PATTERN SHAPE INSPECTION METHOD AND APPARATUS THEREOF
    1.
    发明申请
    PATTERN SHAPE INSPECTION METHOD AND APPARATUS THEREOF 失效
    图案形状检查方法及装置

    公开(公告)号:US20100124370A1

    公开(公告)日:2010-05-20

    申请号:US12620713

    申请日:2009-11-18

    IPC分类号: G06K9/00

    摘要: This invention relates to a pattern shape inspection method and an apparatus thereof for conducting a first step of irradiating wideband illuminating light which contains far ultraviolet light to a sample from a perpendicular direction, inspecting a shape of the pattern based on a spectral waveform of reflecting light detected from the sample, and detecting an edge roughness of the pattern based on the spectral waveform of the reflecting light detected from the sample, and a second step of irradiating a laser beam to the sample from an oblique direction, and detecting the edge roughness of the pattern based on scattered light detected from the sample.

    摘要翻译: 本发明涉及一种图案形状检查方法及其装置,用于进行从垂直方向向样品照射包含远紫外光的宽带照明光的第一步骤,基于反射光的光谱波形检查图案的形状 根据从样品检测的反射光的光谱波形检测图案的边缘粗糙度,以及从倾斜方向照射激光束到样品的第二步骤,并且检测边缘粗糙度 基于从样品检测到的散射光的图案。

    Pattern shape inspection method and apparatus thereof
    3.
    发明授权
    Pattern shape inspection method and apparatus thereof 失效
    图案形状检查方法及装置

    公开(公告)号:US08260029B2

    公开(公告)日:2012-09-04

    申请号:US12620713

    申请日:2009-11-18

    IPC分类号: G06K9/00

    摘要: This invention relates to a pattern shape inspection method and an apparatus thereof for conducting a first step of irradiating wideband illuminating light which contains far ultraviolet light to a sample from a perpendicular direction, inspecting a shape of the pattern based on a spectral waveform of reflecting light detected from the sample, and detecting an edge roughness of the pattern based on the spectral waveform of the reflecting light detected from the sample, and a second step of irradiating a laser beam to the sample from an oblique direction, and detecting the edge roughness of the pattern based on scattered light detected from the sample.

    摘要翻译: 本发明涉及一种图案形状检查方法及其装置,用于进行从垂直方向向样品照射包含远紫外光的宽带照明光的第一步骤,基于反射光的光谱波形检查图案的形状 根据从样品检测的反射光的光谱波形检测图案的边缘粗糙度,以及从倾斜方向照射激光束到样品的第二步骤,并且检测边缘粗糙度 基于从样品检测到的散射光的图案。

    Method and apparatus for inspecting a pattern shape
    4.
    发明授权
    Method and apparatus for inspecting a pattern shape 失效
    用于检查图案形状的方法和装置

    公开(公告)号:US08040772B2

    公开(公告)日:2011-10-18

    申请号:US12425438

    申请日:2009-04-17

    IPC分类号: G11B7/00 G01N21/00

    摘要: An apparatus for inspecting a pattern shape of a magnetic record medium or its stamper includes: a moving mechanism, on which an object to be inspected where a pattern is formed is placed and which moves the object to be inspected in a radial direction while rotating the object; an irradiating optical system that applies illuminating light of a wide band including far ultraviolet light to the object to be inspected moved in the radial direction while rotating the object by the moving mechanism in a polarized state suitable for the object to be inspected from an oblique direction; a detecting optical system that detects zero-order reflected light generated from the object to be inspected irradiated by the irradiating optical system; and a shape inspection unit that inspects a pattern shape formed on the object to be inspected based on a spectral reflectance waveform obtained by dispersing the detected zero-order reflected light, thereby inspecting the pattern shape at a high speed and with high sensitivity.

