External resonator-type wavelength tunable laser device
    1.
    发明授权
    External resonator-type wavelength tunable laser device 有权
    外部谐振器型波长可调激光器件

    公开(公告)号:US08189631B2

    公开(公告)日:2012-05-29

    申请号:US12664294

    申请日:2008-05-22

    IPC分类号: H01S3/13

    摘要: The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.

    摘要翻译: 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,λc(nm)表示波长可调激光器件的工作波长范围的中心处的波长。

    EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE
    2.
    发明申请
    EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE 有权
    外部谐振器型波长激光器激光器件

    公开(公告)号:US20100246618A1

    公开(公告)日:2010-09-30

    申请号:US12664294

    申请日:2008-05-22

    IPC分类号: H01S3/13

    摘要: The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.

    摘要翻译: 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,he(nm)表示波长可调激光器件的工作波长范围的中心处的波长。

    External resonator type wavelength-variable laser
    3.
    发明授权
    External resonator type wavelength-variable laser 失效
    外部谐振器型波长可变激光器

    公开(公告)号:US07656911B2

    公开(公告)日:2010-02-02

    申请号:US11632213

    申请日:2005-05-25

    IPC分类号: H01S5/10

    摘要: To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions. The following conditions are satisfied for one Δfi region: mj=(j×Δffs)/ΔfFP where Δffs: a period of the wavelength selection filter, ΔfFP: a Fabry-Perot mode interval dependent on a length of the external resonator, j: an integer not smaller than 1 and not larger than (Δfi/Δffs). A coefficient Mj is an integer obtained by rounding off the first digit after decimal point of the coefficient mj. A coefficient Ni,j is an integer obtained by discarding the first digit after decimal point of Δfi/(j×Δffs). In this regard, a relation of (|Ni,j×2π(Mj−mj)|

    摘要翻译: 为了促进外部谐振器型波长可变激光器的相位调整。 外部谐振器型波长可变激光器(50)包括半导体光放大器(1),具有周期性频率特性的波长选择滤波器(3),外部谐振器(6)和波长可变滤波器(4)。 Deltaf分为一个或多个区域。 对于一个Deltafi区域,满足以下条件:mj =(jxDeltaffs)/ DeltafFP其中Deltaffs:波长选择滤波器的周期,DeltafFP:取决于外部谐振器长度的法布里 - 珀罗模式间隔,j:不整数 小于1并且不大于(Deltafi / Deltaffs)。 系数Mj是通过舍入系数mj的小数点后的第一位数而获得的整数。 系数Ni,j是通过丢弃Deltafi /(jxDeltaffs)小数点后的第一位数获得的整数。 在这方面,对于一个j,满足(| Ni,jx2pi(Mj-mj)|

    External Resonator Type Wavelength-Variable Laser
    4.
    发明申请
    External Resonator Type Wavelength-Variable Laser 失效
    外部谐振器类型波长可变激光器

    公开(公告)号:US20080025349A1

    公开(公告)日:2008-01-31

    申请号:US11632213

    申请日:2005-05-25

    IPC分类号: H01S5/14

    摘要: To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions. The following conditions are satisfied for one Δfi region: mj=(j×Δffs)/ΔFP where Δffs: a period of the wavelength selection filter, ΔfFP: a Fabry-Perot mode interval dependent on a length of the external resonator, j: an integer not smaller than 1 and not larger than (Δfi/Δffs). A coefficient Mj is an integer obtained by rounding off the first digit after decimal point of the coefficient mj. A coefficient Ni,j is an integer obtained by discarding the first digit after decimal point of Δfi/(jΔffs). In this regard, a relation of (|Ni,j×2π(Mj−mj)|

    摘要翻译: 为了促进外部谐振器型波长可变激光器的相位调整。 外部谐振器型波长可变激光器(50)包括半导体光放大器(1),具有周期性频率特性的波长选择滤波器(3),外部谐振器(6)和波长可变滤波器(4)。 Deltaf分为一个或多个区域。 对于一个Deltaf 区域满足以下条件:m(j)=(jxDeltaf&lt; fs)/ Delta&lt;&lt;&lt; Deltaf :波长选择滤波器的周期,DeltafFP:取决于外部谐振器的长度的法布里 - 珀罗模式间隔,j:不小于1且不大于(Deltaf < SUB>我 / Deltaf fs )。 系数M N是通过舍入系数m≠j的小数点后的第一数位而获得的整数。 系数N i,j是通过丢弃Deltaf i(jDeltaf&lt; fs&gt;)的小数点之后的第一位获得的整数。 在这方面,满足(| N 1,j 2 x 2 pi(M 1 -j j 2)|π2)的关系 一个j。

