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1.发明授权
公开(公告)号：US5751756A
公开(公告)日：1998-05-12
申请号：US707566
申请日：1996-09-04
申请人： Toru Takayama , Osamu Imafuji , Masaaki Yuri , Masahiro Kume , Akio Yoshikawa
发明人： Toru Takayama , Osamu Imafuji , Masaaki Yuri , Masahiro Kume , Akio Yoshikawa
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2004 , H01S5/205
摘要： A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.
摘要翻译： 在n型半导体衬底上依次形成由n型半导体层，由n型半导体层构成的覆层和有源层构成的缓冲层。 在有源层上形成有由p型半导体层构成的第一光导层，该p型半导体层包括由具有小于有源层的带隙的p型半导体层构成的损耗变化层和第二光导层 由p型半导体层构成。 在第二光导层上形成由条带延伸的p型半导体层构成的第三光导层。 在第二导光层上的第三光导层的两侧形成有对由在n型半导体层构成的有源层中产生的激光产生透明的电流阻挡层。
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公开(公告)号：US5617435A
公开(公告)日：1997-04-01
申请号：US404995
申请日：1995-03-16
申请人： Hideo Nagai , Toru Takayama , Masahiro Kume , Akio Yoshikawa
发明人： Hideo Nagai , Toru Takayama , Masahiro Kume , Akio Yoshikawa
CPC分类号： H01S5/141 , H01S3/109 , H01S2301/145 , H01S3/08027 , H01S5/0092 , H01S5/0658 , H01S5/14 , H01S5/143
摘要： A semiconductor laser emits semiconductor laser light with TM-mode oscillation. The emitted semiconductor laser light is collimated by a first collimating lens, passes through a Brewster plate that is arranged so that the direction of Brewster plane's p-polarized light is in alignment with the direction of polarization of the emitted semiconductor laser light, and is coupled to an incident portion of a wavelength-conversion waveguide by means of a focusing lens. While being guided through the waveguide, the emitted semiconductor laser light is converted into second-harmonic light by means of a polarization inversion region. Semiconductor laser light emanating from an emitting portion of the waveguide reflects from an output mirror towards a diffraction grating, for modulation in wavelength. Second-harmonic light emanating from the emitting portion of the waveguide is outputted from the output mirror.
摘要翻译： 半导体激光器发射具有TM模振荡的半导体激光。 发射的半导体激光由第一准直透镜准直，穿过布鲁斯特板，其布置成使得布鲁斯特平面的p偏振光的方向与所发射的半导体激光的偏振方向一致，并被耦合 通过聚焦透镜到波长转换波导的入射部分。 当通过波导引导时，发射的半导体激光通过偏振反转区域转换成二次谐波光。 从波导的发射部分发出的半导体激光从输出镜向衍射光栅反射，用于在波长上进行调制。 从输出镜输出从波导的发射部分发出的二次谐波。
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公开(公告)号：US20090232178A1
公开(公告)日：2009-09-17
申请号：US12392469
申请日：2009-02-25
申请人： Koichi HAYAKAWA , Toru Takayama , Masahiro Kume , Tomoya Satoh , Isao Kidoguchi
发明人： Koichi HAYAKAWA , Toru Takayama , Masahiro Kume , Tomoya Satoh , Isao Kidoguchi
IPC分类号： H01S5/327
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/1064 , H01S5/2231 , H01S5/3403 , H01S5/3432 , H01S5/34326 , H01S5/4087 , H01S2301/18
摘要： A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf1 and having a length L3 from a front facet, a first rear end region having a width Wr1 and having a length L1 from a rear facet, and a first tapered region located between the first front end region and the first rear end region and having a length L2, and the relation of Wf1>Wr1 is satisfied. The ridge structure in the second light emitting portion includes a second front end region having a width Wf2 and having a length L6 from a front facet, a second rear end region having a width Wr2 and having a length L4 from a rear facet, and a second tapered region located between the second front end region and the second rear end region and having a length L5, and the relation of Wf2>Wr2 is satisfied. The relations of L1+L2+L3=L4+L5+L6, Wf1 L4 are also satisfied.
