公开(公告)号：US08411928B2

公开(公告)日：2013-04-02

申请号：US12482126

申请日：2009-06-10

申请人： Hideaki Sasazawa ,  Takenori Hirose ,  Minoru Yoshida ,  Keiya Saito ,  Shigeru Serikawa

发明人： Hideaki Sasazawa ,  Takenori Hirose ,  Minoru Yoshida ,  Keiya Saito ,  Shigeru Serikawa

IPC分类号： G06K9/00

CPC分类号： G11B5/746 ,  G01B11/24 ,  G01N21/8851 ,  G01N21/956 ,  G11B5/855

摘要： An inspection region is specified using the design information to perform region division for measurement through a scatterometry method. The obtained detection data is classified by pattern into a periodic region and a non-periodic region. A spectroscopic characteristic is detected by an optical sensor to extract features. The extracted features are compared with features stored in a feature map database for each region to evaluate a state of a patterned medium.

摘要翻译： 使用设计信息指定检查区域，以通过散射法进行测量的区域划分。 所获得的检测数据通过图案分类为周期性区域和非周期性区域。 通过光学传感器检测光谱特性以提取特征。 将提取的特征与存储在每个区域的特征图数据库中的特征进行比较，以评估图案化介质的状态。

公开(公告)号：US20100098320A1

公开(公告)日：2010-04-22

申请号：US12482126

申请日：2009-06-10

申请人： Hideaki SASAZAWA ,  Takenori Hirose ,  Minoru Yoshida ,  Keiya Saito ,  Shigeru Serikawa

发明人： Hideaki SASAZAWA ,  Takenori Hirose ,  Minoru Yoshida ,  Keiya Saito ,  Shigeru Serikawa

IPC分类号： G06K9/00

CPC分类号： G11B5/746 ,  G01B11/24 ,  G01N21/8851 ,  G01N21/956 ,  G11B5/855

摘要： An inspection region is specified using the design information to perform region division for measurement through a scatterometry method. The obtained detection data is classified by pattern into a periodic region and a non-periodic region. A spectroscopic characteristic is detected by an optical sensor to extract features. The extracted features are compared with features stored in a feature map database for each region to evaluate a state of a patterned medium.

摘要翻译： 使用设计信息指定检查区域，以通过散射法进行测量的区域划分。 所获得的检测数据通过图案分类为周期性区域和非周期性区域。 通过光学传感器检测光谱特性以提取特征。 将提取的特征与存储在每个区域的特征图数据库中的特征进行比较，以评估图案化介质的状态。

公开(公告)号：US08040772B2

公开(公告)日：2011-10-18

申请号：US12425438

申请日：2009-04-17

申请人： Keiya Saito ,  Takenori Hirose ,  Hideaki Sasazawa

发明人： Keiya Saito ,  Takenori Hirose ,  Hideaki Sasazawa

IPC分类号： G11B7/00 ,  G01N21/00

CPC分类号： G11B27/36 ,  B82Y10/00 ,  G01N21/9506 ,  G01N21/95607 ,  G01N2021/945 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  G11B5/865 ,  G11B2220/2516

摘要： An apparatus for inspecting a pattern shape of a magnetic record medium or its stamper includes: a moving mechanism, on which an object to be inspected where a pattern is formed is placed and which moves the object to be inspected in a radial direction while rotating the object; an irradiating optical system that applies illuminating light of a wide band including far ultraviolet light to the object to be inspected moved in the radial direction while rotating the object by the moving mechanism in a polarized state suitable for the object to be inspected from an oblique direction; a detecting optical system that detects zero-order reflected light generated from the object to be inspected irradiated by the irradiating optical system; and a shape inspection unit that inspects a pattern shape formed on the object to be inspected based on a spectral reflectance waveform obtained by dispersing the detected zero-order reflected light, thereby inspecting the pattern shape at a high speed and with high sensitivity.

