公开(公告)号：US20110135628A1

公开(公告)日：2011-06-09

申请号：US13059580

申请日：2009-08-28

申请人： Kenji Sera ,  Takanori Mashiko ,  Shuji Ikegami ,  Takenori Orihashi ,  Michio Kanbe

发明人： Kenji Sera ,  Takanori Mashiko ,  Shuji Ikegami ,  Takenori Orihashi ,  Michio Kanbe

IPC分类号： A61K35/00

CPC分类号： A61K35/74 ,  A23K10/18 ,  A23K50/10 ,  A23K50/40 ,  A23K50/50 ,  A23K50/75 ,  A23L33/135 ,  A61K35/744 ,  A61K38/00

摘要： [Objects] An object of the present invention is to provide an orally administrable agent for medical use for animals for preventing or treating coccidiosis which is highly safe with no side effects, an agent for a food or a drink for use in the preservation of health, a feed additive, and a feed comprising the same. Another object of the present invention is to provide a method for rearing animals (particularly, livestock and poultry) using the same and a method for controlling coccidiosis using the same.[Means for Resolution] By using a fermentation product of a lactic acid bacterium and/or a whey fermentation product of a propionic acid bacterium as an active ingredient, an agent for preventing or treating coccidiosis, an agent for use in the preservation of health, and a feed additive can be provided.

摘要翻译： 本发明的目的是提供一种用于预防或治疗高度安全，无副作用的动物用于动物的口服给药剂，用于保护健康的食品或饮料剂 ，饲料添加剂和包含该饲料添加剂的饲料。 本发明的另一个目的是提供使用该动物（特别是家畜和家禽）饲养动物的方法和使用该方法控制球虫病的方法。 [解决手段]通过使用乳酸菌的发酵产物和/或丙酸细菌的乳清发酵产物作为活性成分，用于预防或治疗球虫病的药剂，用于保护健康的药剂， 可以提供饲料添加剂。

公开(公告)号：US09095159B2

公开(公告)日：2015-08-04

申请号：US13518544

申请日：2010-12-22

申请人： Kenji Sera ,  Katsunori Kimura ,  Michio Kanbe ,  Takenori Orihashi ,  Manami Yoshida ,  Yoshiaki Obara

发明人： Kenji Sera ,  Katsunori Kimura ,  Michio Kanbe ,  Takenori Orihashi ,  Manami Yoshida ,  Yoshiaki Obara

IPC分类号： A61K35/74 ,  A61P1/04 ,  C12N1/20 ,  A23K1/18 ,  A23K1/00 ,  A61K35/741

CPC分类号： A23K1/1813 ,  A23K10/18 ,  A23K50/10 ,  A61K35/741

摘要： The invention provides a composition that enhances the proliferation activity of propionic acid bacteria in the rumen of ruminants to allow the propionic acid bacteria to sufficiently exhibit their metabolic function in the rumen for the prevention and treatment of rumen acidosis in ruminants. The invention also provides use of the composition. Viable propionic acid bacteria and a lactic acid bacteria culture are orally administered to a ruminant to dramatically (rapidly) promote the proliferation of the propionic acid bacteria in the ruminant rumen, and to thereby increase the volatile fatty acid concentration in the rumen for the prevention and/or treatment of rumen acidosis in the ruminant.

摘要翻译： 本发明提供了提高反刍动物瘤胃中丙酸细菌增殖活性的组合物，以使丙酸菌在瘤胃中充分发挥其代谢功能，用于预防和治疗反刍动物中的瘤胃酸中毒。 本发明还提供了组合物的用途。 向反刍动物口服给予活性丙酸菌和乳酸菌培养物以显着（快速）促进反刍动物瘤胃中丙酸细菌的增殖，从而增加瘤胃中的挥发性脂肪酸浓度，以防止和 /或治疗反刍动物中的瘤胃酸中毒。

公开(公告)号：US20120276055A1

公开(公告)日：2012-11-01

申请号：US13518544

申请日：2010-12-22

申请人： Kenji Sera ,  Katsunori Kimura ,  Michio Kanbe ,  Takenori Orihashi ,  Manami Yoshida ,  Yoshiaki Obara