    Optical intergrated device
    5.
    发明申请
    Optical intergrated device 审中-公开
    光学集成装置

    公开(公告)号:US20090268762A1

    公开(公告)日:2009-10-29

    申请号:US11921763

    申请日:2005-06-08

    IPC分类号: H01S3/10 H01S3/08 H01S5/00

    摘要: An object of the invention is to provide an optical integrated device which enables to supply a wide range of variable wavelength and to reduce the coupling loss. The optical integrated circuit chip (10) includes a semiconductor optical amplifier section (20), a phase control section (18), a partially reflecting mirror (16) having optical power splitter function and a Mach-Zehnder optical modulator (22), wherein all elements are formed on a same substrate monolithically. On each facet of the optical integrated circuit chip (10), an Anti-Reflection coating (12, 14) is formed respectively. A lens (30), an optical filter (32) and an external resonator mirror (28) are located outside of the optical integrated circuit chip (10), wherein an external cavity laser is formed with a semiconductor optical amplifier (SOA) section (20) operating as gain section, a partially reflecting mirror (16) operating as first reflecting mirror and an external resonator mirror (28) operating as a second mirror.

    摘要翻译: 本发明的目的是提供一种能够提供宽范围的可变波长并减少耦合损耗的光学集成器件。 光集成电路芯片(10)包括半导体光放大器部分(20),相位控制部分(18),具有光功率分配器功能的部分反射镜(16)和马赫 - 策德尔光调制器(22),其中 所有元件均匀地形成在相同的衬底上。 在光集成电路芯片(10)的每个面上分别形成防反射涂层(12,14)。 透镜(30),滤光器(32)和外部谐振镜(28)位于光集成电路芯片(10)的外部,其中外腔激光器形成有半导体光放大器(SOA)部分 20)作为增益部分工作,作为第一反射镜操作的部分反射镜(16)和作为第二反射镜操作的外部谐振器反射镜(28)。

    Semiconductor laser, module and optical transmitter
    6.
    发明授权
    Semiconductor laser, module and optical transmitter 失效
    半导体激光器,模块和光发射机

    公开(公告)号:US08457168B2

    公开(公告)日:2013-06-04

    申请号:US12086287

    申请日:2007-01-10

    IPC分类号: H01S5/00

    CPC分类号: H01S5/026

    摘要: A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.

    摘要翻译: 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。

    Wavelength-tunable laser apparatus and wavelength changing method thereof
    7.
    发明授权
    Wavelength-tunable laser apparatus and wavelength changing method thereof 有权
    波长可调激光装置及其波长变换方法

    公开(公告)号:US08284807B2

    公开(公告)日:2012-10-09

    申请号:US12865779

    申请日:2008-12-09

    IPC分类号: H01S3/10 H01S3/13 H01S3/00

    摘要: An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.

    摘要翻译: 本发明的目的是提供一种波长可调谐激光装置及其波长改变方法,该激光装置防止波长变化时的跳网。 根据本发明的波长可调激光装置101包括半导体光放大器102和周期性波长选择滤波器106.此外,波长可调激光装置101包括相位控制单元111,其同时控制施加到 半导体光放大器102和在开环控制下的波长可调激光器的相位调谐。 因此,可以实现暗调。

    External cavity wavelength tunable laser device and optical output module
    8.
    发明授权
    External cavity wavelength tunable laser device and optical output module 失效
    外腔波长可调激光器件和光输出模块

    公开(公告)号:US07991024B2

    公开(公告)日:2011-08-02

    申请号:US11994085

    申请日:2006-06-29

    IPC分类号: H01S3/13 H01S3/08

    CPC分类号: H01S5/141

    摘要: In an external cavity wavelength tunable laser device including an external cavity (20) which includes a semiconductor optical amplifier (2) and performs laser oscillation operation by feeding back external light, a wavelength tunable mirror (7) having at least a single-peak reflection spectrum characteristic within a laser wavelength tuning range is placed on one end of the external cavity (20), and a Fabry-Perot mode interval determined by the effective length of the external cavity (20) is not less than 1/10 times and not more than 10 times the reflection band full width half maximum of the wavelength tunable mirror (7).

