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24 条记录 (耗时 0.018 秒)

    Minutely working process
    1.
    发明授权
    Minutely working process 失效
    分工作流程

    公开(公告)号：US06315937B1

    公开(公告)日：2001-11-13

    申请号：US09349009

    申请日：1999-07-07

    申请人： Kazutaka Takeuchi ,  Ichiro Maekawa ,  Yasuhiro Tanaka

    发明人： Kazutaka Takeuchi ,  Ichiro Maekawa ,  Yasuhiro Tanaka

    IPC分类号： B29C5902

    CPC分类号： B29C59/022 ,  B29C43/021 ,  B29D11/00269 ,  B29D11/00278 ,  B29L2011/005

    摘要： A minutely working method of and apparatus for opposing the surface of a transfer member having a concave or convex pattern formed on the surface thereof and the surface of a workpiece to each other, heating the transfer member and thermally expanding the transfer member in the direction of a normal to the surface thereof to thereby transfer the concave or convex pattern to the workpiece.

    摘要翻译： 一种将其表面上形成有凹凸图案的转印构件的表面与工件表面相对的微小加工方法和装置，加热转印构件并使转印构件沿着 与其表面垂直，从而将凹凸图案转印到工件上。

    OPTICAL COMPOSITE MATERIAL AND OPTICAL ELEMENT
    2.
    发明申请
    OPTICAL COMPOSITE MATERIAL AND OPTICAL ELEMENT 有权
    光学复合材料和光学元件

    公开(公告)号：US20090264552A1

    公开(公告)日：2009-10-22

    申请号：US11997377

    申请日：2006-10-03

    申请人： Yasuhiro Tanaka ,  Katsumoto Hosokawa ,  Kazutaka Takeuchi

    发明人： Yasuhiro Tanaka ,  Katsumoto Hosokawa ,  Kazutaka Takeuchi

    IPC分类号： G02B1/04

    CPC分类号： C08J5/005 ,  B82Y30/00 ,  C08K9/04 ,  G02B1/04 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2998

    摘要： Provided is an optical synthetic resin composed of: a synthetic resin; and fine particles dispersed in the synthetic resin at a ratio of 0.1 vol % or more to 50 vol % or less, each having a maximum length of 1 nm or more to 30 nm or less, in which part of surfaces of the fine particles are modified with functional groups which themselves repel each other, and a distance between two arbitrary adjacent fine particles among the fine particles is in a range of 0.1 nm or more to 500 nm or less. The two arbitrary adjacent fine particles attract each other with an intermolecular force, thereby making it possible to provide an optical composite deviating from an additivity range.

    摘要翻译： 提供一种光学合成树脂，其由以下组成：合成树脂; 和分散在合成树脂中的细颗粒，其比例为0.1体积％以上至50体积％以下，各自具有1nm以上至30nm以下的最大长度，其中微粒表面的一部分为 其自身彼此排斥的官能团进行了改性，并且微粒中两个任意相邻的微粒之间的距离在0.1nm以上至500nm以下的范围内。 两个任意相邻的细颗粒以分子间力彼此吸引，从而可以提供偏离加和范围的光学复合材料。

    Optical composite material and optical element
    3.
    发明授权
    Optical composite material and optical element 有权
    光学复合材料和光学元件

    公开(公告)号：US08637588B2

    公开(公告)日：2014-01-28

    申请号：US11997377

    申请日：2006-10-03

    申请人： Yasuhiro Tanaka ,  Katsumoto Hosokawa ,  Kazutaka Takeuchi

    发明人： Yasuhiro Tanaka ,  Katsumoto Hosokawa ,  Kazutaka Takeuchi

    IPC分类号： G02B1/04 ,  B32B27/00 ,  B32B27/04 ,  B32B27/14 ,  C08K7/00 ,  C08K9/08

    CPC分类号： C08J5/005 ,  B82Y30/00 ,  C08K9/04 ,  G02B1/04 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2998

    摘要： An optical synthetic resin composed of: a synthetic resin; and fine particles dispersed in the synthetic resin at a ratio of 0.1 vol % or more to 50 vol % or less, each having a maximum length of 1 nm or more to 30 nm or less, in which part of surfaces of the fine particles are modified with functional groups which themselves repel each other, and a distance between two arbitrary adjacent fine particles among the fine particles is in a range of 0.1 nm or more to 500 nm or less. The two arbitrary adjacent fine particles attract each other with an intermolecular force, thereby making it possible to provide an optical composite deviating from an additivity range.

