摘要:
A composite filter chip includes a stacked chip made by stacking a first chip and a second chip. The first chip has a first filter circuit formed on the main surface thereof. The second chip has a second filter circuit formed on the main surface thereof.
摘要:
A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.
摘要:
A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.
摘要:
A film bulk acoustic resonator includes a substrate; an acoustic reflector portion formed on the substrate; and an acoustic resonator portion including a lower electrode, a piezoelectric film, and an upper electrode which are sequentially stacked on the acoustic reflector portion, An uppermost layer of the acoustic reflector portion which is in contact with the acoustic resonator portion has a root-mean-square roughness of approximately 1 nm or less.
摘要:
A bulk acoustic resonator has an acoustic reflector portion formed on a substrate and including one or more low acoustic impedance layers and one or more high acoustic impedance layers having a higher acoustic impedance than the low acoustic impedance layer which are disposed in stacked relation and an acoustic resonator portion formed on the acoustic reflector portion and having a piezoelectric film. At least one of the low acoustic impedance layers is made of silicon.
摘要:
A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed.
摘要:
An optical transmission module that can be produced more easily and uses a shorter wiring pattern connecting the driving device and the light-emitting device than the conventional light-emitting apparatus, with the driving device and the light-emitting device arranged close to each other. The light-emitting device and the light-receiving device for monitoring the backward light emitted from the light-emitting device are arranged on a main surface of the substrate. The driving device is disposed on a bottom of a concave formed between the light-emitting device and the light-receiving device so that the driving device is lower than a straight line connecting a backward light emitting point of the light-emitting device and a backward light receiving point of the light-receiving device.
摘要:
An optical transmission module that can be produced more easily and uses a shorter wiring pattern connecting the driving device and the light-emitting device than the conventional light-emitting apparatus, with the driving device and the light-emitting device arranged close to each other. The light-emitting device and the light-receiving device for monitoring the backward light emitted from the light-emitting device are arranged on a main surface of the substrate. The driving device is disposed on a bottom of a concave formed between the light-emitting device and the light-receiving device so that the driving device is lower than a straight line connecting a backward light emitting point of the light-emitting device and a backward light receiving point of the light-receiving device.
摘要:
An image processing apparatus and a method thereof for correcting image data in accordance with a feature of the image data, calculates a brightness component of image data and a color difference component of image data, determines whether the image data is a nightscape image or an underexposed image using the calculated brightness component and color difference component, and corrects the image data which has been determined as a nightscape image or an underexposed image.
摘要:
A semiconductor integrated circuit device with a balun which is formed above a conductive semiconductor substrate and which includes a dielectric film, an unbalanced line for transmitting an unbalanced signal, and balanced lines for transmitting a balanced signal. The unbalanced line is placed opposite to the balanced lines via a nano-composite film that is a region of the dielectric film. The nano-composite film, interposed between the unbalanced line and the balanced lines, has a relative permittivity higher than that of other regions of the dielectric film. This allows suppression of electromagnetic coupling of transmission lines or passive elements other than the balun, thereby providing a semiconductor device with a wide-band and small-size balun.