公开(公告)号：US06551400B2

公开(公告)日：2003-04-22

申请号：US09816389

申请日：2001-03-26

申请人： Keizo Hasbe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

发明人： Keizo Hasbe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

IPC分类号： B05C502

CPC分类号： G03F7/162 ,  B05C11/08

摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

摘要翻译： 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。 因此，处理空间被溶剂雾填满。 在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。

公开(公告)号：US06228561B1

公开(公告)日：2001-05-08

申请号：US08791618

申请日：1997-01-31

申请人： Keizo Hasebe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

发明人： Keizo Hasebe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

IPC分类号： G03F716

CPC分类号： G03F7/162 ,  B05C11/08

摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

摘要翻译： 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。 因此，处理空间被溶剂雾填满。 在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。

公开(公告)号：US06503003B2

公开(公告)日：2003-01-07

申请号：US09816233

申请日：2001-03-26

申请人： Keizo Hasebe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

发明人： Keizo Hasebe ,  Shuuichi Nishikido ,  Nobuo Konishi ,  Takayuki Toshima ,  Kazutoshi Yoshioka

IPC分类号： G03D504

CPC分类号： G03F7/162 ,  B05C11/08

摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

摘要翻译： 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。 因此，处理空间被溶剂雾填满。 在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。

公开(公告)号：US06656273B1

公开(公告)日：2003-12-02

申请号：US09593948

申请日：2000-06-15

申请人： Takayuki Toshima ,  Nobuo Konishi ,  Yoji Mizutani

发明人： Takayuki Toshima ,  Nobuo Konishi ,  Yoji Mizutani

IPC分类号： B05C914

CPC分类号： H01L21/67178 ,  H01L21/6715

摘要： In an organic insulating film coating apparatus, an organic insulating film is applied onto a wafer by a spin coating. Thereafter, the wafer is subjected to heat processing and an inorganic insulating film is applied onto the wafer by a spin coating in an inorganic insulating film coating apparatus. After the coating of the inorganic insulating film, the wafer is subjected to aging processing and exchange-chemical coating processing. Thereafter, a solvent in the coating film is removed in a low-temperature heat processing apparatus and a low-oxygen and high-temperature heat processing apparatus, and thermal processing is performed for the wafer in a low-oxygen curing and cooling processing apparatus. The low-temperature heat processing apparatus, the low-oxygen and high-temperature heat processing apparatus, a delivery section for the wafer between the low-temperature heat processing apparatus and the low-oxygen and high-temperature heat processing apparatus, and a delivery section for the wafer between the low-oxygen and high-temperature heat processing apparatus and the low-oxygen curing and cooling processing apparatus are brought to low-oxygen atmospheres.

摘要翻译： 在有机绝缘膜涂覆装置中，通过旋涂将有机绝缘膜施加到晶片上。 此后，对晶片进行热处理，并且通过无机绝缘膜涂覆设备中的旋涂将无机绝缘膜施加到晶片上。 在无机绝缘膜的涂覆之后，对晶片进行老化处理和交换化学涂覆处理。 然后，在低温热处理装置和低氧高温加热装置中除去涂膜中的溶剂，在低氧固化和冷却处理装置中对晶片进行热处理。 低温热处理装置，低氧高温加热装置，低温加热装置与低氧高温加热装置之间的晶片输送部，输送部 在低氧和高温热处理装置和低氧固化和冷却处理装置之间的晶片的截面被带到低氧气氛。

公开(公告)号：US06257778B1

公开(公告)日：2001-07-10

申请号：US09243136

申请日：1999-02-03

申请人： Takayuki Toshima ,  Nobuo Konishi

发明人： Takayuki Toshima ,  Nobuo Konishi

IPC分类号： G03D500

CPC分类号： G03F7/32 ,  G03F7/3021

摘要： When the surface of a substrate is developed, a developing solution in low state of development function is supplied to the surface of the substrate. Thereafter, the development function of the supplied developing solution is improved. Thus, the surface of the substrate is developed. When the developing solution is supplied to the surface of the substrate, the developing solution does not develop the surface of the substrate. Thus, even if there is a time lag of the developing solution supplied on the surface, the surface of the substrate is equally developed.

摘要翻译： 当显影衬底的表面时，将显影功能低的显影溶液供应到衬底的表面。 此后，提供的显影液的显影功能得到改善。 因此，显影衬底的表面。 当将显影液供给到基板的表面时，显影液不会形成基板的表面。 因此，即使在表面上提供的显影溶液存在时间滞后，基板的表面也同样显影。

公开(公告)号：US6143478A

公开(公告)日：2000-11-07

申请号：US81016

申请日：1998-05-19

申请人： Takayuki Toshima ,  Nobuo Konishi

发明人： Takayuki Toshima ,  Nobuo Konishi

IPC分类号： H01L21/027 ,  G03F7/16 ,  G03F7/40

CPC分类号： G03F7/168

摘要： A resist processing method includes (a), to a substrate having a circuit pattern with an uneven surface formed thereon, coating a photoresist solution to, by doing so, form a photoresist film, (b) subjecting the substrate to heat processing to cause a portion of the photoresist film to be chemically modified to create a modified resist layer of a substantially uniform thickness from the uneven surface of the circuit pattern, and (c) selectively removing only a resist portion unmodified at the step (b) to leave a modified resist layer on the uneven surface of the circuit pattern.

