公开(公告)号：US08367442B2

公开(公告)日：2013-02-05

申请号：US12998521

申请日：2009-10-27

申请人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L21/786

摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

公开(公告)号：US20110263058A1

公开(公告)日：2011-10-27

申请号：US12998521

申请日：2009-10-27

申请人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L33/32

CPC分类号： H01S5/0207 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02492 ,  H01S5/32341

摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

摘要翻译： 一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

公开(公告)号：US08399272B2

公开(公告)日：2013-03-19

申请号：US12998521

申请日：2009-10-27

申请人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Kazuyuki Yamae ,  Hiroshi Fukshima ,  Masaharu Yasuda ,  Tomoya Iwahashi ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L21/786

CPC分类号： H01S5/0207 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02492 ,  H01S5/32341

摘要： A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

摘要翻译： 一种制造半导体发光元件的方法包括在具有透明性的第一晶片上形成多层氮化物半导体层的半导体层形成步骤; 将多层氮化物半导体层接合到第一晶片的接合步骤; 沟槽形成步骤，形成从第一晶片的下表面延伸到多层氮化物半导体层的凹槽; 施加步骤，通过所述第一晶片向所述多层氮化物半导体层的下表面施加第一光，以降低所述多层氮化物半导体层与所述第一晶片之间的结合力; 分离步骤，从所述多层氮化物半导体层分离所述第一晶片; 以及切割步骤，沿着所述凹槽切割所述第二晶片以分成多个所述半导体发光元件。

公开(公告)号：US20110037092A1

公开(公告)日：2011-02-17

申请号：US12989630

申请日：2009-06-01

申请人： Atsuhiro Hori ,  Syuusaku Maeda ,  Hidenori Kamei

发明人： Atsuhiro Hori ,  Syuusaku Maeda ,  Hidenori Kamei

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/46

摘要： A light-emitting device includes an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15, which are sequentially stacked on a substrate 11; and a p-side electrode 16 formed on the p-type semiconductor layer 15. The p-side electrode 16 includes an adhesive layer 61 formed in contact with the p-type semiconductor layer 15, having a thickness ranging from 0.5 atomic layer to 1.5 atomic layer, and made of platinum; and a reflective layer 62 formed in contact with the adhesive layer 61, and made of a material containing silver.

摘要翻译： 发光器件包括依次堆叠在衬底11上的n型半导体层13，发光层14和p型半导体层15; 和形成在p型半导体层15上的p侧电极16.p侧电极16包括与p型半导体层15接触形成的粘合剂层61，其厚度范围为0.5原子层至1.5 原子层，由铂制成; 以及与粘合剂层61接触形成并由含有银的材料制成的反射层62。

公开(公告)号：US20100258837A1

公开(公告)日：2010-10-14

申请号：US12739295

申请日：2008-10-30

申请人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L33/38 ,  H01L33/62

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency.The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

摘要翻译： 在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下， 如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。 在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。 因此，n侧电极的长度优选为基板的整个周长的20〜50％。

公开(公告)号：US08309975B2

公开(公告)日：2012-11-13

申请号：US12739295

申请日：2008-10-30

申请人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

发明人： Atsuhiro Hori ,  Hidenori Kamei ,  Syuusaku Maeda

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

摘要翻译： 在导电性基板的一个表面上形成有发光层的半导体发光元件和与发光层同一侧形成有n型电极和p型电极的情况下， 如果施加较大的电力，则在n侧电极附近产生热量以降低发光效率的问题。 n侧电极在基板的角部或沿着边缘具有预定的长度，以将从n侧电极流入的电流分散到基板中，从而避免n侧电极附近的发热。 在这种类型的半导体发光元件中，n侧电极的存在减少了发光面积。 因此，n侧电极的长度优选为基板的整个周长的20〜50％。

公开(公告)号：US07875898B2

公开(公告)日：2011-01-25

申请号：US11859092

申请日：2007-09-21

申请人： Syuusaku Maeda

发明人： Syuusaku Maeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78

摘要： The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.

摘要翻译： 用于制造半导体器件的本发明的方法是一种使用激光照射来制造半导体器件的方法，其中所述半导体器件包含在至少一个衬底和半导体层中的镓，以分隔其上形成有半导体层的衬底，其中该方法包括 ：通过用激光沿分割位置照射基板，将基板浸入酸溶液中，并将基板沿着形成有凹槽的边界分隔成单独的基板，形成用作各个基板之间的边界的槽。 以这种方式，提供一种用于制造半导体器件的方法，其中在分离含镓半导体器件衬底期间除去在激光照射期间附着的镓化合物的沉积物，分隔表面形成为平坦且均匀， 的电极连续性故障和树脂剥离低。

公开(公告)号：US07291510B2

公开(公告)日：2007-11-06

申请号：US11188601

申请日：2005-07-25

申请人： Syuusaku Maeda

发明人： Syuusaku Maeda

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L33/0095

摘要： The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.

摘要翻译： 用于制造半导体器件的本发明的方法是一种使用激光照射来制造半导体器件的方法，其中所述半导体器件包含在至少一个衬底和半导体层中的镓，以分隔其上形成有半导体层的衬底，其中该方法包括 ：通过用激光沿分割位置照射基板，将基板浸入酸溶液中，并将基板沿着形成有凹槽的边界分隔成单独的基板，形成用作各个基板之间的边界的槽。 以这种方式，提供一种用于制造半导体器件的方法，其中在分离含镓半导体器件衬底期间除去在激光照射期间附着的镓化合物的沉积物，分隔表面形成为平坦且均匀， 的电极连续性故障和树脂剥离低。

公开(公告)号：US20060115962A1

公开(公告)日：2006-06-01

申请号：US11188601

申请日：2005-07-25

申请人： Syuusaku Maeda

发明人： Syuusaku Maeda

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L33/0095

摘要： The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.

摘要翻译： 用于制造半导体器件的本发明的方法是一种使用激光照射来制造半导体器件的方法，其中所述半导体器件包含在至少一个衬底和半导体层中的镓，以分隔其上形成有半导体层的衬底，其中该方法包括 ：通过用激光沿分割位置照射基板，将基板浸入酸溶液中，并将基板沿着形成有凹槽的边界分隔成单独的基板，形成用作各个基板之间的边界的槽。 以这种方式，提供一种用于制造半导体器件的方法，其中在分离含镓半导体器件衬底期间除去在激光照射期间附着的镓化合物的沉积物，分隔表面形成为平坦且均匀， 的电极连续性故障和树脂剥离低。