    摘要翻译: 用于检查磁记录介质或其压模的图案形状的装置包括:移动机构,其上形成有图案的待检查对象,并且沿径向移动被检查物体,同时旋转 目的; 照射光学系统,其将从包括远紫外线的宽带的照明光向受检对象移动,同时通过移动机构以倾斜方向适于被检查对象的偏振状态旋转物体 ; 检测光学系统,其检测由所述照射光学系统照射的待检查物体产生的零级反射光; 以及形状检查单元,其基于通过分散检测到的零级反射光而获得的光谱反射率波形来检查形成在待检查对象上的图案形状,从而以高速和高灵敏度检查图案形状。

    METHOD AND APPARATUS FOR INSPECTING A PATTERN SHAPE
    6.
    发明申请
    METHOD AND APPARATUS FOR INSPECTING A PATTERN SHAPE 失效
    用于检查图案形状的方法和装置

    公开(公告)号:US20090262621A1

    公开(公告)日:2009-10-22

    申请号:US12425438

    申请日:2009-04-17

    IPC分类号: G11B27/36

    摘要: An apparatus for inspecting a pattern shape of a magnetic record medium or its stamper includes: a moving mechanism, on which an object to be inspected where a pattern is formed is placed and which moves the object to be inspected in a radial direction while rotating the object; an irradiating optical system that applies illuminating light of a wide band including far ultraviolet light to the object to be inspected moved in the radial direction while rotating the object by the moving mechanism in a polarized state suitable for the object to be inspected from an oblique direction; a detecting optical system that detects zero-order reflected light generated from the object to be inspected irradiated by the irradiating optical system; and a shape inspection unit that inspects a pattern shape formed on the object to be inspected based on a spectral reflectance waveform obtained by dispersing the detected zero-order reflected light, thereby inspecting the pattern shape at a high speed and with high sensitivity.

    摘要翻译: 用于检查磁记录介质或其压模的图案形状的装置包括:移动机构,其上形成有图案的待检查对象,并且沿径向移动被检查物体,同时旋转 目的; 照射光学系统,其将从包括远紫外线的宽带的照明光向受检对象移动,同时通过移动机构以倾斜方向适于被检查对象的偏振状态旋转物体 ; 检测光学系统,其检测由所述照射光学系统照射的待检查物体产生的零级反射光; 以及形状检查单元,其基于通过分散检测到的零级反射光而获得的光谱反射率波形来检查形成在待检查对象上的图案形状,从而以高速和高灵敏度检查图案形状。

    Method and apparatus for measuring thickness of thin film and device manufacturing method using same
    8.
    发明授权
    Method and apparatus for measuring thickness of thin film and device manufacturing method using same 失效
    用于测量薄膜厚度的方法和装置及使用该薄膜的器件制造方法

    公开(公告)号:US07119908B2

    公开(公告)日:2006-10-10

    申请号:US10082430

    申请日:2002-02-22

    IPC分类号: G01B11/02

    摘要: A manufacturing method and manufacturing device for high-precision thin film devices is disclosed, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during a CMP process without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. Film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution. The film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized. Accordingly, a high-precision semiconductor device can be manufactured.

    摘要翻译: 公开了一种用于高精度薄膜器件的制造方法和制造装置,其中在CMP处理期间以高精度测量透明膜的膜厚度和膜厚度分布,而不受LSI之间的膜厚度分布的影响 区域或通过CMP处理产生的半导体晶片表面内。 根据来自透明膜的反射光的光谱波形的特征量,例如反射强度,频谱强度等,通过指定相对水平的测量区域来测量膜厚度,从而允许对膜的高精度控制 厚度。 可以根据膜厚分布优化CMP加工中的流平过程。 也可以优化膜沉积阶段的成膜条件和蚀刻阶段的蚀刻条件。 因此,可以制造高精度半导体器件。

    METHOD AND DEVICE FOR DETECTING SHAPE OF SURFACE OF MEDIUM
    9.
    发明申请
    METHOD AND DEVICE FOR DETECTING SHAPE OF SURFACE OF MEDIUM 有权
    用于检测中等表面形状的方法和装置

