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公开(公告)号：US07804176B2
公开(公告)日：2010-09-28
申请号：US11626286
申请日：2007-01-23
CPC分类号： H01L25/18 , G11C5/06 , H01L24/45 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2225/06586 , H01L2924/01014 , H01L2924/01037 , H01L2924/01079 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： This invention is to provide a nonvolatile memory device that enhances a size reduction and mass productivity while ensuring reliability and signal transmission performance. A nonvolatile memory chip having a first side formed with no pads and a second side formed with pads is mounted on a mounting substrate. A control chip for controlling the nonvolatile memory chip is mounted on the nonvolatile memory chip. The control chip has a first pad row corresponding to the pads of the nonvolatile memory chip. The first pad row is mounted adjacent to the first side of the nonvolatile memory chip. The first pad row of the control chip and a first electrode row formed on the mounting substrate are connected via a first wire group. The pads of the nonvolatile memory chip and a second electrode row formed on the mounting substrate are connected via a second wire group. The first electrode row and the second electrode row are connected through wirings formed in the mounting substrate.
摘要翻译： 本发明是提供一种在确保可靠性和信号传输性能的同时提高尺寸减小和批量生产率的非易失性存储装置。 具有形成有焊盘的第一侧和形成有焊盘的第二侧的非易失性存储器芯片安装在安装基板上。 用于控制非易失存储器芯片的控制芯片安装在非易失性存储器芯片上。 控制芯片具有对应于非易失性存储器芯片的焊盘的第一焊盘行。 第一焊盘排安装在非易失性存储芯片的第一侧附近。 控制芯片的第一焊盘排和形成在安装基板上的第一电极列经由第一焊丝组连接。 形成在安装基板上的非易失性存储芯片的焊盘和第二电极列经由第二引线组连接。 第一电极列和第二电极列通过形成在安装基板中的布线连接。
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公开(公告)号：US20120280379A1
公开(公告)日：2012-11-08
申请号：US13464257
申请日：2012-05-04
申请人： JUNICHI ARITA , Kazuko Hanawa , Makoto Nishimura
发明人： JUNICHI ARITA , Kazuko Hanawa , Makoto Nishimura
IPC分类号： H01L23/495
CPC分类号： H01L23/49503 , H01L23/3107 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/05554 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32014 , H01L2224/32055 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48108 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/05599
摘要： A semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and leads so as to surround the die pad, members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate. A semiconductor chip larger than the die pad is mounted over the die pad and the members. Top surfaces of the die pad and the members in opposition to the back surface of the chip are bonded to the back surface of the chip with silver paste. Heat is conducted from the back surface of the chip to the heat dissipating plate via the silver paste, the die pad, and the members, and dissipated to the outside of the semiconductor device via the leads.
摘要翻译： 半导体器件具有管芯焊盘，布置在管芯焊盘和引线之间的框架形式的散热板，以围绕管芯焊盘，连接管芯焊盘和散热板的内边缘的部件，以及 连接到散热板的外延伸部的悬挂引线。 大于管芯焊盘的半导体芯片安装在管芯焊盘和部件上。 芯片的顶表面和与芯片的背面相对的构件的顶面用银浆粘合到芯片的背面。 通过银膏，芯片焊盘和部件从芯片的背面向散热板传导热量，并通过引线消散到半导体器件的外部。
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公开(公告)号：US20100244214A1
公开(公告)日：2010-09-30
申请号：US12731201
申请日：2010-03-25
申请人： Junichi ARITA , Kazuko Hanawa , Makoto Nishimura
发明人： Junichi ARITA , Kazuko Hanawa , Makoto Nishimura
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L23/49503 , H01L23/3107 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/05554 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32014 , H01L2224/32055 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48108 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/05599
摘要： To improve the heat dissipation characteristics of a semiconductor device.The semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and a plurality of leads so as to surround the die pad, a plurality of members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate, wherein a semiconductor chip the outer shape of which is larger than the die pad is mounted over the die pad and the members. The top surface of the die pad and the top surface of the members at the part in opposition to the back surface of the semiconductor chip are bonded to the back surface of the semiconductor chip in their entire surfaces with a silver paste. Heat in the semiconductor chip is conducted from the back surface of the semiconductor chip to the heat dissipating plate via the silver paste, the die pad, and the member, and dissipated to the outside of the semiconductor device therefrom via the lead.
