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公开(公告)号：US20080211569A1
公开(公告)日：2008-09-04
申请号：US11712726
申请日：2007-03-01
IPC分类号： H03K17/687
CPC分类号： H03K17/6874 , H03K17/102 , H03K19/00315 , H03K2217/0018
摘要： A higher voltage switching circuit based on a standard process limits the lowest applied voltage to an intermediate voltage between the higher voltage and ground, instead of ground. In this way, the maximum electric field across the gate dielectric is greatly reduced. In additional the use of p-type triple well also reduces junction breakdown in some embodiments. This concept is also valid in the case where the high voltage is negative, in which case the intermediate voltage is also negative.
摘要翻译： 基于标准工艺的较高电压开关电路将最低施加电压限制在较高电压和地之间的中间电压，而不是接地。 以这种方式，大大减少了栅极电介质两端的最大电场。 另外，在一些实施例中，p型三重阱的使用也减少了结击穿。 这个概念在高电压为负的情况下也是有效的，在这种情况下中间电压也是负的。
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公开(公告)号：US06069825A
公开(公告)日：2000-05-30
申请号：US154062
申请日：1998-09-16
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
摘要： A self-decoding charge pump for charging word lines or bit lines of a semiconductor memory array such as an EEPROM includes a passive, parallel-plate ONO capacitor for coupling voltage pulses generated by an oscillator to a charge transfer node. The voltage pulses received at the charge transfer node control the transfer of increments of charge from a high-voltage generator to a selected word line. Large-area capacitive coupling may be used without causing significant carrier injection into the substrate. In one configuration exploiting the floating-gate EEPROM semiconductor geometry, plural stacked capacitors are used, allowing a doubling of the capacitance per surface area relative to a single-capacitor configuration. Plural oscillators generating lower-amplitude signals can be used with one high-voltage generator.
摘要翻译： 用于对诸如EEPROM的半导体存储器阵列的字线或位线进行充电的自解码电荷泵包括用于将由振荡器产生的电压脉冲耦合到电荷转移节点的无源平行板ONO电容器。 在电荷转移节点处接收的电压脉冲控制从高电压发生器到选定字线的电荷增量的传递。 可以使用大面积的电容耦合而不会引起明显的载流子注入基片。 在利用浮置栅极EEPROM半导体几何形状的一种配置中，使用多个叠层电容器，允许相对于单电容器配置的每个表面积的电容加倍。 产生低振幅信号的多个振荡器可以与一个高压发生器一起使用。
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公开(公告)号：US07116587B2
公开(公告)日：2006-10-03
申请号：US10869085
申请日：2004-06-16
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
IPC分类号： G11C5/14
摘要： A depletion type active capacitor may transfer charge from an oscillator to an address line that needs to be boosted for programming. Such a charge pump may be useful in semiconductor memories such as flash memories, EEPROM memories, and NAND EEPROM memories. In some embodiments, relatively low supply voltages can be boosted.
摘要翻译： 耗尽型有源电容器可将电荷从振荡器传送到需要升压的编程地址线。 这样的电荷泵可用于诸如闪速存储器，EEPROM存储器和NAND EEPROM存储器的半导体存储器中。 在一些实施例中，可以提高相对低的电源电压。
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公开(公告)号：US07428176B2
公开(公告)日：2008-09-23
申请号：US11541885
申请日：2006-10-02
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
IPC分类号： G11C5/14
摘要： A depletion type active capacitor may transfer charge from an oscillator to an address line that needs to be boosted for programming. Such a charge pump may be useful in semiconductor memories such as flash memories, EEPROM memories, and NAND EEPROM memories. In some embodiments, relatively low supply voltages can be boosted.
摘要翻译： 耗尽型有源电容器可将电荷从振荡器传送到需要升压的编程地址线。 这样的电荷泵可用于诸如闪速存储器，EEPROM存储器和NAND EEPROM存储器的半导体存储器中。 在一些实施例中，可以提高相对低的电源电压。
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公开(公告)号：US20050281093A1
公开(公告)日：2005-12-22
申请号：US10869085
申请日：2004-06-16
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
摘要： A depletion type active capacitor may transfer charge from an oscillator to an address line that needs to be boosted for programming. Such a charge pump may be useful in semiconductor memories such as flash memories, EEPROM memories, and NAND EEPROM memories. In some embodiments, relatively low supply voltages can be boosted.
