利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.02 秒)

    Process for producing crystalline silicon thin film
    2.
    发明授权
    Process for producing crystalline silicon thin film 失效
    生产晶体硅薄膜的方法

    公开(公告)号：US06468841B2

    公开(公告)日：2002-10-22

    申请号：US09829450

    申请日：2001-04-10

    申请人： Shinichi Muramatsu ,  Harunori Sakaguchi ,  Susumu Takahashi

    发明人： Shinichi Muramatsu ,  Harunori Sakaguchi ,  Susumu Takahashi

    IPC分类号： H01L2100

    CPC分类号： H01L21/02381 ,  C30B1/023 ,  C30B29/06 ,  C30B29/60 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02672 ,  H01L21/2022 ,  H01L21/76259

    摘要： At least a part of the surface of a crystalline silicon semiconductor substrate is rendered porous to convert at least a part of the crystalline silicon semiconductor substrate to a porous silicon layer. A catalytic metal layer is formed on the porous silicon layer. An amorphous silicon thin film is formed on the catalytic metal layer. The amorphous silicon thin film is heated to monocrystallize the amorphous silicon thin film, thereby converting the amorphous silicon thin film to a crystalline silicon thin film. The crystalline silicon semiconductor substrate, provided with the crystalline silicon thin film, is joined to a support substrate so that the crystalline silicon thin film faces the support substrate. The crystalline silicon semiconductor substrate, together with the porous silicon layer, which is the crystalline silicon semiconductor substrate in its portion converted to a porous layer, is separated and removed from the crystalline silicon thin film joined to the support substrate. By virtue of the above constitution, a process for producing a crystalline silicon thin film can be realized which enables, for example, the temperature required in the production process of a crystalline silicon thin film to be lowered to improve the quality of the crystalline silicon thin film, can realize close control of a steep dopant concentration gradient and the like, and can produce a crystalline silicon thin film suitable for an increase in fabrication density and a reduction in layer thickness of semiconductor devices.

    摘要翻译： 晶体硅半导体衬底的表面的至少一部分被多孔化以将至少一部分晶体硅半导体衬底转化为多孔硅层。 在多孔硅层上形成催化金属层。 在催化金属层上形成非晶硅薄膜。 加热非晶硅薄膜以使非晶硅薄膜单晶化，从而将非晶硅薄膜转化为晶体硅薄膜。 设置有晶体硅薄膜的晶体硅半导体衬底被接合到支撑衬底，使得晶体硅薄膜面向支撑衬底。 结晶硅半导体衬底与多孔硅层一起被转换为多孔层的部分中的晶体硅半导体衬底从与支撑衬底接合的晶体硅薄膜分离并除去。 通过上述结构，可以实现制造结晶硅薄膜的方法，其例如可以降低结晶硅薄膜的生产过程所需的温度，以提高晶体硅薄膜的质量 可以实现陡峭的掺杂剂浓度梯度等的紧密控制，并且可以产生适合于增加制造密度和减小半导体器件的层厚度的晶体硅薄膜。