公开(公告)号：US20070223342A1

公开(公告)日：2007-09-27

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： C23F1/00 ,  G11B31/00 ,  H01L21/306

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US08337659B2

公开(公告)日：2012-12-25

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US07803230B2

公开(公告)日：2010-09-28

申请号：US10593560

申请日：2005-04-05

申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置 由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

公开(公告)号：US20070175501A1

公开(公告)日：2007-08-02

申请号：US10593560

申请日：2005-04-05

申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。 由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

公开(公告)号：US07806989B2

公开(公告)日：2010-10-05

申请号：US11394337

申请日：2006-03-31

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US08137478B2

公开(公告)日：2012-03-20

申请号：US12857973

申请日：2010-08-17

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US20100307543A1

公开(公告)日：2010-12-09

申请号：US12857973

申请日：2010-08-17

申请人： Kenji SEKIGUCHI ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji SEKIGUCHI ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US20070017555A1

公开(公告)日：2007-01-25

申请号：US11394337

申请日：2006-03-31

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B5/04 ,  B08B7/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US08771429B2

公开(公告)日：2014-07-08

申请号：US13420870

申请日：2012-03-15

申请人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B7/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20070107751A1

公开(公告)日：2007-05-17

申请号：US10581729

申请日：2004-12-16

申请人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

发明人： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

IPC分类号： B08B7/04 ,  C23G1/00 ,  B08B3/00

CPC分类号： H01L21/68721 ,  B01D53/002 ,  B01D2257/106 ,  C01B13/10 ,  H01L21/6715 ,  H01L21/68742 ,  H01L21/68785

摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

摘要翻译： 将水蒸汽与由放电型臭氧发生器产生的O 3气体混合。 混合流体由冷却器冷却，由此含有的O 3 3气体中的杂质如金属和氮氧化物溶解在冷凝水中。 随后，气液分离器从冷凝水中分离出O 3 N 3气体。 水蒸汽再次与O 3 3气体混合。 混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。