摘要翻译： 用于检查磁记录介质或其压模的图案形状的装置包括：移动机构，其上形成有图案的待检查对象，并且沿径向移动被检查物体，同时旋转 目的; 照射光学系统，其将从包括远紫外线的宽带的照明光向受检对象移动，同时通过移动机构以倾斜方向适于被检查对象的偏振状态旋转物体 ; 检测光学系统，其检测由所述照射光学系统照射的待检查物体产生的零级反射光; 以及形状检查单元，其基于通过分散检测到的零级反射光而获得的光谱反射率波形来检查形成在待检查对象上的图案形状，从而以高速和高灵敏度检查图案形状。

公开(公告)号：US08260029B2

公开(公告)日：2012-09-04

申请号：US12620713

申请日：2009-11-18

申请人： Keiya Saito ,  Hideaki Sasazawa ,  Takenori Hirose

发明人： Keiya Saito ,  Hideaki Sasazawa ,  Takenori Hirose

IPC分类号： G06K9/00

CPC分类号： G06K9/4661 ,  G06T7/0004 ,  G06T2207/10152

摘要： This invention relates to a pattern shape inspection method and an apparatus thereof for conducting a first step of irradiating wideband illuminating light which contains far ultraviolet light to a sample from a perpendicular direction, inspecting a shape of the pattern based on a spectral waveform of reflecting light detected from the sample, and detecting an edge roughness of the pattern based on the spectral waveform of the reflecting light detected from the sample, and a second step of irradiating a laser beam to the sample from an oblique direction, and detecting the edge roughness of the pattern based on scattered light detected from the sample.

摘要翻译： 本发明涉及一种图案形状检查方法及其装置，用于进行从垂直方向向样品照射包含远紫外光的宽带照明光的第一步骤，基于反射光的光谱波形检查图案的形状 根据从样品检测的反射光的光谱波形检测图案的边缘粗糙度，以及从倾斜方向照射激光束到样品的第二步骤，并且检测边缘粗糙度 基于从样品检测到的散射光的图案。

公开(公告)号：US07119908B2

公开(公告)日：2006-10-10

申请号：US10082430

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： G01B11/02

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： A manufacturing method and manufacturing device for high-precision thin film devices is disclosed, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during a CMP process without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. Film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution. The film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized. Accordingly, a high-precision semiconductor device can be manufactured.

摘要翻译： 公开了一种用于高精度薄膜器件的制造方法和制造装置，其中在CMP处理期间以高精度测量透明膜的膜厚度和膜厚度分布，而不受LSI之间的膜厚度分布的影响 区域或通过CMP处理产生的半导体晶片表面内。 根据来自透明膜的反射光的光谱波形的特征量，例如反射强度，频谱强度等，通过指定相对水平的测量区域来测量膜厚度，从而允许对膜的高精度控制 厚度。 可以根据膜厚分布优化CMP加工中的流平过程。 也可以优化膜沉积阶段的成膜条件和蚀刻阶段的蚀刻条件。 因此，可以制造高精度半导体器件。

公开(公告)号：US07057744B2

公开(公告)日：2006-06-06

申请号：US10082520

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： G01B11/28

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： A method for high-precision measurement of film thickness and the distribution of film thickness of a transparent film is disclosed. The method is performed during a CMP process, without being affected by the film thickness distribution among the LSI regions or on the semiconductor wafer surface. The film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity. This permits highly accurate control of film thickness. The leveling process in CMP processing can be optimized on the basis of the film thickness distribution.

公开(公告)号：US20050117164A1

公开(公告)日：2005-06-02

申请号：US10082430

申请日：2002-02-22

申请人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

发明人： Mineo Nomoto ,  Takenori Hirose ,  Keiya Saito

IPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/06 ,  G01N21/84 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  G01B9/02

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/8422

摘要： The present invention provides a manufacturing method and manufacturing device for high-precision thin film devices, whereby the film thickness and film thickness distribution of a transparent film is measured to a high degree of accuracy during processing, and the film thickness can be controlled with high precision during CMP processing, by accurately measuring the film thickness of the uppermost layer, without being affected by the film thickness distribution between LSI regions or within the semiconductor wafer surface generated by CMP processing. The field of view and measurement position used for measuring the film thickness of a transparent film during processing are set such that the measured area is not affected by the film thickness distribution of the actual device patterns subjected to CMP processing. Moreover, the film thickness is measured by specifying relatively level measurement regions, according to a characteristic quantity of the spectral waveform of the reflected light from the transparent film, such as the reflection intensity, frequency spectrum intensity, or the like, thereby permitting highly accurate control of film thickness. Consequently, the leveling process in CMP processing can be optimized on the basis of the film thickness distribution, the film deposition conditions in the film deposition stage and the etching conditions in the etching stage can also be optimized, and hence a high-precision semiconductor device can be manufactured.

