公开(公告)号：US08345380B2

公开(公告)日：2013-01-01

申请号：US13208384

申请日：2011-08-12

申请人： Yo Sato ,  Keiichi Nagasaka ,  Masato Shiimoto ,  Masato Matsubara

发明人： Yo Sato ,  Keiichi Nagasaka ,  Masato Shiimoto ,  Masato Matsubara

IPC分类号： G11B5/127

CPC分类号： G11B5/3133 ,  G11B2005/0024

摘要： The present invention provides a spin torque oscillator that can realize stable oscillation and has high reliability. A laminated structure including a first magnetic layer 1 having a bcc crystal structure and having in-plane magnetic anisotropy and a second magnetic layer 2 having perpendicular magnetic anisotropy laminated on the first magnetic layer 1 and including a multilayer film of Co and Ni is used.

摘要翻译： 本发明提供一种能够实现稳定振荡并具有高可靠性的自旋转矩振荡器。 使用包括具有bcc晶体结构并具有面内磁各向异性的第一磁性层1和层叠在第一磁性层1上并具有Co和Ni的多层膜的具有垂直磁各向异性的第二磁性层2的叠层结构。

公开(公告)号：US08537497B2

公开(公告)日：2013-09-17

申请号：US13402949

申请日：2012-02-23

申请人： Keiichi Nagasaka ,  Masato Shiimoto ,  Yo Sato

发明人： Keiichi Nagasaka ,  Masato Shiimoto ,  Yo Sato

IPC分类号： G11B5/31 ,  G11B5/02 ,  G11B5/23

CPC分类号： G11B5/3146 ,  G11B2005/0024 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： In high frequency magnetic assisted recording technique, a spin torque oscillator that stably oscillates at a low current and a magnetic recording head with high recording density are provided. In a magnetic recording head including an oscillator that generates a high frequency magnetic field, a spin injection layer structure of two laminated magnetic layers which are coupled to be anti-parallel is adopted. A product Ms×t of the saturated magnetization Ms and the film thickness t of the first magnetic layer close to a field generation layer is smaller than a product Ms×t of the second magnetic layer remote from the field generation layer.

摘要翻译： 在高频磁辅助记录技术中，提供了以低电流稳定振荡的自旋扭矩振荡器和具有高记录密度的磁记录头。 在包括产生高频磁场的振荡器的磁记录头中，采用耦合为反并联的两个层叠磁性层的自旋注入层结构。 饱和磁化强度Ms的乘积Ms×t和接近场产生层的第一磁性层的膜厚t小于远离场发生层的第二磁性层的乘积Ms×t。

公开(公告)号：US20120113542A1

公开(公告)日：2012-05-10

申请号：US13287292

申请日：2011-11-02

申请人： Masukazu Igarashi ,  Yo Sato ,  Masato Shiimoto ,  Keiichi Nagasaka

发明人： Masukazu Igarashi ,  Yo Sato ,  Masato Shiimoto ,  Keiichi Nagasaka

IPC分类号： G11B5/127 ,  G11B21/02

CPC分类号： G11B5/3146 ,  G11B5/3116 ,  G11B5/3133 ,  G11B5/315 ,  G11B2005/0024

摘要： The present invention provides a magnetic recording head and a magnetic recording device that realize information transfer speed exceeding 1 Gbit/s in microwave assisted magnetic recording applied to a magnetic recording device having recording density exceeding 1 Tbit/in2. Concerning a reference layer that supplies spin torque to a high-speed magnetization rotator serving as a microwave field generation source, when an externally applied field to the reference layer is represented as Hext, a magnetic anisotropy field of the reference layer is represented as Hk, and an effective demagnetizing field in a vertical direction of a film surface of the reference layer is represented as Hd-eff, the fixing layer is configured to satisfy conditions Hext−Hk+Hd-eff>0 and Hext+Hk−Hd-eff>0.

