公开(公告)号：US20110180001A1

公开(公告)日：2011-07-28

申请号：US13014199

申请日：2011-01-26

申请人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

发明人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  B05C11/00

CPC分类号： C30B29/403 ,  C30B25/14

摘要： [Summary][Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.[Solving Means] The vapor phase epitaxy apparatus is such that: the opposite face of the susceptor has means for flowing a coolant therein; the raw material gas-introducing portion has a plurality of gas ejection orifices formed of such a constitution that the gas ejection orifices are partitioned in a vertical direction with a disk-like partition; and at least one of the gas ejection orifices has such a constitution that the gas ejection orifice is partitioned in a circumferential direction with a plurality of columnar partitions.

摘要翻译： 发明内容提供一种III族氮化物半导体的气相外延装置，包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将来自反应器的中央部的原料气体向反应器的周边部供给， 和反应气体排出部。 即使在大量的大孔径基板的表面上进行晶体生长的情况下，也可以使气相外延装置以相同的流量喷射任意角度的原料气体，能够抑制原料的分解，结晶化 在基座的相对面上的气体。 [解决方案]气相外延装置使得：基座的相对面具有用于使冷却剂流动的装置; 原料气体导入部具有多个气体喷出口，其形成为气体喷出孔沿着垂直方向与盘状隔壁分隔的结构， 并且气体喷射孔中的至少一个具有这样的结构，即气体喷射孔在圆周方向上与多个柱状隔板分隔开。

公开(公告)号：US08679254B2

公开(公告)日：2014-03-25

申请号：US13014199

申请日：2011-01-26

申请人： Kenji Iso ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

发明人： Kenji Iso ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C30B29/403 ,  C30B25/14

摘要： [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.[Solving Means] The vapor phase epitaxy apparatus is such that: the opposite face of the susceptor has means for flowing a coolant therein; the raw material gas-introducing portion has a plurality of gas ejection orifices formed of such a constitution that the gas ejection orifices are partitioned in a vertical direction with a disk-like partition; and at least one of the gas ejection orifices has such a constitution that the gas ejection orifice is partitioned in a circumferential direction with a plurality of columnar partitions.

摘要翻译： [问题]提供一种III族氮化物半导体的气相外延装置，包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将来自反应器的中央部的原料气体向反应器的周边部供给， 和反应气体排出部。 即使在大量的大孔径基板的表面上进行晶体生长的情况下，也可以使气相外延装置以相同的流量喷射任意角度的原料气体，能够抑制原料的分解，结晶化 在基座的相对面上的气体。 [解决方案]气相外延装置使得：基座的相对面具有用于使冷却剂流动的装置; 原料气体导入部具有多个气体喷出口，其形成为气体喷出孔沿着垂直方向与盘状隔壁分隔的结构， 并且气体喷射孔中的至少一个具有这样的结构，即气体喷射孔在圆周方向上与多个柱状隔板分隔开。

公开(公告)号：US20100307418A1

公开(公告)日：2010-12-09

申请号：US12791375

申请日：2010-06-01

申请人： Kenji ISO ,  Yoshiyasu ISHIHAMA ,  Ryohei TAKAKI ,  Yuzuru TAKAHASHI

发明人： Kenji ISO ,  Yoshiyasu ISHIHAMA ,  Ryohei TAKAKI ,  Yuzuru TAKAHASHI

IPC分类号： H01L21/205

CPC分类号： C23C16/301 ,  C23C16/45512 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/4584 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio.

摘要翻译： 提供能够提高半导体的膜厚分布的均匀性和反应速度的III族氮化物半导体的气相外延装置。 III族氮化物半导体的气相外延装置包括：用于保持基板的基座; 基座的相对面; 用于加热基板的加热器; 由基座和基座的相对面之间的间隙形成的反应器; 原料气体导入部，其将原料气体供给到所述反应器; 和反应气体排出部。 在III族氮化物半导体的气相外延装置中，原料气体导入部包括能够喷出通过混合三种即氨，有机金属化合物和载体的混合气体的第一混合气体喷射孔 和任意比例的气体，以及第二混合气体喷射孔，其能够以任意比例喷射通过混合选自氨，有机金属化合物和载气中的两种或三种而获得的混合气体。

公开(公告)号：US20100229794A1

公开(公告)日：2010-09-16

申请号：US12713237

申请日：2010-02-26

申请人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

发明人： Kenji ISO ,  Yoshiyasu Ishihama ,  Ryohei Takaki ,  Yuzuru Takahashi

IPC分类号： C23C16/34

CPC分类号： C23C16/303 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  C30B25/02 ,  C30B29/403

摘要： Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown.

摘要翻译： 提供了一种用于III族氮化物半导体的气相外延装置，包括用于保持基板的基座，基座的相对面，用于加热基板的加热器，设置在基座的中心部分的原料气体导入部 以及由基座和基座的相对面之间的间隙形成的反应器，其中安装的基板与基座的相对面之间的距离非常窄，并且提供了冷却剂流过的构造，用于 基座的相对面。 气相外延装置还包括在基座的相对面上的用于向反应器内部喷射惰性气体的细孔部分和用于向惰性气体供应微细多孔部分的构造。 即使当晶体生长在由具有大直径的基座保持的许多大孔径基板的每一个的表面上或者甚至当基板上的晶体生长时，用于III族氮化物半导体的气相外延装置也能够有效地，高质量的晶体生长 在晶体生长之前在1000℃以上的温度下加热。