    公开(公告)号:US20100085855A1

    公开(公告)日:2010-04-08

    申请号:US12482125

    申请日:2009-06-10

    IPC分类号: G11B27/36

    摘要: A defect generated during a nano-imprint process is inspected by a scatterometry method. The scatterometry method is to illuminate the surface of a medium with light having a plurality of wave lengths by means of a first illuminator through a half mirror and an objective lens and cause light reflected on the medium to be incident on a spectrometer through the objective lens and the half mirror. A second illuminator illuminates a foreign material or scratch on the surface of the medium from an oblique direction with respect to the surface of the medium. Light is scattered from the foreign material or scratch and detected by first and second detectors. The first detector is placed in a direction defining a first elevation angle with the surface of the medium. The second detector is placed in a direction defining a second elevation angle with the surface of the medium. When coordinates of a defect that are obtained by the scatterometry method match coordinates of the foreign material or scratch, an inspection device determines that the defect is not generated during the nano-imprint process. When the matching is negative, the inspection device determines that the defect is generated during the nano-imprint process.

    摘要翻译: 在纳米压印过程中产生的缺陷通过散射法进行检查。 散射方法是通过半反射镜和物镜通过第一照明器照亮具有多个波长的光的介质的表面,并使介质上反射的光通过物镜入射到光谱仪上 和半反射镜。 第二个照明器相对于介质的表面从倾斜的方向照射介质表面上的异物或划痕。 光从异物或划痕散射并由第一和第二检测器检测。 第一检测器被放置在与介质表面限定第一仰角的方向上。 第二检测器被放置在与介质表面限定第二仰角的方向上。 当通过散射测定方法获得的缺陷的坐标与异物或划痕的坐标匹配时,检查装置确定在纳米压印过程中不产生缺陷。 当匹配为负时,检查装置确定在纳米压印过程中产生缺陷。

    Method and apparatus for measuring thickness of thin film and device manufacturing method using same
    10.
    发明申请
    Method and apparatus for measuring thickness of thin film and device manufacturing method using same 失效
    用于测量薄膜厚度的方法和装置及使用该薄膜的器件制造方法

    公开(公告)号:US20050117164A1

    公开(公告)日:2005-06-02

    申请号:US10082430

    申请日:2002-02-22

    摘要: The present invention provides a manufacturing method and manufacturing device for high-precision thin film devices, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during processing, and the film thickness can be controlled with high precision during CMP processing, by accurately measuring the film thickness of the uppermost layer, without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. The field of view and measurement position used for measuring the film thickness of a transparent film during processing are set such that the measured area is not affected by the film thickness distribution of the actual device patterns subjected to CMP processing. Moreover, the film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. Consequently, the leveling process in CMP processing can be optimized on the basis of the film thickness distribution, the film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized, and hence a high-precision semiconductor device can be manufactured.

    摘要翻译: 本发明提供了一种用于高精度薄膜器件的制造方法和制造装置,由此在加工期间以高精度测量透明膜的膜厚度和膜厚度分布,并且可以高度控制膜厚度 通过精确地测量最上层的膜厚度,而不受LSI区域之间的膜厚分布或由CMP处理产生的半导体晶片表面内的膜厚分布的影响,在CMP处理期间的精度。 设置用于测量处理过程中透明膜的膜厚度的视场和测量位置,使得测量面积不受经过CMP处理的实际器件图案的膜厚度分布的影响。 此外,根据来自透明膜的反射光的光谱波形的特征量,例如反射强度,频谱强度等,通过指定相对水平的测量区域来测量膜厚度,由此允许高精度 控制膜厚度。 因此,可以基于膜厚分布,成膜阶段中的成膜条件和蚀刻阶段的蚀刻条件来优化CMP处理中的流平处理,并且因此可以优化高精度半导体器件 可以制造。