摘要翻译： 提高半导体器件的散热特性。 半导体器件具有管芯焊盘，散热板，其形式为布置在管芯焊盘和多个引线之间的框架形式，以围绕管芯焊盘;多个构件，其将管芯焊盘和内部边缘连接 散热板和连接到散热板的外部延伸部的悬挂引线，其中外部形状大于管芯焊盘的半导体芯片安装在管芯焊盘和部件上。 芯片焊盘的顶表面和与半导体芯片的背面相对的部分的部件的顶表面在银浆的整个表面上与半导体芯片的背面接合。 半导体芯片中的热量通过银膏，芯片焊盘和部件从半导体芯片的背面传导到散热板，并通过引线从其散发到半导体器件的外部。
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公开(公告)号：US08492882B2
公开(公告)日：2013-07-23
申请号：US13464257
申请日：2012-05-04
申请人： Junichi Arita , Kazuko Hanawa , Makoto Nishimura
发明人： Junichi Arita , Kazuko Hanawa , Makoto Nishimura
IPC分类号： H01L23/495
CPC分类号： H01L23/49503 , H01L23/3107 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/05554 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32014 , H01L2224/32055 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48108 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/05599
摘要： A semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and leads so as to surround the die pad, members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate. A semiconductor chip larger than the die pad is mounted over the die pad and the members. Top surfaces of the die pad and the members in opposition to the back surface of the chip are bonded to the back surface of the chip with silver paste. Heat is conducted from the back surface of the chip to the heat dissipating plate via the silver paste, the die pad, and the members, and dissipated to the outside of the semiconductor device via the leads.
摘要翻译： 半导体器件具有管芯焊盘，布置在管芯焊盘和引线之间的框架形式的散热板，以围绕管芯焊盘，连接管芯焊盘和散热板的内边缘的部件，以及 连接到散热板的外延伸部的悬挂引线。 大于管芯焊盘的半导体芯片安装在管芯焊盘和部件上。 芯片的顶表面和与芯片的背面相对的构件的顶面用银浆粘合到芯片的背面。 通过银膏，芯片焊盘和部件从芯片的背面向散热板传导热量，并通过引线消散到半导体器件的外部。
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公开(公告)号：US08188583B2
公开(公告)日：2012-05-29
申请号：US12731201
申请日：2010-03-25
申请人： Junichi Arita , Kazuko Hanawa , Makoto Nishimura
发明人： Junichi Arita , Kazuko Hanawa , Makoto Nishimura
IPC分类号： H01L23/495
CPC分类号： H01L23/49503 , H01L23/3107 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/83 , H01L2224/05554 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32014 , H01L2224/32055 , H01L2224/32057 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48108 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01052 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/05599
摘要： To improve the heat dissipation characteristics of a semiconductor device.The semiconductor device has a die pad, a heat dissipating plate in the form of a frame arranged between the die pad and a plurality of leads so as to surround the die pad, a plurality of members that connect the die pad and the inner edge of the heat dissipating plate, and a suspension lead linked to the outer extension of the heat dissipating plate, wherein a semiconductor chip the outer shape of which is larger than the die pad is mounted over the die pad and the members. The top surface of the die pad and the top surface of the members at the part in opposition to the back surface of the semiconductor chip are bonded to the back surface of the semiconductor chip in their entire surfaces with a silver paste. Heat in the semiconductor chip is conducted from the back surface of the semiconductor chip to the heat dissipating plate via the silver paste, the die pad, and the member, and dissipated to the outside of the semiconductor device therefrom via the lead.
摘要翻译： 提高半导体器件的散热特性。 半导体器件具有管芯焊盘，散热板，其形式为布置在管芯焊盘和多个引线之间的框架形式，以围绕管芯焊盘;多个构件，其将管芯焊盘和内部边缘连接 散热板和连接到散热板的外部延伸部的悬挂引线，其中外部形状大于管芯焊盘的半导体芯片安装在管芯焊盘和部件上。 芯片焊盘的顶表面和与半导体芯片的背面相对的部分的部件的顶表面在银浆的整个表面上与半导体芯片的背面接合。 半导体芯片中的热量通过银膏，芯片焊盘和部件从半导体芯片的背面传导到散热板，并通过引线从其散发到半导体器件的外部。
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