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    Method and apparatus for testing tunnel magnetoresistive effect element
    1.
    发明授权
    Method and apparatus for testing tunnel magnetoresistive effect element 有权
    隧道磁阻效应元件测试方法及装置

    公开(公告)号：US07236392B2

    公开(公告)日：2007-06-26

    申请号：US11101468

    申请日：2005-04-08

    申请人： Shunji Saruki ,  Kenji Inage ,  Nozomu Hachisuka ,  Hiroshi Kiyono

    发明人： Shunji Saruki ,  Kenji Inage ,  Nozomu Hachisuka ,  Hiroshi Kiyono

    IPC分类号： G11B5/455

    CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C29/50008 ,  G11C2029/5006

    摘要： Testing a TMR element includes a step of measuring initially a resistance value of the TMR element to provide the measured resistance value as a first resistance value, a step of measuring a resistance value of the TMR element after continuously feeding a current through the TMR element from a anti-substrate side to a substrate side for a predetermined period of time, to provide the measured resistance value as a second resistance value, and a step of evaluating the TMR element by comparing the first resistance value and the second resistance value with each other.

    摘要翻译： 测试TMR元件包括首先测量TMR元件的电阻值以提供测量的电阻值作为第一电阻值的步骤，在连续馈送通过TMR元件的电流之后测量TMR元件的电阻值的步骤 将基板侧的反基板侧保持规定时间，将测定的电阻值作为第二电阻值提供，以及通过将第一电阻值与第二电阻值进行比较来对TMR元件进行比较的步骤 。

    Method and apparatus for testing tunnel magnetoresistive effect element
    3.
    发明授权
    Method and apparatus for testing tunnel magnetoresistive effect element 有权
    隧道磁阻效应元件测试方法及装置

    公开(公告)号：US07227772B2

    公开(公告)日：2007-06-05

    申请号：US11070237

    申请日：2005-03-03

    申请人： Shunji Saruki ,  Kenji Inage ,  Nozomu Hachisuka ,  Hiroshi Kiyono

    发明人： Shunji Saruki ,  Kenji Inage ,  Nozomu Hachisuka ,  Hiroshi Kiyono

    IPC分类号： G11B5/455

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/455 ,  G11B2005/0018

    摘要： Testing a TMR element includes a step of measuring initially a resistance value of the TMR element to provide the measured resistance value as a first resistance value, a step of measuring a resistance value of the TMR element after continuously feeding a current through the TMR element for a predetermined period of time, to provide the measured resistance value as a second resistance value, and a step of evaluating the TMR element depending upon a degree of change in resistance of the TMR element. The degree of change in resistance is determined based upon the first resistance value and the second resistance value.

    摘要翻译： 测试TMR元件包括首先测量TMR元件的电阻值以提供测量的电阻值作为第一电阻值的步骤，在连续馈送电流通过TMR元件之后测量TMR元件的电阻值的步骤，用于 提供测量的电阻值作为第二电阻值的预定时间段，以及根据TMR元件的电阻变化程度来评估TMR元件的步骤。 基于第一电阻值和第二电阻值来确定电阻的变化程度。

    Composite type thin-film magnetic head
    6.
    发明申请
    Composite type thin-film magnetic head 有权
    复合型薄膜磁头

    公开(公告)号：US20050219765A1

    公开(公告)日：2005-10-06

    申请号：US11079677

    申请日：2005-03-15

    申请人： Hiroshi Kiyono ,  Nozomu Hachisuka ,  Shunji Saruki ,  Noriaki Kasahara

    发明人： Hiroshi Kiyono ,  Nozomu Hachisuka ,  Shunji Saruki ,  Noriaki Kasahara

    IPC分类号： G11B5/31 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A composite type thin-film magnetic head is provided, which comprises: a MR read head element having an upper shield layer, a lower shield layer, an MR layer in which a sense current flows in a direction perpendicular to a surface of the layer through the upper shield layer and the lower shield layer; an inductive write head element formed on the MR read head element, having an upper magnetic pole layer, a recording gap layer, a lower magnetic pole layer where end portion is opposed to an end portion of the upper magnetic pole layer through the recording gap layer, and a write coil; and a capacitance C12 between the write coil and the upper shield layer, set to 0.1 pF or less.

    摘要翻译： 提供一种复合型薄膜磁头，其包括：MR读取头元件，具有上屏蔽层，下屏蔽层，MR层，其中感测电流沿垂直于该层的表面的方向流动 上屏蔽层和下屏蔽层; 形成在MR读头元件上的感应写头元件，具有上磁极层，记录间隙层，下磁极层，其端部通过记录间隙层与上磁极层的端部相对 和写入线圈; 和写入线圈和上部屏蔽层之间的电容C 12 12设定为0.1pF以下。

    Composite type thin film magnetic head having a low parasitic capacitance between a write coil and an upper read head shield
    7.
    发明授权
    Composite type thin film magnetic head having a low parasitic capacitance between a write coil and an upper read head shield 有权
    复合型薄膜磁头在写入线圈和上部读取磁头屏蔽之间具有低的寄生电容

    公开(公告)号：US07274539B2

    公开(公告)日：2007-09-25

    申请号：US11079677

    申请日：2005-03-15

    申请人： Hiroshi Kiyono ,  Nozomu Hachisuka ,  Shunji Saruki ,  Noriaki Kasahara

    发明人： Hiroshi Kiyono ,  Nozomu Hachisuka ,  Shunji Saruki ,  Noriaki Kasahara

    IPC分类号： G11B5/39 ,  G11B5/11 ,  G11B5/40

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A composite type thin-film magnetic head is provided, which comprises: a MR read head element having an upper shield layer, a lower shield layer, an MR layer in which a sense current flows in a direction perpendicular to a surface of the layer through the upper shield layer and the lower shield layer; an inductive write head element formed on the MR read head element, having an upper magnetic pole layer, a recording gap layer, a lower magnetic pole layer where end portion is opposed to an end portion of the upper magnetic pole layer through the recording gap layer, and a write coil; and a capacitance C12 between the write coil and the upper shield layer, set to 0.1 pF or less.

    摘要翻译： 提供一种复合型薄膜磁头，其包括：MR读取头元件，具有上屏蔽层，下屏蔽层，MR层，其中感测电流沿垂直于该层的表面的方向流动 上屏蔽层和下屏蔽层; 形成在MR读头元件上的感应写头元件，具有上磁极层，记录间隙层，下磁极层，其端部通过记录间隙层与上磁极层的端部相对 和写入线圈; 和写入线圈和上部屏蔽层之间的电容C 12 12设定为0.1pF以下。