摘要:
In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要:
Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. Use is made of a standard sample 40 for correction comprising a plurality of correction mark members 42a, 42b, . . . , the respective correction mark members 42a, 42b, being lined up at specified intervals kept therebetween in a specified direction, and respective widths thereof, in the specified direction, differing from each other so as to be of respective sizes as pre-set. Measurement of the respective widths of the correction mark members 42a, 42b, . . . is made to obtain respective measurement widths while authorized widths of the respective widths of the correction mark members 42a, 42b, . . . are kept stored in an image processing unit of the scanning electron microscope to thereby find differences between the respective measurement widths, and authorized widths corresponding thereto, and the differences are stored as respective correction functions, which are used in correcting the measurement width of the sample.
摘要:
The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it. Provided is a standard reference component for calibration for calibrating a scanning electron microscope that measures a length of a pattern in an observation area from information on the intensity of secondary electrons or reflected electrons generated by scanning an incident electron beam in the observation area on a measuring sample, having: a first substrate on which a multiple-layer is laminated and a second substrate with a recess for holding the first substrate, wherein the first substrate is held in the recess of the second substrate so that a normal direction of the multiple-layer surface may be roughly perpendicular to a normal direction of the second substrate surface, and the multiple-layer has a multiple-layer structure of a film containing silicon and a film containing molybdenum.
摘要:
Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. A standard sample for correction comprises a plurality of correction mark members, the respective correction mark members, being lined up at specified intervals in a specified direction, and respective widths thereof, in the specified direction, differing from each other so as to be of respective sizes as pre-set. Measurement of the respective widths of the correction mark members is made to obtain respective measurement widths while authorized widths of the correction mark members are kept stored in an image processing unit of the scanning electron microscope to thereby find differences between the respective measurement widths, and authorized widths corresponding thereto, and the differences are stored as respective correction functions to correct the measurement width of the sample.
摘要:
The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it. Provided is a standard reference component for calibration for calibrating a scanning electron microscope that measures a length of a pattern in an observation area from information on the intensity of secondary electrons or reflected electrons generated by scanning an incident electron beam in the observation area on a measuring sample, having: a first substrate on which a multiple-layer is laminated and a second substrate with a recess for holding the first substrate, wherein the first substrate is held in the recess of the second substrate so that a normal direction of the multiple-layer surface may be roughly perpendicular to a normal direction of the second substrate surface, and the multiple-layer has a multiple-layer structure of a film containing silicon and a film containing molybdenum.
摘要:
In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要:
In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (1), a deflection control portion (8) which allows an electron beam to scan, a focus control portion (10) and an astigmatism correction portion (3) for the electron beam, an image processing portion (11), and a switching portion (9) which switches scan conditions when obtaining pattern information of the sample (1001) surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.
摘要:
The invention provides a standard component for calibration that enables a calibration position to be easily specified in order to calibrate accurately a scale factor in the electron-beam system, and provides an electron-beam system using it. High-accuracy metrology calibration capable of specifying a calibration position can be realized by forming a mark pattern or labeled material for identifying the calibration position in proximity of a superlattice pattern of the standard component for system calibration. The standard component for calibration is one that calibrates a scale factor of an electron-beam system based on a signal of secondary charged particles detected by irradiation of a primary electron beam emitted from the electron-beam system on a substrate having a cross section of a superlattice of a multi-layer structure in which different materials are deposited alternately. The substrate have linear patterns that are on the substrate surface parallel to the multi-layer and are arranged at a fixed interval in a direction crossing the cross section of the superlattice pattern, and is so configured that the cross sections of the linear patterns may exist on substantially the same plane of the superlattice cross section, so that the linear patterns enable a position of the superlattice pattern to be identified.
摘要:
Disclosed is a standard specimen, used with an electron microscope to correct the magnification with high precision. A standard member used for correction corrects a scanning electron microscope that measures a pattern within an observation region based on information about the secondary electrons generated by scanning incident electron lines on the observation region on a measurement specimen, or information about the reflected electron intensity. The standard member has a first pattern region that corrects the magnification and that comprises a concavo-convex pattern (line/space pattern) in the cross section of a multilayer film that has been laminated, and a second pattern region near the first pattern at almost the same height that does not contain a pattern with the same periodicity as the pattern pitch size of the first region and that is used for beam adjustment.
摘要:
Disclosed is a standard specimen, used with an electron microscope to correct the magnification with high precision. A standard member used for correction corrects a scanning electron microscope that measures a pattern within an observation region based on information about the secondary electrons generated by scanning incident electron lines on the observation region on a measurement specimen, or information about the reflected electron intensity. The standard member has a first pattern region that corrects the magnification and that comprises a concavo-convex pattern (line/space pattern) in the cross section of a multilayer film that has been laminated, and a second pattern region near the first pattern at almost the same height that does not contain a pattern with the same periodicity as the pattern pitch size of the first region and that is used for beam adjustment.