摘要:
An optical radio system includes a host device, an end device, and a repeater. The host device and the end device communicate with each other via the repeater by use of optical radio. The repeater includes a section for receiving a first light signal from one of the host device and the end device, a section for converting the received first light signal into a first electric signal, a section for frequency-converting the first electric signal into a second electric signal, and a section for generating a second light signal in response to the second electric signal and transmitting the generated second light signal. The repeater also includes a section for demodulating one of the first electric signal and the second electric signal into a baseband signal, a section for detecting a quality of the baseband signal, and a section for enabling transmission of the second light signal only when the detected quality of the baseband signal is equal to or greater than a predetermined quality.
摘要:
A repeater for packet data optical communication between terminal devices includes a first section and a second section. The first section includes a first device for receiving a first optical signal transmitted from a terminal device and for converting the first optical signal into a first electric signal, a second device for frequency-converting the first electric signal to a second electric signal, and a third device for converting the second electric signal into a second optical signal and for transmitting the second optical signal. The second section includes a fourth device for receiving a third optical signal and for converting the third optical signal into a third electric signal, a fifth device for frequency-converting the third electric signal to a fourth electric signal, and a sixth device for converting the fourth electric signal into a fourth optical signal and for transmitting the fourth optical signal to a terminal device.
摘要:
A semiconductor laser, includes: a first cladding layer; an active layer that is formed on top of the first cladding layer; a second cladding layer that is formed on top of the active layer and has a different type of conductivity to the first cladding layer; an etch-stop layer that is formed on top of the second cladding layer and has a same type of conductivity as the second cladding layer; and a light-confining construction that is formed on top of the etch-stop layer by an etching process. The etch-stop layer has a surface part that contacts the light-confining construction. This surface part is composed of an (AlxGa1−x)yIn1−yP semiconductor, where 0.2≦x
摘要翻译:一种半导体激光器,包括:第一包层; 形成在所述第一包层的顶部上的有源层; 第二覆层,形成在所述有源层的顶部上并且具有与所述第一包层不同的导电性; 蚀刻停止层,其形成在所述第二包层的顶部上,并且具有与所述第二包层相同类型的导电性; 以及通过蚀刻工艺形成在蚀刻停止层的顶部上的光限制结构。 蚀刻停止层具有接触限光结构的表面部分。 该表面部分由(Al x Ga 1-x)y In 1-y P半导体组成,其中0.2 <= x <0.7且0
摘要:
An optical device includes a light-emitting element for irradiating light onto an information recording medium, a diffraction grating for splitting light emitted from said light-emitting element into a plurality of beams, a focussing member for focussing the plurality of beams onto the information recording medium, a deflection member for deflecting the plurality of beams after they have been reflected from the information recording medium; and a photodetector for receiving the plurality of beams after they have been deflected by the deflection member. The diffraction grating has a first grating region and a second grating region, which have different diffraction efficiencies. The zero-order diffraction light in the first grating region is used as the main beam for reproducing the information signal, and the +1-order or −1-order diffraction light in the second grating regions is used as sub-beams for reproduction of the tracking error signal. Thus, the light amount of both the main beam and the sub-beams can be increased without increasing the light emission of the semiconductor laser element 1, and the S/N ratio of the main beam and the sub-beams can be enhanced.
摘要:
A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.
摘要:
A diffraction element includes a diffraction grating for dividing a light beam, emitted from a light source along a predetermined path, into a principal light beam and at least two auxiliary light beams, and a hologram for separating the beam, which has been reflected from an optical information recording medium, from the predetermined path. The diffraction grating and the hologram are integrated together by being formed in alignment with each other in opposite portions of a block of glass or plastics. A slide is provided at at least a portion of the diffraction element and includes a peripheral wall in sliding engagement with a cylindrical surface coaxial with an optical axis of the diffraction element to permit the diffraction element to be rotatable about the optical axis.
摘要:
Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.
摘要:
A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.
摘要:
An optical pickup that is equipped with a photodetector unit, irradiates an optical disc with a laser beam, and receives returning light reflected by the optical disc, where the optical pickup is constructed to (1) divide the laser beam into a main beam, a preceding sub-beam, and a succeeding sub-beam, (2) direct the main beam, the preceding sub-beam, and the succeeding sub-beam toward the optical disc, and (3) divide returning lights of the main beam, the preceding sub-beam, and the succeeding sub-beam respectively into first-fourth main returning lights, first-fourth preceding returning lights, and first-fourth succeeding returning lights, and the photodetector unit includes: first-fourth main photodetectors that respectively receive the first-fourth main returning lights; first-fourth preceding photodetectors that respectively receive the first-fourth preceding returning lights; and first-fourth succeeding photodetectors that respectively receive the first-fourth succeeding returning lights. A tracking error signal appropriate to the optical disc to be reproduced is selected from three tracking error signals detected according to the detection signals from the photodetectors, and a tracking servo is driven according to the selected tracking error signal.
摘要:
A lead frame includes a die pad including a die pad main portion having a large thickness and a die pad peripheral portion having an intermediate thickness smaller than that of the die pad main portion, provided on at least one side of the die pad main portion, at least one support lead connected to the die pad, and at least two first inner leads having a small thickness smaller than that of the die pad peripheral portion, arranged such that end portions thereof are opposed to the die pad peripheral portion. The thick die pad provides good heat release properties, and reducing the thickness of the leads allows fine pitched leads to be produced. Such a lead frame can be manufactured easily by press stamping after belt-shaped regions having different thickness are formed by rolling.