发明人： Kenji Sera ,  Katsunori Kimura ,  Michio Kanbe ,  Takenori Orihashi ,  Manami Yoshida ,  Yoshiaki Obara

IPC分类号： A61K35/74 ,  A61P1/04 ,  C12N1/20

CPC分类号： A23K1/1813 ,  A23K10/18 ,  A23K50/10 ,  A61K35/741

摘要： The invention provides a composition that enhances the proliferation activity of propionic acid bacteria in the rumen of ruminants to allow the propionic acid bacteria to sufficiently exhibit their metabolic function in the rumen for the prevention and treatment of rumen acidosis in ruminants. The invention also provides use of the composition. Viable propionic acid bacteria and a lactic acid bacteria culture are orally administered to a ruminant to dramatically (rapidly) promote the proliferation of the propionic acid bacteria in the ruminant rumen, and to thereby increase the volatile fatty acid concentration in the rumen for the prevention and/or treatment of rumen acidosis in the ruminant.

摘要翻译： 本发明提供了提高反刍动物瘤胃中丙酸细菌增殖活性的组合物，以使丙酸菌在瘤胃中充分发挥其代谢功能，用于预防和治疗反刍动物中的瘤胃酸中毒。 本发明还提供了组合物的用途。 向反刍动物口服给予活性丙酸菌和乳酸菌培养物以显着（快速）促进反刍动物瘤胃中丙酸细菌的增殖，从而增加瘤胃中的挥发性脂肪酸浓度，以防止和 /或治疗反刍动物中的瘤胃酸中毒。

公开(公告)号：US07027109B2

公开(公告)日：2006-04-11

申请号：US10209870

申请日：2002-08-02

申请人： Kenji Sera ,  Fujio Okumura

发明人： Kenji Sera ,  Fujio Okumura

IPC分类号： G02F1/136

CPC分类号： H01L29/78633 ,  G02F1/136209 ,  G02F1/136227 ,  H01L27/12

摘要： A TFT array substrate blocks light traveling toward active layers of the TFTs. A patterned first light-shielding layer is formed between a transparent plate and TFTs to overlap with the active layers of the TFTs. A patterned third light-shielding layer is formed to cover the TFTs on the opposite side to the plate with respect to the TFTs. The third light-shielding layer has the first parts extending along rows of the matrix and the second parts extending along the columns thereof. A patterned second light-shielding layer is formed between the first light-shielding layer and the TFTs. The second light-shielding layer has a light-absorbing property, which absorbs the light entering the inside of the substrate. A patterned fourth light-shielding layer may be additionally provided between the TFTs and the third light-shielding layer.

摘要翻译： TFT阵列基板阻挡向TFT的有源层传播的光。 在透明板和TFT之间形成图案化的第一遮光层，以与TFT的有源层重叠。 形成图案化的第三遮光层，以相对于TFT覆盖与板相对的TFT上的TFT。 第三遮光层具有沿着矩阵的行延伸的第一部分，并且第二部分沿其列延伸。 在第一遮光层和TFT之间形成图案化的第二遮光层。 第二遮光层具有吸收进入基板内部的光的光吸收性。 可以在TFT和第三遮光层之间附加设置图案化的第四遮光层。

公开(公告)号：US06287898B1

公开(公告)日：2001-09-11

申请号：US09325161

申请日：1999-06-03

申请人： Kenji Sera

发明人： Kenji Sera

IPC分类号： H01L2100

CPC分类号： H01L29/78624 ,  H01L29/4908

摘要： After a polycrystalline silicon film is formed on a glass substrate, the first gate insulating film is formed on the polycrystalline silicon film and the polycrystalline silicon film and the first gate insulating film are patterned into a island shape. Next, impurities are doped into the polycrystalline silicon film through the first gate insulating film using a resist mask, thereby forming the first source-drain region in part of the polycrystalline silicon film. Further, the second gate insulating film is formed on the first gate insulating film and a gate electrode is formed on the second gate insulating film. Thereafter, impurities are lightly doped through the first and second gate insulating films to thereby form the second source-drain region. Thus, no high etching technique is required for the manufacture of a thin film transistor and occurrence of electrostatic damage to the gate insulating films is prevented, to thereby make it possible to improve production yield.

