Communications system
    1.
    发明授权
    Communications system 有权
    通讯系统

    公开(公告)号:US09148232B2

    公开(公告)日:2015-09-29

    申请号:US13885182

    申请日:2010-12-27

    IPC分类号: H04B10/00 H04B10/80 H01P1/30

    CPC分类号: H04B10/808 H01P1/30

    摘要: In order to provide a communication system which performs a communication while maintaining high voltage insulation, a control circuit which is operated at a low voltage, and a controlled circuit which is operated at a high voltage are connected through a propagation layer having a waveguide structure, thereby performing a communication. In particular, a displacement current (surge current) flows between a high voltage circuit and a low voltage circuit due to a potential fluctuation which occurs in the high voltage circuit A surge current protection circuit is provided, and applying an input which is out of rating to the communication module and the low voltage circuit due to such a surge current is prevented.

    摘要翻译: 为了提供一种在保持高电压绝缘的同时进行通信的通信系统,以低电压操作的控制电路和以高电压工作的受控电路通过具有波导结构的传播层连接, 从而进行通信。 特别地,由于在高电压电路A中发生的电位波动,高压电路和低电压电路之间的位移电流(浪涌电流)流动,提供了浪涌电流保护电路,并且施加了超出额定值的输入 防止由于这种浪涌电流引起的通信模块和低电压电路。

    COMMUNICATIONS SYSTEM
    2.
    发明申请
    COMMUNICATIONS SYSTEM 有权
    通信系统

    公开(公告)号:US20130236189A1

    公开(公告)日:2013-09-12

    申请号:US13885182

    申请日:2010-12-27

    IPC分类号: H04B10/80

    CPC分类号: H04B10/808 H01P1/30

    摘要: In order to provide a communication system which performs a communication while maintaining high voltage insulation, a control circuit which is operated at a low voltage, and a controlled circuit which is operated at a high voltage are connected through a propagation layer having a waveguide structure, thereby performing a communication. In particular, a displacement current (surge current) flows between a high voltage circuit and a low voltage circuit due to a potential fluctuation which occurs in the high voltage circuit A surge current protection circuit is provided, and applying of an input which is out of rating to the communication module and the low voltage circuit due to such a surge current is prevented.

    摘要翻译: 为了提供一种在保持高电压绝缘的同时进行通信的通信系统,以低电压操作的控制电路和以高电压操作的受控电路通过具有波导结构的传播层连接, 从而进行通信。 特别地,由于在高电压电路A中发生的电位波动,高压电路和低压电路之间的位移电流(浪涌电流)流动,提供了浪涌电流保护电路, 防止了由于这种浪涌电流引起的通信模块和低压电路的额定值。

    Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device
    3.
    发明申请
    Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device 失效
    用于使用半导体器件驱动等离子体显示器的半导体器件和半导体集成电路器件

    公开(公告)号:US20080265278A1

    公开(公告)日:2008-10-30

    申请号:US12103911

    申请日:2008-04-16

    IPC分类号: H01L29/739 G09G5/00

    摘要: A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.

    摘要翻译: 一种横向IGBT结构,其具有包括两个或更多个用于一个集电极端子的第二导电类型的基底层的发射极端子,其中发射极区域中的第二导电类型的基极层被第一导电类型层覆盖,所述第一导电类型层具有 浓度高于漂移层的浓度,使得覆盖发射极区域的第一导电类型层和掩埋氧化物膜之间的硅层具有降低的电阻,从而增加流向离集电极更远的发射极的电流,从而提高电流密度 。

    Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus
    5.
    发明授权
    Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus 失效
    半导体装置,使用该驱动等离子体显示器的半导体集成电路装置以及等离子体显示装置

    公开(公告)号:US08487343B2

    公开(公告)日:2013-07-16

    申请号:US12825839

    申请日:2010-06-29

    IPC分类号: H01L29/739

    CPC分类号: H01L29/7394 H01L29/0696

    摘要: A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.

    摘要翻译: 形成在SOI衬底上的具有大电流密度的水平型IGBT具有发射极区域,其在氧化物膜沟槽上由二(2)个或更多个第二导电类型的基底层构成 其特征在于,所述发射极区域中的所述第二导电型的基极层被覆盖有比漂移层高的导电性的第一导电型层,所述氧化物膜沟槽上的栅电极的长度为 比集电体上的栅电极的长度小,并且在集电体上形成第二导电类型的基底层下方的第一导电型高密度层,从而实现层间的高密度化 第一导电型,同时保持耐久电压,并增加电流密度。

    SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR USE OF DRIVING PLASMA DISPLAY WITH USING SAME, AND PLASMA DISPLAY APPARATUS
    6.
    发明申请
    SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR USE OF DRIVING PLASMA DISPLAY WITH USING SAME, AND PLASMA DISPLAY APPARATUS 失效
    半导体器件,用于驱动等离子体显示器的半导体集成电路装置以及等离子体显示装置

    公开(公告)号:US20100327315A1

    公开(公告)日:2010-12-30

    申请号:US12825839

    申请日:2010-06-29

    IPC分类号: H01L29/739

    CPC分类号: H01L29/7394 H01L29/0696

    摘要: A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.

