公开(公告)号：US20100307418A1

公开(公告)日：2010-12-09

申请号：US12791375

申请日：2010-06-01

申请人： Kenji ISO ,  Yoshiyasu ISHIHAMA ,  Ryohei TAKAKI ,  Yuzuru TAKAHASHI

发明人： Kenji ISO ,  Yoshiyasu ISHIHAMA ,  Ryohei TAKAKI ,  Yuzuru TAKAHASHI

IPC分类号： H01L21/205

CPC分类号： C23C16/301 ,  C23C16/45512 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/4584 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio.

摘要翻译： 提供能够提高半导体的膜厚分布的均匀性和反应速度的III族氮化物半导体的气相外延装置。 III族氮化物半导体的气相外延装置包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将原料气体供给到所述反应器; 和反应气体排出部。 在III族氮化物半导体的气相外延装置中，原料气体导入部包括能够喷出通过混合三种即氨，有机金属化合物和载体的混合气体的第一混合气体喷射孔 和任意比例的气体，以及第二混合气体喷射孔，其能够以任意比例喷射通过混合选自氨，有机金属化合物和载气中的两种或三种而获得的混合气体。