    摘要翻译: 在包括具有半导体光放大器(2)的外部空腔(20)并通过反馈外部光进行激光振荡操作的外腔波长可调激光器件中,具有至少单峰反射的波长可调谐镜(7) 在激光波长调谐范围内的光谱特性被放置在外腔(20)的一端,并且由外腔(20)的有效长度确定的法布里 - 珀罗模式间隔不小于1/10倍 波长可调镜(7)的反射带全宽度的最大半数的10倍以上。

    WAVELENGTH-TUNABLE LASER APPARATUS AND WAVELENGTH CHANGING METHOD THEREOF
    9.
    发明申请
    WAVELENGTH-TUNABLE LASER APPARATUS AND WAVELENGTH CHANGING METHOD THEREOF 有权
    波长波长激光装置及其波长变化方法

    公开(公告)号:US20110002349A1

    公开(公告)日:2011-01-06

    申请号:US12865779

    申请日:2008-12-09

    IPC分类号: H01S5/06 H01S5/14

    摘要: An object is to provide a wavelength-tunable laser apparatus that prevents a grid-hopping upon wavelength change, and a wavelength changing method thereof. A wavelength-tunable laser apparatus 101 according to the present invention includes a semiconductor optical amplifier 102 and a periodic wavelength-selection filter 106. Further, the wavelength-tunable laser apparatus 101 includes a phase control unit 111 that concurrently controls a current applied to the semiconductor optical amplifier 102 and a phase tuning of a wavelength-tunable laser under an open-loop control. Thus, dark-tuning can be achieved.

    摘要翻译: 本发明的目的是提供一种波长可调谐激光装置及其波长改变方法,该激光装置防止波长变化时的跳网。 根据本发明的波长可调激光装置101包括半导体光放大器102和周期性波长选择滤波器106.此外,波长可调激光装置101包括相位控制单元111,其同时控制施加到 半导体光放大器102和在开环控制下的波长可调激光器的相位调谐。 因此,可以实现暗调。

    VARIABLE-WAVELENGTH FILTER AND VARIABLE-WAVELENGTH LASER
    10.
    发明申请
    VARIABLE-WAVELENGTH FILTER AND VARIABLE-WAVELENGTH LASER 审中-公开
    可变波长滤波器和可变波长激光器

    公开(公告)号:US20090122817A1

    公开(公告)日:2009-05-14

    申请号:US12064441

    申请日:2006-09-04

    IPC分类号: H01S3/10 G02B6/10

    摘要: Only the light at an overlapping wavelength of the transmission characteristics of at least two wavelength selecting filters is looped, and at least one of the wavelength selecting filters varies a selected wavelength. Since a loss due to the optical filters is small and there is not a loss caused by a highly reflecting film, the output of an external-resonator variable-wavelength laser can be increased. Optical circuit component (8) divides light input from external device (1) into at least two ports. Loop waveguide (11) interconnects at least ports (9, 10) divided by optical circuit component (8) in the form of a loop. At least two first wavelength selecting filters (12, 13) are inserted in series in a path of loop waveguide (11), and have periodic transmission characteristics on a frequency axis which are different from each other. At least one of first wavelength selecting filters (12, 13) varies the selected wavelength.

    摘要翻译: 只有至少两个波长选择滤波器的传输特性的重叠波长的光被环绕,并且至少一个波长选择滤波器改变选定的波长。 由于由于滤光器引起的损耗小,并且不会由高反射膜引起的损耗,所以可以增加外部谐振器可变波长激光器的输出。 光电路部件(8)将从外部设备(1)输入的光分成至少两个端口。 环形波导(11)至少以循环形式的由光电路部件(8)划分的端口(9,10)互连。 至少两个第一波长选择滤波器(12,13)串联插入到环形波导(11)的路径中,并且在频率轴上具有彼此不同的周期性传输特性。 第一波长选择滤光器(12,13)中的至少一个改变所选择的波长。