摘要翻译： 本发明提供了一种用于高精度薄膜器件的制造方法和制造装置，由此在加工期间以高精度测量透明膜的膜厚度和膜厚度分布，并且可以高度控制膜厚度 通过精确地测量最上层的膜厚度，而不受LSI区域之间的膜厚分布或由CMP处理产生的半导体晶片表面内的膜厚分布的影响，在CMP处理期间的精度。 设置用于测量处理过程中透明膜的膜厚度的视场和测量位置，使得测量面积不受经过CMP处理的实际器件图案的膜厚度分布的影响。 此外，根据来自透明膜的反射光的光谱波形的特征量，例如反射强度，频谱强度等，通过指定相对水平的测量区域来测量膜厚度，由此允许高精度 控制膜厚度。 因此，可以基于膜厚分布，成膜阶段中的成膜条件和蚀刻阶段的蚀刻条件来优化CMP处理中的流平处理，并且因此可以优化高精度半导体器件 可以制造。

公开(公告)号：US5116782A

公开(公告)日：1992-05-26

申请号：US455155

申请日：1989-12-22

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Tateoki Miyauchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Tateoki Miyauchi

IPC分类号： B82B3/00 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  B82Y99/00 ,  C23F4/00 ,  G01N37/00 ,  G01Q30/04 ,  G01Q30/20 ,  G01Q60/10 ,  G01Q80/00 ,  G03F1/00 ,  G03F1/68 ,  G03F1/72 ,  G11B9/00 ,  G11B9/14 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

CPC分类号： C23C16/45544 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C16/047 ,  C23C16/45536 ,  G03F1/86 ,  G11B9/14 ,  H01J37/3056 ,  H01L21/30 ,  B82Y10/00 ,  Y10S148/045 ,  Y10S977/855 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/859 ,  Y10S977/869 ,  Y10S977/875

摘要： A method and apparatus for processing a fine pattern of a sample of one of an electronic device, molecular device and bioelement device, wherein a needle having a sharpened tip is disposed in opposed relation to the sample with a gap therebetween. A voltage is applied between the needle and the sample so as to enable a tunnel current and/or a field emission current to flow therebetween and the fine pattern is provided to correct the fine pattern by effecting at least one of removal, repositioning, annealing and film formation of at least one of individual atoms and individual molecules.

公开(公告)号：US5497034A

公开(公告)日：1996-03-05

申请号：US318267

申请日：1994-10-05

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40 ,  H01L29/46

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

公开(公告)号：US4654583A

公开(公告)日：1987-03-31

申请号：US600957

申请日：1984-04-16

申请人： Takanori Ninomiya ,  Yasuo Nakagawa ,  Keiya Saito

发明人： Takanori Ninomiya ,  Yasuo Nakagawa ,  Keiya Saito

IPC分类号： G01N21/956 ,  G06T7/00 ,  G01R15/12 ,  G01B11/00

CPC分类号： G06T7/0006 ,  G01N21/956 ,  G06T2207/30141

摘要： A printed circuit pattern inspection system, in which the optical image of circuit patterns is transformed into an electrical signal, the signal is converted into a binary digital signal, the connectivity relationship between selected two points of pattern in the form of binary signal is examined, connection data representative of the connectivity relationship and expressed by a pair of numbers given to the points is generated, and the connection data is compared with design data which is produced from design information and expressed in the form of a circulation list of numbers given to points in linkage relationship, whereby determination of defectiveness of patterns is made basing on the result of comparison.

摘要翻译： 一种印刷电路图形检查系统，其中电路图案的光学图像被变换为电信号，该信号被转换为二进制数字信号，检查二进制信号形式的所选择的两个点之间的连接关系， 连接数据表示连接关系，并且由给予点的一对数字表示，并将连接数据与从设计信息产生的设计数据进行比较，并以给定给点的数字的循环列表的形式表示 在连接关系中，由此根据比较结果确定图案的缺陷。