摘要翻译： 半导体激光装置具有比第一发光部的发光波长长的第一发光部和第二发光部。 第一发光部分和第二发光部分中的每一个具有用于载体注入的条形脊结构。 第一发光部的脊结构具有第一前端区域，具有宽度Wf1并且具有来自前端面的长度L3，具有宽度Wr1的第一后端区域和具有来自后面的长度L1的第一前端区域，以及 位于第一前端区域和第一后端区域之间并且具有长度L2的第一锥形区域，并且满足Wf1> Wr1的关系。 第二发光部的脊部结构包括具有宽度Wf2的第二前端区域，具有来自前端面的长度L6，具有宽度Wr2的第二后端区域，并且具有来自后面的长度L4， 位于第二前端区域和第二后端区域之间并且具有长度L5的第二锥形区域，并且满足Wf2> Wr2的关系。 还满足L1 + L2 + L3 = L4 + L5 + L6，Wf1
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4.发明申请公开(公告)号：US20090074022A1
公开(公告)日：2009-03-19
申请号：US12166703
申请日：2008-07-02
IPC分类号： H01S5/026
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/4087
摘要： In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.
摘要翻译： 在其中将第一半导体激光元件和第二半导体激光元件集成到由化合物半导体制成的基板上的双波长半导体激光器中，第一半导体激光元件的蚀刻阻挡层的构成材料是允许扩散的材料 的杂质比第二半导体激光元件的蚀刻停止体的构成材料容易。
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公开(公告)号：US5587334A
公开(公告)日：1996-12-24
申请号：US285357
申请日：1994-08-03
申请人： Hiroki Naito , Masahiro Kume , Hideyuki Sugiura , Toru Takayama , Kunio Itoh , Issei Ohta , Hirokazu Shimizu
发明人： Hiroki Naito , Masahiro Kume , Hideyuki Sugiura , Toru Takayama , Kunio Itoh , Issei Ohta , Hirokazu Shimizu
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2004 , H01S5/2013 , H01S5/221 , H01S5/3211 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.
摘要翻译： 用作780nm波段的低工作电流和低噪声的半导体激光器件用作光盘的光源及其制造方法。 该装置包括：一定导电型Ga1-Y1AlY1As第一导光层，具有所述一定导电类型的Ga1-Y2AlY2As第二导光层，或In0.5Ga0.5P或In0.5（GaAl）0.5P或InGaAsP 第二导光层，在有源层的主平面的至少一个侧面依次形成; 形成在第二导光层上并具有条状窗的相反导电型Ga1-ZAlZAs电流阻挡层; 以及形成在所述条状窗口上的所述导光层具有相同导电类型的Ga1-Y3AlY3As覆层，其中在Y1，Y2 Y3和Z之间建立Z> Y3> Y2和Y1> Y2的关系，其定义AlAs 摩尔分数。
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6.发明授权公开(公告)号：US07706423B2
公开(公告)日：2010-04-27
申请号：US12166703
申请日：2008-07-02
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/4087
摘要： In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.
摘要翻译： 在其中将第一半导体激光元件和第二半导体激光元件集成到由化合物半导体制成的基板上的双波长半导体激光器中，第一半导体激光元件的蚀刻阻挡层的构成材料是允许扩散的材料 的杂质比第二半导体激光元件的蚀刻停止体的构成材料容易。
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7.发明授权Low operating current and low noise semiconductor laser device for optical disk memories 失效用于光盘存储器的低工作电流和低噪声半导体激光器件
公开(公告)号：US5386429A
公开(公告)日：1995-01-31
申请号：US40655
申请日：1993-03-31
申请人： Hiroki Naito , Masahiro Kume , Hideyuki Sugiura , Toru Takayama , Kunio Itoh , Issei Ohta , Hirokazu Shimizu
发明人： Hiroki Naito , Masahiro Kume , Hideyuki Sugiura , Toru Takayama , Kunio Itoh , Issei Ohta , Hirokazu Shimizu
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2004 , H01S5/2013 , H01S5/221 , H01S5/3211 , H01S5/32308 , H01S5/3432
摘要： A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.