摘要翻译： 耗尽型有源电容器可将电荷从振荡器传送到需要升压的编程地址线。 这样的电荷泵可用于诸如闪速存储器，EEPROM存储器和NAND EEPROM存储器的半导体存储器中。 在一些实施例中，可以提高相对低的电源电压。
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公开(公告)号：US20070025165A1
公开(公告)日：2007-02-01
申请号：US11541885
申请日：2006-10-02
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
摘要： A depletion type active capacitor may transfer charge from an oscillator to an address line that needs to be boosted for programming. Such a charge pump may be useful in semiconductor memories such as flash memories, EEPROM memories, and NAND EEPROM memories. In some embodiments, relatively low supply voltages can be boosted.
摘要翻译： 耗尽型有源电容器可将电荷从振荡器传送到需要升压的编程地址线。 这样的电荷泵可用于诸如闪速存储器，EEPROM存储器和NAND EEPROM存储器的半导体存储器中。 在一些实施例中，可以提高相对低的电源电压。
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公开(公告)号：US06788578B1
公开(公告)日：2004-09-07
申请号：US10351779
申请日：2003-01-27
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
IPC分类号： G11C1604
摘要： A self-decoding charge pump for charging conductive lines (word lines or bit lines) of a semiconductor programmable memory array such as an EEPROM includes: oscillator output capacitive coupling circuitry connecting an oscillator output to a first control node corresponding to a selected conductive line, for capacitively coupling voltage pulses from the oscillator output to the first control node while the conductive line is selected; control selective charge transfer circuitry connecting a high voltage source to a second control node through the first control node, for selectively transferring charge increments from the high-voltage source to the second control node while the conductive line is selected; conductive line charging control circuitry connecting the high voltage source to the conductive line and responsive to the second control node, for selectively transferring charge from the high voltage source to the conductive line while the conductive line is selected; and conductive line isolation circuitry connecting the conductive line to the second control node, for selectively charging the second control node from the conductive line while the conductive line is selected, and for preventing a charging of the conductive line from the second control node. The conductive line isolation device allows decoupling the pumping efficiency of the charge pump from the capacitance of the conductive line to be charged. The efficiency of the pump depends on the capacitance of the second control node (a primary pump output), rather than the capacitance of the conductive line itself (a secondary pump output). Since the second control node can have a much lower capacitance than the conductive line, the described charge pumps allow substantially improved pumping efficiencies.
摘要翻译： 用于对诸如EEPROM的半导体可编程存储器阵列的导线（字线或位线）充电的自解码电荷泵包括：振荡器输出电容耦合电路，其将振荡器输出连接到对应于所选导线的第一控制节点， 用于在选择导线时电容耦合从振荡器输出到第一控制节点的电压脉冲; 控制通过所述第一控制节点将高电压源连接到第二控制节点的选择性电荷转移电路，用于在选择所述导线时选择性地将电荷增量从所述高电压源转移到所述第二控制节点; 导电线路充电控制电路，其将所述高压源连接到所述导线并且响应于所述第二控制节点，用于在选择所述导线时选择性地将电荷从所述高电压源传输到所述导电线; 以及导线隔离电路，其将导线连接到第二控制节点，用于在选择导线时从导线选择性地对第二控制节点充电，并且用于防止导线从第二控制节点的充电。 导线隔离装置允许将电荷泵的泵送效率与待充电的导线的电容分离。 泵的效率取决于第二控制节点（主泵输出）的电容，而不是导线本身的电容（次泵输出）。 由于第二控制节点可以具有比导电线低得多的电容，所以描述的电荷泵允许显着提高的泵送效率。
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公开(公告)号：US20140014714A1
公开(公告)日：2014-01-16
申请号：US13546460
申请日：2012-07-11
申请人： Kam-Fai Tang
发明人： Kam-Fai Tang
CPC分类号： B65D25/205 , B65D2203/06
摘要： Two pieces of identification, one is publicly accessible and the other is privately retrievable, together with a closed-loop Internet enabled computer system, provide a product authentication system for general consumer products. Barcodes and smartcards are used on the identifications as described in the application whereas other forms of identifications are also suitable.
摘要翻译： 两个身份识别，一个是可公开访问的，另一个是可私自检索的，以及一个闭环互联网计算机系统，为一般消费者产品提供产品认证系统。 条形码和智能卡被用于应用程序中描述的标识，而其他形式的标识也是合适的。
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