    摘要翻译: 形成在SOI衬底上的具有大电流密度的水平型IGBT具有发射极区域,其在氧化物膜沟槽上由二(2)个或更多个第二导电类型的基底层构成 其特征在于,所述发射极区域中的所述第二导电型的基极层被覆盖有比漂移层高的导电性的第一导电型层,所述氧化物膜沟槽上的栅电极的长度为 比集电体上的栅电极的长度小,并且在集电体上形成第二导电类型的基底层下方的第一导电型高密度层,从而实现层间的高密度化 第一导电型,同时保持耐久电压,并增加电流密度。

    Load drive circuit, integrated circuit, and plasma display
    8.
    发明授权
    Load drive circuit, integrated circuit, and plasma display 有权
    负载驱动电路,集成电路和等离子显示

    公开(公告)号:US07586467B2

    公开(公告)日:2009-09-08

    申请号:US11434913

    申请日:2006-05-17

    IPC分类号: G09G3/28

    摘要: A small-sized, low-loss load drive circuit, an integrated circuit for that drive circuit, and an inexpensive plasma display using that integrated circuit. In the load drive circuit that responds to switching commands to supply a high or low voltage to a load by switching, the source-drain voltage of an output-stage n-type MOS transistor of a flip-flop is supplied between the gate and cathode of a main IGBT. In order to hold this voltage, the power source to the flip-flop is supplied from a main power source or a charge pump power circuit connected at the fixed potential point of the main power source. In addition, a discharge prevention circuit and discharge prevention elements and are provided in order that the potential of the power source can be maintained higher than the positive potential of main power source.

    摘要翻译: 小型,低损耗负载驱动电路,用于该驱动电路的集成电路,以及使用该集成电路的便宜的等离子体显示器。 在响应切换命令的负载驱动电路中,通过切换向负载提供高电压或低电压,触发器的输出级n型MOS晶体管的源极 - 漏极电压被提供在栅极和阴极之间 的主要IGBT。 为了保持该电压,触发器的电源从连接在主电源的固定电位点的主电源或电荷泵电源电路提供。 此外,设置放电防止电路和放电防止元件,以使得电源的电位可以保持高于主电源的正电位。

    Motor control device
    10.
    发明申请
    Motor control device 审中-公开
    电机控制装置

    公开(公告)号:US20050001582A1

    公开(公告)日:2005-01-06

    申请号:US10821244

    申请日:2004-04-09

    摘要: The invention is intended to provide a control device for a vehicular AC motor, which has higher efficiency of voltage utilization in a power running mode and has higher efficiency of electricity generation in an electricity generation mode. The motor control device comprises rectifying devices and switching devices for three phases, which are connected between a DC power source and armature coils of an AC motor operatively coupled to an internal combustion engine. The motor control device has the inverter function of converting a DC power from the DC power source into an AC power and supplying the AC power to the armature coils, and the converter function of converting an AC power generated by the AC motor into a DC power and supplying the DC power to the DC power source. Rectangular-wave driving control of applying rectangular wave voltages to the armature coils of the AC motor is performed when the AC motor is operated for power running, and synchronous rectification control for making synchronous rectification of the AC power generated by the AC motor is performed when the AC motor is operated for electricity generation.

    摘要翻译: 本发明旨在提供一种用于车辆AC电动机的控制装置,其在动力运行模式中具有较高的电压利用效率,并且在发电模式中具有较高的发电效率。 电动机控制装置包括三相的整流装置和开关装置,其连接在可操作地耦合到内燃机的AC电动机的直流电源和电枢线圈之间。 电动机控制装置具有将来自直流电源的直流电力转换为交流电力并将交流电力提供给电枢线圈的逆变器功能,并且将由交流电动机产生的交流电力转换成直流电力的转换器功能 并向直流电源提供直流电力。 当交流电动机用于动力运行时,执行向交流电动机的电枢线圈施加矩形波电压的矩形波驱动控制,并且进行用于对由交流电动机产生的交流电力进行同步整流的同步整流控制, 交流电动机用于发电。