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    Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device
    2.
    发明申请
    Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device 审中-公开
    磁阻效应元件，磁头，磁存储器件和磁存储器件

    公开(公告)号：US20070048485A1

    公开(公告)日：2007-03-01

    申请号：US11437757

    申请日：2006-05-22

    申请人： Arata Jogo ,  Hirotaka Oshima ,  Keiichi Nagasaka

    发明人： Arata Jogo ,  Hirotaka Oshima ,  Keiichi Nagasaka

    IPC分类号： B32B3/02

    CPC分类号： H01F10/16 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/10 ,  Y10T428/21

    摘要： A magnetoresistive effect element of a CPP type includes a fixed magnetization layer, a non-magnetic layer and a free magnetization layer formed of CoFeAl. The CoFeAl has a composition falling within a range defined by straight lines connecting points A, B, C, D, E, F and A, in that order, in a ternary composition diagram. The point A is (55, 10, 35), the point B is (50, 15, 35), the point C is (50, 20, 30), the point D is (55, 25, 20), the point E is (60, 25, 15), and the point F is (70, 15, 15), where coordinates of the composition of each point is represented by (Co content, Fe content, Al content). Each content is expressed by atomic percent.

    摘要翻译： CPP型的磁阻效应元件包括固定磁化层，非磁性层和由CoFeAl形成的自由磁化层。 CoFeAl具有在三元组成图中按顺序连接点A，B，C，D，E，F和A的直线限定的范围内的组成。 点A是（55,10,35），点B是（50,15,35），点C是（50,20,30），点D是（55,25,20），点 E是（60,25,15），点F是（70,15,15），其中每个点的组成坐标由（Co含量，Fe含量，Al含量）表示。 每个内容以原子百分比表示。

    Magnetoresistive effect device and method of manufacturing ferromagnetic structure
    4.
    发明申请
    Magnetoresistive effect device and method of manufacturing ferromagnetic structure 审中-公开
    磁阻效应器件及制造铁磁结构的方法

    公开(公告)号：US20070217083A1

    公开(公告)日：2007-09-20

    申请号：US11483565

    申请日：2006-07-11

    申请人： Keiichi Nagasaka ,  Hirotaka Oshima ,  Arata Jogo ,  Yutaka Shimizu

    发明人： Keiichi Nagasaka ,  Hirotaka Oshima ,  Arata Jogo ,  Yutaka Shimizu

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

    摘要： A spin valve film has a lamination structure of a pinned layer, a non-magnetic intermediate layer and a free layer. The pinned layer is made of ferromagnetic material and has a fixed magnetization direction. The non-magnetic intermediate layer is made of non-magnetic conductive material. The free layer is made of ferromagnetic material and changes a magnetization direction by external magnetic field. Electrodes let current flow through the spin valve film in a lamination direction. At least one of the pinned layer and the free layer includes a lamination portion of a first layer and a second layer stacked alternately. The first layer has a composition ratio of elements presenting ferromagnetism higher than that in the second layer. The second layer has a composition ratio of elements presenting non-magnetism higher than that in the first layer. The lamination portion includes at least two first layers and at least one second layer.

    摘要翻译： 自旋阀膜具有钉扎层，非磁性中间层和自由层的层压结构。 钉扎层由铁磁材料制成，具有固定的磁化方向。 非磁性中间层由非磁性导电材料制成。 自由层由铁磁材料制成，并通过外部磁场改变磁化方向。 电极使电流在层叠方向上流过自旋阀膜。 被钉扎层和自由层中的至少一个包括交替堆叠的第一层和第二层的层压部分。 第一层具有高于第二层中的铁磁性元素的组成比。 第二层具有高于第一层中的非磁性元素的组成比。 层压部分包括至少两个第一层和至少一个第二层。

    Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit
    5.
    发明授权
    Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
    磁阻元件，磁头，磁存储单元和磁存储单元

    公开(公告)号：US07428130B2

    公开(公告)日：2008-09-23

    申请号：US11410315

    申请日：2006-04-25

    申请人： Arata Jogo ,  Hirotaka Oshima ,  Takahiro Ibusuki ,  Yutaka Shimizu ,  Takuya Uzumaki

    发明人： Arata Jogo ,  Hirotaka Oshima ,  Takahiro Ibusuki ,  Yutaka Shimizu ,  Takuya Uzumaki

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/08

    摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.

    摘要翻译： 包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。 自由磁化层包括CoMnAl。 在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20）， 点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

    Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit
    6.
    发明申请
    Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
    磁阻元件，磁头，磁存储单元和磁存储单元

    公开(公告)号：US20070268632A1

    公开(公告)日：2007-11-22

    申请号：US11410315

    申请日：2006-04-25

    申请人： Arata Jogo ,  Hirotaka Oshima ,  Takahiro Ibusuki ,  Yutaka Shimizu ,  Takuya Uzumaki

    发明人： Arata Jogo ,  Hirotaka Oshima ,  Takahiro Ibusuki ,  Yutaka Shimizu ,  Takuya Uzumaki

    IPC分类号： G11B5/127

    CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/08

    摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.

    摘要翻译： 包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。 自由磁化层包括CoMnAl。 在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20）， 点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

    Magneto-resistive element, magnetic head and megnetic storage apparatus
    7.
    发明申请
    Magneto-resistive element, magnetic head and megnetic storage apparatus 失效
    磁阻元件，磁头和储能装置

    公开(公告)号：US20050264953A1

    公开(公告)日：2005-12-01

    申请号：US11137008

    申请日：2005-05-25

    申请人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/14 ,  H01F10/20 ,  H01F10/32

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/14 ,  H01F10/20 ,  H01F10/3272 ,  H01F10/3295

    摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

    摘要翻译： 磁阻元件采用CPP结构，并且包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。 钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。 第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻 控制层由导电铁磁氧化物制成。

    Magneto-resistive element, magnetic head and magnetic storage apparatus
    8.
    发明授权
    Magneto-resistive element, magnetic head and magnetic storage apparatus 失效
    磁阻元件，磁头和磁存储装置

    公开(公告)号：US07486487B2

    公开(公告)日：2009-02-03

    申请号：US11137008

    申请日：2005-05-25

    申请人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    发明人： Hirotaka Oshima ,  Reiko Kondo ,  Arata Jogo ,  Yutaka Shimizu ,  Atsushi Tanaka

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/14 ,  H01F10/20 ,  H01F10/3272 ,  H01F10/3295

    摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

    摘要翻译： 磁阻元件采用CPP结构，并包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。 钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。 第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻 控制层由导电铁磁氧化物制成。