摘要翻译： 在玻璃基板上形成多晶硅膜之后，在多晶硅膜上形成第一栅极绝缘膜，将多晶硅膜和第一栅极绝缘膜图案化为岛状。 接下来，使用抗蚀剂掩模通过第一栅极绝缘膜将杂质掺杂到多晶硅膜中，从而在多晶硅膜的一部分中形成第一源极 - 漏极区域。 此外，第二栅极绝缘膜形成在第一栅极绝缘膜上，并且栅电极形成在第二栅极绝缘膜上。 此后，通过第一和第二栅极绝缘膜轻掺杂杂质，从而形成第二源 - 漏区。 因此，制造薄膜晶体管不需要高蚀刻技术，并且防止了对栅极绝缘膜的静电损伤的发生，从而可以提高产量。

公开(公告)号：US07595533B2

公开(公告)日：2009-09-29

申请号：US11740226

申请日：2007-04-25

申请人： Kenji Sera ,  Hiroshi Tsuchi

发明人： Kenji Sera ,  Hiroshi Tsuchi

IPC分类号： H01L29/76 ,  H01L31/062

CPC分类号： H01L27/127 ,  G11C7/062 ,  H01L27/1214 ,  H03F3/45192 ,  H03F3/45219 ,  H03K5/2481 ,  H03K19/0016

摘要： When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is introduced at the same time to the channel region of a part of the n-channel TFTs and a part of the p-channel TFTs. In one channel doping operation, a set of low-VT and high-VT p-channel TFTs and a set of low-VT and high-VT n-channel TFTs can be formed. This method is used for forming high-VT TFTs, which can reduce the off-current, in logics and switch circuits and for forming low-VT TFTs, which can enlarge the dynamic range, in analog circuits to improve the performance of a thin film semiconductor.

摘要翻译： 当在形成在玻璃基板上的多晶硅膜上形成n沟道薄膜晶体管（TFT）和p沟道TFT时，包括其中P掺杂剂或N掺杂剂同时引入沟道的工艺 n沟道TFT的一部分的区域和p沟道TFT的一部分。 在单通道掺杂操作中，可以形成一组低VT和高VT p沟道TFT以及一组低VT和高VT n沟道TFT。 该方法用于形成高VT TFT，其可以减少逻辑和开关电路中的截止电流，并且用于形成低VT TFT，这可以扩大模拟电路中的动态范围，以提高薄膜的性能 半导体。

公开(公告)号：US07388625B2

公开(公告)日：2008-06-17

申请号：US11313955

申请日：2005-12-22

申请人： Tadahiro Matsuzaki ,  Kenji Sera

发明人： Tadahiro Matsuzaki ,  Kenji Sera

IPC分类号： G02F1/136

CPC分类号： G02F1/136209 ,  G02F1/136213

摘要： A TFT array substrate is provided with an auxiliary capacitance that has a plurality of lower electrodes disposed for each pixel in the row and column directions below a pixel TFT and connected to the drain area of the corresponding pixel TFT. The distances L1 and L2 between separation areas formed between the lower electrodes adjacent in the row direction and the channel areas of the two pixel TFTs that correspond to the lower electrodes are substantially equal to each other. The distances L3 and L4 between separation areas formed between the lower electrodes adjacent in the column direction and the channel areas of the two pixel TFTs that correspond to the lower electrodes are substantially equal to each other. Furthermore, an upper electrode is disposed above the separation areas.

