公开(公告)号：US20160293424A1

公开(公告)日：2016-10-06

申请号：US15143043

申请日：2016-04-29

申请人： Kazuhiko FUSE ,  Shinichi Kato ,  Kenichi Yokouchi

发明人： Kazuhiko FUSE ,  Shinichi Kato ,  Kenichi Yokouchi

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/265

CPC分类号： H01L21/2253 ,  F27B17/0025 ,  H01L21/02694 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68707 ,  H01L21/68742

摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

摘要翻译： 执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度 在1到20毫秒的范围内的时间段。 这实现了杂质的活化。 随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内 时间段在3到50毫秒的范围内。 这防止了杂质的扩散抑制了工艺引起的损伤的发生。

公开(公告)号：US09343313B2

公开(公告)日：2016-05-17

申请号：US13417498

申请日：2012-03-12

申请人： Kazuhiko Fuse ,  Shinichi Kato ,  Kenichi Yokouchi

发明人： Kazuhiko Fuse ,  Shinichi Kato ,  Kenichi Yokouchi

IPC分类号： H01L21/263 ,  H01L21/324 ,  H01L21/268 ,  H01L21/67 ,  H01L21/687 ,  F27B17/00 ,  H01L21/265

CPC分类号： H01L21/2253 ,  F27B17/0025 ,  H01L21/02694 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68707 ,  H01L21/68742

摘要： First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

摘要翻译： 执行使闪光灯的发射输出在1至20毫秒的范围内达到其最大值的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度 在1到20毫秒的范围内的时间段。 这实现了杂质的活化。 随后，进行从3-50毫秒的范围内的最大值的最大值逐渐降低的第二次照射，将前表面的温度保持在目标温度±25℃左右的范围内 时间段在3到50毫秒的范围内。 这防止了杂质的扩散抑制了工艺引起的损伤的发生。

公开(公告)号：US08664116B2

公开(公告)日：2014-03-04

申请号：US13606281

申请日：2012-09-07

申请人： Kazuhiko Fuse ,  Shinichi Kato

发明人： Kazuhiko Fuse ,  Shinichi Kato

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742

摘要： Ions of silicon are implanted into source/drain regions in a semiconductor wafer to amorphize an ion implantation region in the semiconductor wafer. A nickel film is deposited on the amorphized ion implantation region. First irradiation from a flash lamp is performed on the semiconductor wafer with the nickel film deposited thereon to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 1 to 100 milliseconds. This causes nickel silicide to grow preferentially in a direction perpendicular to the semiconductor wafer.

摘要翻译： 将硅的离子注入到半导体晶片中的源极/漏极区域中以使半导体晶片中的离子注入区域非晶化。 镍膜沉积在非晶化离子注入区上。 在其上沉积有镍膜的半导体晶片上进行来自闪光灯的第一次照射，以将半导体晶片的前表面的温度从预热温度升高到目标温度，持续1至20毫秒的范围 。 随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内在1至100毫秒范围内的时间段内。 这使得硅化镍在垂直于半导体晶片的方向上优先生长。

公开(公告)号：US08852966B2

公开(公告)日：2014-10-07

申请号：US13609947

申请日：2012-09-11

申请人： Hiroki Kiyama ,  Kazuhiko Fuse ,  Shinichi Kato

发明人： Hiroki Kiyama ,  Kazuhiko Fuse ,  Shinichi Kato

IPC分类号： H01L21/26 ,  H01L21/02 ,  H01L21/268 ,  H01L21/67

CPC分类号： H01L21/2686 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/67109 ,  H01L21/67115

摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.

摘要翻译： 在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。 绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间 为0.01毫秒以上且1毫秒以下。 由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

公开(公告)号：US08623750B2

公开(公告)日：2014-01-07

申请号：US13607892

申请日：2012-09-10

申请人： Kazuhiko Fuse ,  Shinichi Kato

发明人： Kazuhiko Fuse ,  Shinichi Kato

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02356 ,  H01L21/2686 ,  H01L21/28176 ,  H01L21/67115 ,  H01L21/68707 ,  H01L21/68735 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7848

摘要： A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.

