摘要:
In order to provide a communication system which performs a communication while maintaining high voltage insulation, a control circuit which is operated at a low voltage, and a controlled circuit which is operated at a high voltage are connected through a propagation layer having a waveguide structure, thereby performing a communication. In particular, a displacement current (surge current) flows between a high voltage circuit and a low voltage circuit due to a potential fluctuation which occurs in the high voltage circuit A surge current protection circuit is provided, and applying an input which is out of rating to the communication module and the low voltage circuit due to such a surge current is prevented.
摘要:
In order to provide a communication system which performs a communication while maintaining high voltage insulation, a control circuit which is operated at a low voltage, and a controlled circuit which is operated at a high voltage are connected through a propagation layer having a waveguide structure, thereby performing a communication. In particular, a displacement current (surge current) flows between a high voltage circuit and a low voltage circuit due to a potential fluctuation which occurs in the high voltage circuit A surge current protection circuit is provided, and applying of an input which is out of rating to the communication module and the low voltage circuit due to such a surge current is prevented.
摘要:
A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
摘要:
A power inverter using a voltage driven switching element, capable of suppressing an excessive surge voltage which is generated on high-speed switching of IGBTs or MOSFETs, and suppressing radio frequency oscillation after the suppression of the surge voltage. The power inverter includes a switching element rendering a power path conducting and non-conducting, and a speeding-up circuit of a feedback path in an active clamping circuit added to the switching element.
摘要:
A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.
摘要:
A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.
摘要:
The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the latch-up prevention layer lowered in impurity density or removed.
摘要:
A small-sized, low-loss load drive circuit, an integrated circuit for that drive circuit, and an inexpensive plasma display using that integrated circuit. In the load drive circuit that responds to switching commands to supply a high or low voltage to a load by switching, the source-drain voltage of an output-stage n-type MOS transistor of a flip-flop is supplied between the gate and cathode of a main IGBT. In order to hold this voltage, the power source to the flip-flop is supplied from a main power source or a charge pump power circuit connected at the fixed potential point of the main power source. In addition, a discharge prevention circuit and discharge prevention elements and are provided in order that the potential of the power source can be maintained higher than the positive potential of main power source.
摘要:
Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.
摘要:
The invention is intended to provide a control device for a vehicular AC motor, which has higher efficiency of voltage utilization in a power running mode and has higher efficiency of electricity generation in an electricity generation mode. The motor control device comprises rectifying devices and switching devices for three phases, which are connected between a DC power source and armature coils of an AC motor operatively coupled to an internal combustion engine. The motor control device has the inverter function of converting a DC power from the DC power source into an AC power and supplying the AC power to the armature coils, and the converter function of converting an AC power generated by the AC motor into a DC power and supplying the DC power to the DC power source. Rectangular-wave driving control of applying rectangular wave voltages to the armature coils of the AC motor is performed when the AC motor is operated for power running, and synchronous rectification control for making synchronous rectification of the AC power generated by the AC motor is performed when the AC motor is operated for electricity generation.