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    Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
    7.
    发明授权
    Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 有权
    含有氮化钽碳氮化物阻挡膜的半导体器件及其形成方法

    公开(公告)号：US08026168B2

    公开(公告)日：2011-09-27

    申请号：US11839410

    申请日：2007-08-15

    申请人： Tadahiro Ishizaka ,  Shigeru Mizuno

    发明人： Tadahiro Ishizaka ,  Shigeru Mizuno

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/53238 ,  C23C16/36 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.

    摘要翻译： 该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。 通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。 一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。 描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

    Method for forming cobalt tungsten cap layers
    8.
    发明授权
    Method for forming cobalt tungsten cap layers 有权
    形成钴钨帽层的方法

    公开(公告)号：US07718527B2

    公开(公告)日：2010-05-18

    申请号：US12242914

    申请日：2008-10-01

    申请人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Miho Jomen

    发明人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Miho Jomen

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76856 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.

    摘要翻译： 提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。 一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层 包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。 另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

    METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS
    9.
    发明申请
    METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS 有权
    形成钴铁矿石层的方法

    公开(公告)号：US20100081276A1

    公开(公告)日：2010-04-01

    申请号：US12242914

    申请日：2008-10-01

    申请人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Miho Jomen

    发明人： Tadahiro Ishizaka ,  Shigeru Mizuno ,  Miho Jomen

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76856 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.

    摘要翻译： 提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。 一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层 包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。 另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。