    摘要翻译： 一种光学合成树脂，由以下组成：合成树脂; 和分散在合成树脂中的细颗粒，其比例为0.1体积％以上至50体积％以下，各自的最大长度为1nm以上至30nm以下，其中，微粒表面的一部分为 其自身彼此排斥的官能团进行了改性，并且微粒中两个任意相邻的微粒之间的距离在0.1nm以上至500nm以下的范围内。 两个任意相邻的细颗粒以分子间力彼此吸引，从而可以提供偏离加和范围的光学复合材料。

    Process for producing tubular article for a fixation device
    4.
    发明授权
    Process for producing tubular article for a fixation device 失效
    用于生产用于固定装置的管状制品的方法

    公开(公告)号：US06312543B1

    公开(公告)日：2001-11-06

    申请号：US09019294

    申请日：1998-02-05

    申请人： Kazutaka Takeuchi ,  Yasuhiro Tanaka

    发明人： Kazutaka Takeuchi ,  Yasuhiro Tanaka

    IPC分类号： B32B3100

    CPC分类号： B29D23/001 ,  B29C43/102 ,  B29C53/40 ,  B29K2027/12 ,  B29K2071/00 ,  B29L2009/003 ,  B29L2023/00 ,  B32B1/08 ,  B32B15/08 ,  Y10T156/1038

    摘要： A process for producing a tubular article is provided which, comprising winding a first thermoplastic sheet film on a cylindrical member with the wind-starting portion and the wind-ending portion thereof overlapped, placing a metal tube outside the above wound film either (a) by winding a metal sheet with both of the sheet ends thereof abutted or (b) by fitting a metal tube, winding a second thermoplastic sheet film on the metal tube with the wind-starting portion and the wind-ending portion thereof overlapped, fitting a tubular member outside the wound second thermoplastic sheet film, and heating at least the first and second thermoplastic films to bond the overlapped portions of the thermoplastic sheet films. The tubular article produced according to the present invention has significantly improved film properties such as heat resistance (thermal expansion, break strength at high temperatures, etc.), thermal conductivity, electrical conductivity, and so forth in comparison with simple resin tubular articles (or films).

    摘要翻译： 本发明提供一种管状制品的制造方法，其特征在于，将第一热塑性片状薄膜卷绕在圆筒状的构件上，使其起风部和风挡部重叠，将金属管设置在上述卷绕膜的外侧， 通过卷绕其两个端部的金属片接合，或（b）通过装配金属管，将第二热塑性薄膜卷绕在金属管上，其中起风部分和其结束部分重叠， 并且至少加热第一和第二热塑性薄膜以结合热塑性薄膜的重叠部分。 根据本发明制造的管状制品与简单的树脂管状物品相比，具有显着改善的膜性能，例如耐热性（热膨胀，高温断裂强度等），导热性，导电性等。 电影）。

    Semiconductor integrated circuit device
    10.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US07911003B2

    公开(公告)日：2011-03-22

    申请号：US11512229

    申请日：2006-08-30

    申请人： Kazutaka Takeuchi

    发明人： Kazutaka Takeuchi

    IPC分类号： H01L23/62

    CPC分类号： H01L29/1087 ,  H01L21/823892 ,  H01L27/0928 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor integrated circuit device including a semiconductor substrate and a MOS transistor having a source diffusion region and a drain diffusion region formed in the semiconductor substrate. A well is formed in the semiconductor substrate. A back gate diffusion region is defined in the vicinity of the source diffusion region or the drain diffusion region. The back gate diffusion region is of a conductivity type that is the same as that of the source diffusion region or the drain diffusion region. A potential control layer, arranged in the semiconductor substrate or under the well, controls the potential at the semiconductor substrate or the well.

    摘要翻译： 一种半导体集成电路器件，包括半导体衬底和形成在半导体衬底中的源极扩散区和漏极扩散区的MOS晶体管。 在半导体衬底中形成阱。 背栅极扩散区域限定在源极扩散区域或漏极扩散区域附近。 背栅极扩散区域是与源极扩散区域或漏极扩散区域相同的导电类型。 布置在半导体衬底或阱下的电位控制层控制半导体衬底或阱处的电位。