摘要:
A metal test piece is disposed in a cell filled with a test solution. The metal test piece is electrically charged instantaneously through a counter electrode so as to have a few millivolts polarization potential .eta..sub.t. The charge consumed by the corrosion reaction of the test piece is measured by a potential recorder in the form of a variation of the polarization potential .eta..sub.t with respect to time t. The measured (.eta..sub.t -t) relation is analyzed to obtain a polarization resistance R.sub.P of the metal test piece. After the potential of the metal test piece returns to its natural potential Ecorr, the test piece is charged again until its polarization potential .eta..sub.t rises to 50 millivolts or more, and the (.eta..sub.t -t) relation is measured in the same way as mentioned above. Based on this relation, the Tafel slope .beta..sub.a of the anodic reaction is obtained. After the potential of the metal test piece has returned to its natural potential Ecorr, the test piece is so charged for the third time as to have its polarization potential .eta..sub.t lowered to -50 millivolts or less, and the (.eta..sub.t -t) relation is measured. This relation is analyzed to obtain the Tafel slope .beta..sub.c of the cathodic reaction. Based on the polarization resistance R.sub.P, Tafel slopes .beta..sub.a and .beta..sub.c, the corrosion current density I.sub.corr is obtained, from which the corrosion rate V is calculated.
摘要:
A test piece is immersed in an electroless plating bath. It is then electrically charged instantaneously via a counter electrode to have a polarization potential .eta.(t) of a few millivolts. The charge consumed by the electroless plating reaction of the test piece is measured by a potential recorder in the form of a variation of the polarization potential .eta.(t) with respect to time t. The .eta.(t)-t relation is analyzed to obtain a resistance R of the test piece. After the potential of the test piece has returns to electroless deposition potential E.sub.ELP, the test piece is charged again until its polarization potential .eta.(t) rises to 50 millivolts or more. A .eta.(t)-t relation is obtained. Based on the .eta.(t)-t relation, a Tafel slope .beta..sub.a of anodic reaction is obtained. After the potential of the test piece has returned to electroless deposition potential E.sub.ELP, the test piece is so charged for the third time as to have its polarization potential .eta.(t) lowered to -50 millivolts or less, and a .eta.(t)-t relation is obtained. This relation is analyzed to obtain a Tafel slope .beta..sub.c of anodic reaction of the test piece. Based on the reaction resistance R, Tafel slopes .beta..sub.a and .beta..sub.c, an electroless plating current density I.sub.ELP is obtained. Based on the electroless plating current density I.sub.ELP, a rate of electroless plating V.sub.ELP is calculated.
摘要:
A test piece of metal with a given area S is disposed with a reference electrode in test solution. The open circuit potential E.sub.cor, i.e. the corrosion potential, of the test piece is measured as the reference electrode potential. A given amount of charges q from a capacitor is instantaneously fed through the reference electrode to the electrical double layer of the test piece. When that a given amount of charge q is stored in the electrical double layer, the absolute value of polarization potential of the test piece sharply increases. Then, the absolute value of the polarization potential gradually decreases due to the corrosion reaction. The polarization potential variation is recorded referred to the reference electrode as a polarization potential (.eta..sub.t) - time (t) curve by a potential recorder with an extremely high input impedance. The measurement result of the polarization potential (.eta..sub.t) - time (t) curve may be theoretically expressed by the equation log .eta..sub.t = -t/(C.sub.D R.sub.p) + log .eta..sub.0. Therefore, the initial polarization potential .eta..sub.0 may be obtained by extrapolating the measurement result to the initial time t=0. The differential capacitance of the double layer C.sub.D can readily be calculated by the equation q/S = .DELTA.q = C.sub.D .eta..sub.0, and thus the polarization resistance R.sub.p is obtained from the measurement result. Since the polarization resistance R.sub.p is inversely proportional to the corrosion rate, the corrosion rate may be evaluated. The corrosion rate also is obtained from the polarization resistance R.sub.p by using a theoretical equation.
摘要翻译:具有给定面积S的金属测试片与测试溶液中的参考电极一起布置。 测量试片的开路电位Ecor即腐蚀电位作为参考电极电位。 将来自电容器的给定量的电荷q通过参考电极瞬时馈送到测试片的双电层。 当电双重层中存储给定量的电荷q时,试片的极化电位的绝对值急剧增加。 然后,由于腐蚀反应,极化电位的绝对值逐渐降低。 通过具有极高输入阻抗的电位记录器将参考电极参考的极化电位变化记录为极化电位(eta t) - 时间(t)曲线。 极化电位(eta t) - 时间(t)曲线的测量结果可以理论上由等式log eta t = -t /(CDRp)+ log eta 0表示。因此,可以获得初始极化电位eta 0 通过将测量结果外推到初始时间t = 0。 双层CD的差分电容可以容易地通过等式q / S = DELTA q = CD eta 0计算,因此从测量结果获得极化电阻Rp。 由于极化电阻Rp与腐蚀速度成反比,所以可以评价腐蚀速率。 也可以通过使用理论方程从极化电阻Rp获得腐蚀速率。
摘要:
A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.
摘要:
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
摘要:
A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.
摘要:
To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.
摘要:
An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative.
摘要:
A flush toilet in which an appropriate amount of water is supplied and that can be installed in an area where water pressure is low. The flush toilet is flushed with pressurized flush water and has a flush toilet body having a bowl and a drain trap pipe path; a pressurizing pump for pressurizing flush water to be jetted out; a water storage tank for storing flush water to be pressurized; flush control means for causing rim water discharge to be performed for a predetermined rim water discharge time by water supply pressure of running water and also causing jet water discharge to be made to flush the bowl; flush water replenishing means for replenishing, after the bowl is flushed, flush water to the water storage tank from the running water to thereby return the amount of flush water stored in the water storage tank to a specified level; timing means for measuring a water replenishing time after the flush water replenishing is started until the amount of flush water stored in the water storage tank return to the specified level; and water discharge time regulation means for regulating the rim water discharge time based on the water replenishing time.
摘要:
[Problems to be Solved] Provided is a positive electrode material for an electrical device, which has high capacity and improved initial charge-discharge efficiency.[Means for Solving the Problem] Disclosed is a positive electrode material for an electrical device, which is represented by the formula (1): aLi[Li1/3Mn2/3]O2.(1−a)Li[NixCoyMn1-x-y]O2 (1) (wherein, 0