摘要翻译： 适合作为光盘的光源的半导体激光器装置可以在780nm波段的低噪声的低工作电流下工作。 该装置包括：一定导电型Ga1-Y1AlY1As第一导光层，具有所述一定导电类型的Ga1-Y2AlY2As第二导光层，或In0.5Ga0.5P或In0.5（GaAl）0.5P或InGaAsP 第二导光层，在有源层的主平面的至少一个侧面依次形成; 形成在第二导光层上并具有条状窗的相反导电型Ga1-ZAlZAs电流阻挡层; 以及与形成在条状窗上的导光层相同的导电类型的Ga1-Y3AlY3As包覆层。 Z> Y3> Y2和Y1> Y2的关系定义了AlAs摩尔分数。
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8.发明授权公开(公告)号：US08669571B2
公开(公告)日：2014-03-11
申请号：US13701998
申请日：2011-07-04
申请人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
发明人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
IPC分类号： H01L33/00
CPC分类号： G09F13/04 , G02B19/0028 , G02B19/0066 , G02B19/0071 , H01L33/005 , H01L33/50 , H01L33/58
摘要： A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.
摘要翻译： 发光装置的配光控制器包括由设置在插入透明粘合剂的LED上的ZnO形成的第一光学部件和覆盖第一光学部件的第二光学部件。 第一光学构件包括具有正六边形形状的开口的第一凹部，其面积逐渐增加。 在第一凹部中，形成具有倾斜面的内壁面，其各自的底部由开口形状的六边形的一侧形成。 在第一光学构件的外侧，形成各自具有梯形形状的外壁面。 第二光学构件包括第二凹部，其布置成使得通过第一光学构件行进的光的光分布特性中的环形峰值处的光被全反射。
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公开(公告)号：US20060239321A1
公开(公告)日：2006-10-26
申请号：US11327405
申请日：2006-01-09
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01S5/028 , H01S5/0287 , H01S5/162 , H01S5/2214 , H01S5/2231 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087
摘要： A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single substrate. A first dielectric film which has a refractive index of n1 with respect to a wavelength λ between the first oscillation wavelength λ1 and the second oscillation wavelength λ2 and has a film thickness of approximately λ/(8n1) is formed at light emitting facets in the first semiconductor laser element and the second semiconductor laser element, from which the laser lights are emitted, and a second dielectric film having a refractive index of n2 and a film thickness of λ/(8n2) are formed on the first dielectric film.
摘要翻译： 半导体激光器件包括用于发射具有第一振荡波长λ1的第一激光的第一半导体激光元件和用于发射具有第二振荡波长λ的第二激光元件的第二半导体激光元件 其中形成在单个衬底上的第二层（其中λ2
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10.发明授权
公开(公告)号：US06165812A
公开(公告)日：2000-12-26
申请号：US913659
申请日：1997-09-19
申请人： Akihiko Ishibashi , Yuuzaburou Ban , Hidemi Takeisi , Nobuyuki Uemura , Masahiro Kume , Isao Kidoguchi
发明人： Akihiko Ishibashi , Yuuzaburou Ban , Hidemi Takeisi , Nobuyuki Uemura , Masahiro Kume , Isao Kidoguchi
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/007
摘要： The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.
摘要翻译： PCT No.PCT / JP97 / 00056 Sec。 371 1999年9月19日第 102（e）1999年9月19日PCT PCT 1997年1月14日PCT公布。 公开号WO97 / 26680 日期1997年7月24日制造氮化镓基化合物半导体的方法包括以下步骤：在基板10上形成第一温度范围内的多晶氮化物层11a; 在第二温度范围内在多晶氮化物层11a上形成氮化镓单晶的核层11b; 在第三温度范围内生长氮化镓单晶的核层11b，使得氮化镓单晶的核层11b的晶体在平行于衬底10的表面的方向上彼此接触; 并且在与衬底10的表面垂直的方向上的第四温度范围内生长氮化镓单晶的核层11b。
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