摘要翻译： 本发明提供一种在记录密度超过1Tbit / in2的磁记录装置中实现微波辅助磁记录中超过1Gbit / s的信息传送速度的磁记录头和磁记录装置。 关于向作为微波场产生源的高速磁化旋转体提供自旋转矩的参考层，当将参考层的外部施加场表示为Hext时，参考层的磁各向异性场表示为Hk， 将参考层的膜表面的垂直方向上的有效去磁场表示为Hd-eff，固定层被配置为满足条件Hext-Hk + Hd-eff> 0和Hext + Hk-Hd-eff> 0。

公开(公告)号：US08773822B2

公开(公告)日：2014-07-08

申请号：US13296866

申请日：2011-11-15

申请人： Masato Matsubara ,  Masato Shiimoto ,  Hiroyuki Katada ,  Keiichi Nagasaka

发明人： Masato Matsubara ,  Masato Shiimoto ,  Hiroyuki Katada ,  Keiichi Nagasaka

IPC分类号： G11B5/33

CPC分类号： G11B5/3146 ,  G11B2005/0024

摘要： In a conventional type magnetic head that performs microwave assisted recording, since a difference in a demagnetizing field between an end and the center of a field generation layer (FGL) grows larger when saturation magnetization of the FGL grows larger, the FGL that generates a microwave is not oscillated in a state of a single domain. Then, a spin-torque oscillator according to the present invention used for a magnetic head for microwave assisted recording is provided with at least one fixed layer, one non-magnetic intermediate layer and one alternating-current magnetic field generation layer respectively and is provided with a structure where saturation magnetization at ends of a film except an end in a direction from an air bearing surface to a surface opposite to it is made smaller than saturation magnetization in the center of the film of the alternating-current magnetic field generation layer.

摘要翻译： 在执行微波辅助记录的常规型磁头中，由于当FGL的饱和磁化强度增大时场强发生层（FGL）的端部和中心之间的消磁场的差异增大，所以产生微波的FGL 在单个域的状态下不振荡。 然后，本发明的用于微波辅助记录磁头的自旋转矩振荡器分别设置有至少一个固定层，一个非磁性中间层和一个交流磁场产生层，并且具有 除了在从空气轴承表面到与其相反的表面的方向上的端部之外，膜的端部处的饱和磁化强度小于交流磁场产生层的膜中心的饱和磁化强度的结构。

公开(公告)号：US08687319B2

公开(公告)日：2014-04-01

申请号：US13404036

申请日：2012-02-24

申请人： Masukazu Igarashi ,  Masato Matsubara ,  Keiichi Nagasaka ,  Masato Shiimoto

发明人： Masukazu Igarashi ,  Masato Matsubara ,  Keiichi Nagasaka ,  Masato Shiimoto

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3146 ,  G11B2005/0024

摘要： A spin torque oscillator for microwave assisted recording includes a perpendicular free layer having a magnetic anisotropy axis in a direction perpendicular to a film surface, and an in-plane free layer composed of a magnetic film effectively having a magnetization easy plane on a film surface. When electric currents flows from the in-plane free layer side to the perpendicular free layer side, both free layers exchange spin information and thereby rotate their respective magnetizations almost antiparallel to each other and along a boundary surface with high-speed. Preferably, the perpendicular free layer is thinner than the in-plane free layer. It is also preferable that a magnetic anisotropy field of the perpendicular free layer attributable to materials should balance, in reverse directions, with an effective demagnetizing field in the perpendicular direction. Furthermore, the perpendicular free layer is preferably placed on the main pole side.

摘要翻译： 用于微波辅助记录的自旋扭矩振荡器包括在垂直于膜表面的方向上具有磁各向异性轴的垂直自由层，以及由在膜表面上具有易磁化平面的磁性膜构成的面内自由层。 当电流从平面内自由层侧流向垂直自由层侧时，两个自由层交换自旋信息，从而使它们各自的磁化几乎反平行并沿着边界表面高速旋转。 优选地，垂直自由层比平面内自由层薄。 由于材料的垂直自由层的磁各向异性场也优选在相反的方向上平衡，并且在垂直方向上具有有效的去磁场。 此外，垂直自由层优选放置在主极侧。

公开(公告)号：US20130215530A1

公开(公告)日：2013-08-22

申请号：US13401650

申请日：2012-02-21

申请人： Masukazu Igarashi ,  Masato Matsubara ,  Keiichi Nagasaka ,  Masato Shiimoto