摘要翻译： 抗蚀剂处理方法包括：（a）对具有形成在其上的不平坦表面的电路图案的基板，通过涂布光致抗蚀剂溶液，形成光致抗蚀剂膜，（b）对基板进行加热处理，使 光致抗蚀剂膜的部分被化学改性以从电路图案的不平坦表面形成具有基本均匀厚度的改性抗蚀剂层，以及（c）仅在步骤（b）仅选择性地除去未修饰的抗蚀剂部分，以留下经修饰的 抗蚀剂层在电路图案的不平坦表面上。

公开(公告)号：US06491452B2

公开(公告)日：2002-12-10

申请号：US09832205

申请日：2001-04-11

申请人： Nobuo Konishi ,  Takayuki Toshima ,  Tsutae Omori

发明人： Nobuo Konishi ,  Takayuki Toshima ,  Tsutae Omori

IPC分类号： G03D500

CPC分类号： G03F7/32 ,  G03F7/3014 ,  G03F7/3021

摘要： When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

摘要翻译： 当形成在基板上的抗蚀剂膜以预定图案曝光，然后曝光图案显影时，将能够降低显影液流动性的物质加入显影液中，引起添加物质的显影液 在预定条件下变成低流体，将显影液施加到基板上暴露的抗蚀剂膜上，然后给显影液赋予预定的触发剂，使显影液变成高流体，以使显影 进步。 因此，可以使线宽度均匀，并且在显影溶液的涂布期间不会发生缺陷。

公开(公告)号：US06238848B1

公开(公告)日：2001-05-29

申请号：US09539378

申请日：2000-03-31

申请人： Nobuo Konishi ,  Takayuki Toshima ,  Tsutae Omori

发明人： Nobuo Konishi ,  Takayuki Toshima ,  Tsutae Omori

IPC分类号： G03F730

CPC分类号： G03F7/32 ,  G03F7/3014 ,  G03F7/3021

摘要： When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

公开(公告)号：US06514073B1

公开(公告)日：2003-02-04

申请号：US09667604

申请日：2000-09-22

申请人： Takayuki Toshima ,  Nobuo Konishi

发明人： Takayuki Toshima ,  Nobuo Konishi

IPC分类号： F27D1502

CPC分类号： G03F7/168

摘要： A resist processing method includes (a), to a substrate having a circuit pattern with an uneven surface formed thereon, coating a photoresist solution to, by doing so, form a photoresist film, (b) subjecting the substrate to heat processing to cause a portion of the photoresist film to be chemically modified to create a modified resist layer of a substantially uniform thickness from the uneven surface of the circuit pattern, and (c) selectively removing only a resist portion unmodified at the step (b) to leave a modified resist layer on the uneven surface of the circuit pattern.

摘要翻译： 抗蚀剂处理方法包括：（a）对具有形成在其上的不平坦表面的电路图案的基板，通过涂布光致抗蚀剂溶液，形成光致抗蚀剂膜，（b）对基板进行加热处理，使 光致抗蚀剂膜的部分被化学改性以从电路图案的不平坦表面形成具有基本均匀厚度的改性抗蚀剂层，以及（c）仅在步骤（b）仅选择性地除去未修饰的抗蚀剂部分，以留下经修饰的 抗蚀剂层在电路图案的不平坦表面上。

公开(公告)号：US07300598B2

公开(公告)日：2007-11-27

申请号：US10812102

申请日：2004-03-30

申请人： Nobuo Konishi ,  Takayuki Toshima ,  Takehiko Orii

发明人： Nobuo Konishi ,  Takayuki Toshima ,  Takehiko Orii

IPC分类号： B44C1/22 ,  B08B3/00 ,  B08B3/08

CPC分类号： H01L21/6708 ,  B08B3/024 ,  H01L21/67051

摘要： The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.

摘要翻译： 本发明涉及一种包括在基材上的化学液体处理和漂洗液处理的方法，更具体地涉及一种在实现均匀的工艺并防止颗粒产生的同时减少化学液体的消耗的技术。 在具体实施例中，执行用于去除形成在硅晶片上的氧化硅膜的工艺。 该方法包括三个随后执行的步骤，其中（1）稀释的氢氟酸（DHF），（2）DHF和去离子水（DIW），（3）DIW分别供应到旋转的晶片上。 在亲水性氧化硅膜溶解之前立即进行从步骤（1）到步骤（2）的转变，以露出下面的疏水硅层。