUSE ,  Shinichi KATO

发明人： Kazuhiko FUSE ,  Shinichi KATO

IPC分类号： H01L21/3105 ,  H01L21/20

CPC分类号： H01L21/02356 ,  H01L21/2686 ,  H01L21/28176 ,  H01L21/67115 ,  H01L21/68707 ,  H01L21/68735 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7848

摘要： A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.

摘要翻译： 在硅 - 锗层上形成二氧化硅膜，并且在二氧化硅膜上进一步形成高介电常数膜。 在半导体晶片上进行来自闪光灯的第一次照射，将半导体晶片的正面的温度从预热温度升温至目标温度，时间范围为3毫秒〜1秒。 随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内，持续3毫秒至1秒的时间段。 这促进了高介电常数膜的结晶，同时抑制了硅 - 锗层中的变形的减轻。

公开(公告)号：US20130078802A1

公开(公告)日：2013-03-28

申请号：US13606281

申请日：2012-09-07

申请人： Kazuhiko FUSE ,  Shinichi KATO

发明人： Kazuhiko FUSE ,  Shinichi KATO

IPC分类号： H01L21/768

CPC分类号： H01L21/28518 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742

摘要： Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.

摘要翻译： 将硅的离子注入到半导体晶片中的源极/漏极区域中以使半导体晶片中的离子注入区域非晶化。 镍膜沉积在非晶化离子注入区上。 在其上沉积有镍膜的半导体晶片上进行来自闪光灯的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度，持续1至20毫秒的范围 。 随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内在1至100毫秒范围内的时间段内。 这使得硅化镍在垂直于半导体晶片的方向上优先生长。