发明人： Masukazu Igarashi ,  Masato Matsubara ,  Keiichi Nagasaka ,  Masato Shiimoto

IPC分类号： G11B5/02

CPC分类号： G11B5/3133 ,  G11B5/1278 ,  G11B2005/0024

摘要： In one embodiment, a magnetic data storage system includes a main pole power supply adapted for supplying an excitation current to a main pole coil, a microwave-assisted magnetic recording (MAMR) device including a spin-torque oscillator (STO) element, the STO element having a field generation layer (FGL) and a polarization layer, a timing-control circuit adapted for determining a duration of a main pole magnetic moment inversion process and signaling a start of the main pole magnetic moment inversion process, and a current-regulating circuit comprising an STO power supply adapted for supplying current to the STO element, wherein the STO power supply prevents degradation of a single rotating magnetic domain structure in the FGL into a closure magnetic domain structure in the FGL. Other systems and methods for preventing degradation of the single rotating magnetic domain structure in the FGL into a closure magnetic domain structure are described for more embodiments.

摘要翻译： 在一个实施例中，磁数据存储系统包括适于向主极线圈提供激励电流的主极电源，包括自旋转矩振荡器（STO）元件的微波辅助磁记录（MAMR）器件，STO 具有场产生层（FGL）和偏振层的元件，定时控制电路，用于确定主极磁矩反转处理的持续时间并发出主极磁矩反转处理的开始，以及电流调节 包括适于向STO元件提供电流的STO电源的电路，其中STO电源防止FGL中的单个旋转磁畴结构的劣化成为FGL中的闭合磁畴结构。 对于更多实施例，描述了用于防止FGL中的单个旋转磁畴结构退化成闭合磁畴结构的其它系统和方法。

公开(公告)号：US08547656B2

公开(公告)日：2013-10-01

申请号：US13401650

申请日：2012-02-21

申请人： Masukazu Igarashi ,  Masato Matsubara ,  Keiichi Nagasaka ,  Masato Shiimoto

发明人： Masukazu Igarashi ,  Masato Matsubara ,  Keiichi Nagasaka ,  Masato Shiimoto

IPC分类号： G11B5/02

CPC分类号： G11B5/3133 ,  G11B5/1278 ,  G11B2005/0024

摘要： In one embodiment, a magnetic data storage system includes a main pole power supply adapted for supplying an excitation current to a main pole coil, a microwave-assisted magnetic recording (MAMR) device including a spin-torque oscillator (STO) element, the STO element having a field generation layer (FGL) and a polarization layer, a timing-control circuit adapted for determining a duration of a main pole magnetic moment inversion process and signaling a start of the main pole magnetic moment inversion process, and a current-regulating circuit comprising an STO power supply adapted for supplying current to the STO element, wherein the STO power supply prevents degradation of a single rotating magnetic domain structure in the FGL into a closure magnetic domain structure in the FGL. Other systems and methods for preventing degradation of the single rotating magnetic domain structure in the FGL into a closure magnetic domain structure are described for more embodiments.

摘要翻译： 在一个实施例中，磁数据存储系统包括适于向主极线圈提供激励电流的主极电源，包括自旋转矩振荡器（STO）元件的微波辅助磁记录（MAMR）器件，STO 具有场产生层（FGL）和偏振层的元件，定时控制电路，用于确定主极磁矩反转处理的持续时间并发出主极磁矩反转处理的开始，以及电流调节 包括适于向STO元件提供电流的STO电源的电路，其中STO电源防止FGL中的单个旋转磁畴结构的劣化成为FGL中的闭合磁畴结构。 对于更多实施例，描述了用于防止FGL中的单个旋转磁畴结构退化成闭合磁畴结构的其它系统和方法。