摘要翻译： 在硅 - 锗层上形成二氧化硅膜，并且在二氧化硅膜上进一步形成高介电常数膜。 在半导体晶片上进行来自闪光灯的第一次照射，将半导体晶片的正面的温度从预热温度升温至目标温度，时间范围为3毫秒〜1秒。 随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内，持续3毫秒至1秒的时间段。 这促进了高介电常数膜的结晶，同时抑制了硅 - 锗层中的变形的减轻。

公开(公告)号：US09434005B2

公开(公告)日：2016-09-06

申请号：US13493617

申请日：2012-06-11

申请人： Hiromi Yokota ,  Ryo Mukai ,  Shinichi Kato ,  Nahomi Hamaguchi

发明人： Hiromi Yokota ,  Ryo Mukai ,  Shinichi Kato ,  Nahomi Hamaguchi

IPC分类号： B22F7/08 ,  C22C1/04 ,  C22C9/00 ,  C22C9/02 ,  F16C33/12 ,  C22C9/04 ,  C22C9/08

CPC分类号： B22F7/08 ,  B22F2998/00 ,  C22C1/0425 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/08 ,  F16C33/121 ,  F16C2204/12 ,  Y02T10/865 ,  B22F3/10

摘要： A method of producing a Pb-free copper-alloy sliding material containing 1.0 to 15.0% of Sn, 0.5 to 15.0% of Bi and 0.05 to 5.0% of Ag, and Ag and Bi from an Ag—Bi eutectic. If necessary, at least one of 0.1 to 5.0% of Ni, 0.02 to 0.2% P, 0.5 to 30.0% of Zn, and 1.0 to 10.0 mass % of at least one of a group consisting of Fe3P, Fe2P, FeB, NiB and AlN may be added.

摘要翻译： 制备含有Sn：1.0〜15.0％，Bi：0.5〜15.0％，Ag：0.05〜5.0％，Ag-Bi共晶的Ag，Bi的无铅铜合金滑动材料的制造方法。 如果需要，可以使用0.1〜5.0％的Ni，0.02〜0.2％的P，0.5〜30.0％的Zn和1.0〜10.0质量％的Fe 3 P，Fe 2 P，FeB，NiB和 可以添加AlN。

公开(公告)号：US08963050B2

公开(公告)日：2015-02-24

申请号：US13272657

申请日：2011-10-13

申请人： Shinichi Kato ,  Hiroki Kiyama

发明人： Shinichi Kato ,  Hiroki Kiyama

IPC分类号： F27D11/00 ,  H05B7/18 ,  H05B3/68 ,  F26B3/30 ,  F27B17/00 ,  F27D7/02 ,  H01L21/67

CPC分类号： F27B17/0025 ,  F27D7/02 ,  H01L21/67109 ,  H01L21/67115

摘要： A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.

摘要翻译： 将其上形成有薄膜的表面的半导体晶片输送到室中并由保持器保持。 在更换室内提供的气氛之后，将闪光灯从光照射部分中的闪光灯朝向半导体晶片引导，以对薄膜进行烘烤处理。 用光照射部分的卤素灯的光照射半导体晶片也是在与闪光的照射的同时开始的。 在非常短的时间内发射的光并且具有高强度的闪光使得薄膜的表面温度瞬间上升。 这防止了由于膜中长时间烘烤而导致的异常晶粒生长的发生。

公开(公告)号：US20120225968A1

公开(公告)日：2012-09-06

申请号：US13337581

申请日：2011-12-27

申请人： Tomohito Nakano ,  Toshiyuki Miyabayashi ,  Shinichi Kato ,  Hiroki Nakane ,  Hirotoshi Koyano ,  Yoshinobu Sato ,  Hiroshi Sawada ,  Kenji Kitada

发明人： Tomohito Nakano ,  Toshiyuki Miyabayashi ,  Shinichi Kato ,  Hiroki Nakane ,  Hirotoshi Koyano ,  Yoshinobu Sato ,  Hiroshi Sawada ,  Kenji Kitada

IPC分类号： C09D11/10

CPC分类号： C08F299/06 ,  C08F290/067 ,  C09D11/101

摘要： An ink composition for ink jet providing excellent in the curability based on ultraviolet irradiation in the presence of water or a solvent, the ejection stability with respect to the factors such as dot loss or flight deflection, and the storage stability of ink. Also provided herein is an ink composition for ink jet including: a pigment; a water-soluble organic solvent; a surfactant; at least either of a urethane (meth)acrylate being represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 10,000 and a cross-linked urethane (meth)acrylate having a constitutional unit including the urethane (meth)acrylate; a compound having a radical polymerizable group(s); a photoradical polymerization initiator; and water: A1-O—(CONH—B1—NHCOO—C1—O)n—CONH—B1—NH—COO-D1  (1) where each of A1, B1, C1, D1, and n in formula (1) are described herein.