摘要翻译： TFT阵列基板设置有辅助电容，该辅助电容具有为像素TFT下方的行和列方向上的每个像素设置的多个下电极，并且连接到相应的像素TFT的漏极区域。 在行方向上相邻的下部电极之间形成的分离区域与对应于下部电极的两个像素TFT的沟道区域之间的距离L 1和L 2基本相等。 在与列方向相邻的下部电极之间形成的分离区域与对应于下部电极的两个像素TFT的沟道区域之间的距离L 3和L 4基本相等。 此外，上部电极设置在分离区域的上方。

公开(公告)号：US07105905B2

公开(公告)日：2006-09-12

申请号：US10724040

申请日：2003-12-01

申请人： Naoki Matsunaga ,  Kenji Sera

发明人： Naoki Matsunaga ,  Kenji Sera

IPC分类号： H01L29/04 ,  G02F1/136

CPC分类号： H01L27/1218 ,  G02F1/136209 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78633

摘要： A thin film transistor is provided including an active layer, in which a source region and drain region are formed, a first light-shielding film shielding a light incident on the active layer, and a second light-shielding film between the active layer and the first shielding film. A carrier concentration of at least surface portion of the second light-shielding film which opposes the active layer is about 1017/cm3 or less.

摘要翻译： 提供一种薄膜晶体管，其包括其中形成源极区和漏极区的有源层，屏蔽入射在有源层上的光的第一遮光膜，以及在活性层和有源层之间的第二遮光膜 第一屏蔽膜。 与有源层相对的第二遮光膜的至少表面部分的载流子浓度为约10/3/3以上。

公开(公告)号：US5329140A

公开(公告)日：1994-07-12

申请号：US954309

申请日：1992-09-30

申请人： Kenji Sera

发明人： Kenji Sera

IPC分类号： H01L27/12 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L45/00 ,  H01L29/00

CPC分类号： H01L29/66757 ,  H01L29/78618

摘要： A thin film transistor having a larger ON-OFF current ratio is provided, in which a first insulating film having a first and second contact holes is formed on a substrate so as to cover a source and drain regions formed therein and a semiconductor film is formed on the first insulating film so as to be connected through the holes respectively to the source and drain regions. A second insulating film is formed on the semiconductor film and a gate electrode is formed thereon so as not be overlapped with the holes. In the offset region between each end of the gate electrode and the corresponding one of the holes, the insulation between the semiconductor film and the source and drain regions is provided by the first insulating film. This semiconductor film is weakly inverted by a drain voltage in the offset region, resulting in obtaining a leak current suppression action. The semiconductor film is preferable to be a polysilicon film.

摘要翻译： 提供一种具有较大导通截止电流比的薄膜晶体管，其中在衬底上形成具有第一和第二接触孔的第一绝缘膜，以覆盖其中形成的源极和漏极区域并形成半导体膜 在第一绝缘膜上，通过孔分别连接到源区和漏区。 在半导体膜上形成第二绝缘膜，并且在其上形成栅电极而不与孔重叠。 在栅电极的两端与相应的一个孔之间的偏移区域中，半导体膜与源极和漏极区之间的绝缘由第一绝缘膜提供。 该半导体膜在偏移区域中被漏极电压弱反转，从而获得泄漏电流抑制动作。 半导体膜优选为多晶硅膜。

公开(公告)号：US07294881B2

公开(公告)日：2007-11-13

申请号：US11047814

申请日：2005-02-02

申请人： Takahiro Korenari ,  Kenji Sera ,  Hiroshi Kanou

发明人： Takahiro Korenari ,  Kenji Sera ,  Hiroshi Kanou

IPC分类号： H01L29/76

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L23/552 ,  H01L29/7881 ,  H01L2924/0002 ,  H01L2924/00

摘要： At least either above or below a memory transistor formed on an insulating substrate, a shielding layer which has an area larger than that of the semiconductor layer of the memory transistor and has either an electromagnetic wave shielding effect or a light shielding effect or both of these is provided, and by this shielding layer, electromagnetic waves or light is prevented from entering the semiconductor layer. Or, the regional area of at least one of the gate and the charge accumulation layer of the memory transistor is made larger than the semiconductor layer to prevent electromagnetic waves or light from entering the semiconductor layer by the gate or the charge accumulation layer.

摘要翻译： 至少在绝缘基板上形成的存储晶体管的上方或下方，具有比存储晶体管的半导体层的面积大的面积的屏蔽层，具有电磁波屏蔽效应或遮光效果，或者两者兼有 并且通过该屏蔽层，防止电磁波或光进入半导体层。 或者，使存储晶体管的栅极和电荷累积层中的至少一个的区域区域比半导体层大，以防止电磁波或光通过栅极或电荷累积层进入半导体层。