公开(公告)号：US20120120518A1

公开(公告)日：2012-05-17

申请号：US13296866

申请日：2011-11-15

申请人： Masato Matsubara ,  Masato Shiimoto ,  Hiroyuki Katada ,  Keiichi Nagasaka

发明人： Masato Matsubara ,  Masato Shiimoto ,  Hiroyuki Katada ,  Keiichi Nagasaka

IPC分类号： G11B5/02

CPC分类号： G11B5/3146 ,  G11B2005/0024

摘要： In a conventional type magnetic head that performs microwave assisted recording, since a difference in a demagnetizing field between an end and the center of a field generation layer (FGL) grows larger when saturation magnetization of the FGL grows larger, the FGL that generates a microwave is not oscillated in a state of a single domain. Then, a spin-torque oscillator according to the present invention used for a magnetic head for microwave assisted recording is provided with at least one fixed layer, one non-magnetic intermediate layer and one alternating-current magnetic field generation layer respectively and is provided with a structure where saturation magnetization at ends of a film except an end in a direction from an air bearing surface to a surface opposite to it is made smaller than saturation magnetization in the center of the film of the alternating-current magnetic field generation layer.

摘要翻译： 在执行微波辅助记录的常规型磁头中，由于当FGL的饱和磁化强度增大时场强发生层（FGL）的端部和中心之间的消磁场的差异增大，所以产生微波的FGL 在单个域的状态下不振荡。 然后，本发明的用于微波辅助记录磁头的自旋转矩振荡器分别设置有至少一个固定层，一个非磁性中间层和一个交流磁场产生层，并且具有 除了在从空气轴承表面到与其相反的表面的方向上的端部之外，膜的端部处的饱和磁化强度小于交流磁场产生层的膜中心的饱和磁化强度的结构。

公开(公告)号：US20090323406A1

公开(公告)日：2009-12-31

申请号：US12404781

申请日：2009-03-16

申请人： Takao Ochiai ,  Hiroshi Ashida ,  Keiichi Nagasaka

发明人： Takao Ochiai ,  Hiroshi Ashida ,  Keiichi Nagasaka

IPC分类号： G11C11/00 ,  H01L21/00 ,  G11C11/14

CPC分类号： H01L27/222 ,  G11C11/14 ,  H01L29/82

摘要： A magnetic memory element includes an impurity element, and magnetic thin lines to which the impurity element is added to adjust the movement of a magnetic domain wall in a magnetic field. Applying a voltage to the magnetic thin lines controls a position of the magnetic domain wall to invert a magnetization direction of a magnetic recording layer adjacent to the magnetic domain wall, by which information is recorded.

摘要翻译： 磁存储元件包括杂质元素和杂质元素添加到其中以调节磁畴壁在磁场中的运动的磁性细线。 向磁性细线施加电压控制磁畴壁的位置，以反转记录有信息的磁畴壁附近的磁记录层的磁化方向。

公开(公告)号：US20070048485A1

公开(公告)日：2007-03-01

申请号：US11437757

申请日：2006-05-22

申请人： Arata Jogo ,  Hirotaka Oshima ,  Keiichi Nagasaka

发明人： Arata Jogo ,  Hirotaka Oshima ,  Keiichi Nagasaka

IPC分类号： B32B3/02

CPC分类号： H01F10/16 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/10 ,  Y10T428/21

摘要： A magnetoresistive effect element of a CPP type includes a fixed magnetization layer, a non-magnetic layer and a free magnetization layer formed of CoFeAl. The CoFeAl has a composition falling within a range defined by straight lines connecting points A, B, C, D, E, F and A, in that order, in a ternary composition diagram. The point A is (55, 10, 35), the point B is (50, 15, 35), the point C is (50, 20, 30), the point D is (55, 25, 20), the point E is (60, 25, 15), and the point F is (70, 15, 15), where coordinates of the composition of each point is represented by (Co content, Fe content, Al content). Each content is expressed by atomic percent.

摘要翻译： CPP型的磁阻效应元件包括固定磁化层，非磁性层和由CoFeAl形成的自由磁化层。 CoFeAl具有在三元组成图中按顺序连接点A，B，C，D，E，F和A的直线限定的范围内的组成。 点A是（55,10,35），点B是（50,15,35），点C是（50,20,30），点D是（55,25,20），点 E是（60,25,15），点F是（70,15,15），其中每个点的组成坐标由（Co含量，Fe含量，Al含量）表示。 每个内容以原子百分比表示。