摘要翻译： 一种用于喷墨的油墨组合物，其在水或溶剂的存在下，基于紫外线照射提供优异的固化性，相对于诸如点损失或飞行偏转等因素的喷射稳定性以及油墨的储存稳定性。 本文还提供了一种用于喷墨的油墨组合物，包括：颜料; 水溶性有机溶剂; 表面活性剂; 氨基甲酸酯（甲基）丙烯酸酯中的至少一种由以下通式（1）表示并具有1,000至10,000的重均分子量和具有包含氨基甲酸酯（甲基）丙烯酸酯的结构单元的交联的聚氨酯（甲基）丙烯酸酯 ）丙烯酸酯; 具有自由基聚合性基团的化合物; 光自由基聚合引发剂; 和水：式（1）中的A1，B1，C1，D1和n各自的A1-O-（CONH-B1-NHCOO-C1-O）n-CONH-B1-NH-COO-D1（1） 在此描述。

公开(公告)号：US08129284B2

公开(公告)日：2012-03-06

申请号：US12732591

申请日：2010-03-26

申请人： Shinichi Kato

发明人： Shinichi Kato

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： F27B17/0025 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

摘要： A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

摘要翻译： 在其上注入有杂质的硅衬底的表面上形成碳薄膜的半导体晶片被从闪光灯发射的闪光照射。 吸收闪光灯会导致碳薄膜的温度升高。 因此，注入杂质的硅衬底的表面温度增加到高于不形成薄膜的情况下的表面温度，并且可以降低薄层电阻值。 当在其上形成有碳薄膜的半导体晶片用高浓度氧气氛中的闪光照射时，由于薄膜的碳被氧化以汽化，所以与闪光加热同时进行薄膜的去除。

公开(公告)号：US20110176819A1

公开(公告)日：2011-07-21

申请号：US13008490

申请日：2011-01-18

申请人： Yasutomo IDE ,  Masanobu Yamagata ,  Shinichi Kato ,  Yasuhiro Kuba ,  Tsuyoshi Hashiyada

发明人： Yasutomo IDE ,  Masanobu Yamagata ,  Shinichi Kato ,  Yasuhiro Kuba ,  Tsuyoshi Hashiyada

IPC分类号： G03G15/22 ,  B65H7/02 ,  G01L3/02

CPC分类号： B65H7/02 ,  B65H3/06 ,  B65H2403/42 ,  B65H2511/212 ,  B65H2553/25 ,  G03G15/6502 ,  G03G2215/00383 ,  G03G2215/00729 ,  B65H2220/03 ,  B65H2220/11

摘要： An image forming apparatus includes a sheet feeding device (1). The sheet feeding device (1) includes a sheet feeding cassette (2), a push-up member (4), a drive shaft (5), and a rotation detecting device (6). The rotation detecting device (6) includes an output gear connected to the drive shaft (5). The output gear includes a gear main body provided with a gear tooth on its outer edge; and an electrode holding member that is attached to the gear main body. The electrode holding member is rotatably provided in the case (9) and a rotating electrode is attached to the electrode holding member. The electrode holding member is formed of at least one thermoplastic resin selected from the group consisting of POM, PA, PBT, PP, PE, ABS resin, PS, PPE, PC, and PMMA. The gear main body is formed of a material whose strength is higher than thermoplastic resin of which the electrode holding member is formed.

摘要翻译： 图像形成装置包括片材进给装置（1）。 送纸装置（1）包括送纸盒（2），上推构件（4），驱动轴（5）和旋转检测装置（6）。 旋转检测装置（6）包括连接到驱动轴（5）的输出齿轮。 输出齿轮包括在其外缘上设有齿轮齿的齿轮主体; 以及安装在齿轮主体上的电极保持部件。 电极保持构件可旋转地设置在壳体（9）中，并且旋转电极附接到电极保持构件。 电极保持构件由选自POM，PA，PBT，PP，PE，ABS树脂，PS，PPE，PC和PMMA中的至少一种热塑性树脂形成。 齿轮主体由强度比形成有电极保持部件的热塑性树脂高的材料形成。