公开(公告)号：US06328808B1

公开(公告)日：2001-12-11

申请号：US09543393

申请日：2000-04-05

申请人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

发明人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/4585

摘要： An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.

摘要翻译： 用于使处理室中的支撑构件上的基板对准的对准机构包括一组引导销，其从支撑构件的上表面延伸，围绕其周边等间隔开并间隔开，以在其间对准阴影环。 引导销的内表面向外倾斜以形成用于接收和对准支撑构件上的基板的倒置漏斗。 在支撑构件的上表面中的环形气体沟槽提供用于供应吹扫气体的连通并且引导围绕衬底的周边边缘的气体。 在气槽上部分延伸的引导销包括其中的槽，其通过引导销从气槽到衬底的周缘提供流体连通。 引导销还与形成在阴影环中的对准孔配合，使得当支撑构件移动到处理位置时，引导销的内表面邻接对准孔中的邻接表面并将阴影环对准支撑构件和 在基板上。 衣架构件在每个基底的处理之间支撑和对准阴影环。

公开(公告)号：US06186092B1

公开(公告)日：2001-02-13

申请号：US08914522

申请日：1997-08-19

申请人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

发明人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/4585

摘要： An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.

公开(公告)号：US20070084408A1

公开(公告)日：2007-04-19

申请号：US11381966

申请日：2006-05-05

申请人： Joseph Yudovsky ,  Tai Ngo ,  Cesar Tejamo ,  Maitreyee Mahajani ,  Brendan McDougall ,  Yi-Chiau Huang ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Adam Brailove ,  Steve Ghanayem

发明人： Joseph Yudovsky ,  Tai Ngo ,  Cesar Tejamo ,  Maitreyee Mahajani ,  Brendan McDougall ,  Yi-Chiau Huang ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Adam Brailove ,  Steve Ghanayem

IPC分类号： C23C16/00

CPC分类号： C23C16/46 ,  C23C16/45578 ,  H01L21/67109

摘要： An apparatus for batch processing of a wafer is disclosed. In one embodiment the batch processing apparatus includes a bell jar furnace having a diffuser disposed between gas inlets and the substrate positioned within the furnace to direct flows within the chamber around the perimeter of the substrate.

摘要翻译： 公开了一种用于批处理晶片的设备。 在一个实施例中，批处理设备包括钟罩式炉，其具有设置在气体入口之间的扩散器和位于炉内的基板，以引导室内围绕衬底周边的流动。

公开(公告)号：US20070084406A1

公开(公告)日：2007-04-19

申请号：US11249555

申请日：2005-10-13

申请人： Joseph Yudovsky ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Maitreyee Mahajani ,  Adam Brailove ,  Steve Ghanayem

发明人： Joseph Yudovsky ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Maitreyee Mahajani ,  Adam Brailove ,  Steve Ghanayem

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45578 ,  C23C16/46 ,  H01L21/67109

摘要： The present invention generally provides a batch processing chamber having a quartz chamber, at least one heater block, an inject assembly coupled to one side of the quartz chamber, and an exhaust assembly coupled to an opposite side of the quartz chamber. In one embodiment, the inject assembly is independently temperature controlled. In another embodiment, at least one temperature sensor is disposed outside the quartz chamber.

摘要翻译： 本发明通常提供了具有石英室，至少一个加热器块，耦合到石英腔的一侧的注射组件以及耦合到石英腔的相对侧的排气组件的批处理室。 在一个实施例中，注射组件是独立温度控制的。 在另一个实施例中，至少一个温度传感器设置在石英腔外部。

公开(公告)号：US06248176B1

公开(公告)日：2001-06-19

申请号：US09390136

申请日：1999-09-03

申请人： Joseph Yudovsky ,  Kenneth Tsai ,  Steve Ghanayem ,  Semyon Sherstinsky

发明人： Joseph Yudovsky ,  Kenneth Tsai ,  Steve Ghanayem ,  Semyon Sherstinsky

IPC分类号： C23C1600

CPC分类号： H01L21/68735

摘要： A gas delivery method and apparatus for directing a purge gas to the edge of a substrate at an angle to a linear divergence from the center of the substrate. The apparatus directs a purge gas from a supply source over a deflection surface, having one or more grooves angled relative to a linear divergence from the center of the substrate, to the edge of the substrate. Preferably, the gas is delivered to the edge of the substrate at an angle between about 10 and 90 degrees to a linear divergence from the center of the substrate.

摘要翻译： 一种气体输送方法和装置，用于将吹扫气体以与衬底中心成直线散度的角度引导到衬底的边缘。 该装置将来自供应源的净化气体引导到偏转表面上，该偏转表面具有相对于从基板的中心到基板的边缘的线性发散度成角度的一个或多个槽。 优选地，气体以约10至90度之间的角度被输送到衬底的边缘，从而与衬底的中心线性发散。

公开(公告)号：US5985033A

公开(公告)日：1999-11-16

申请号：US893769

申请日：1997-07-11

申请人： Joseph Yudovsky ,  Kenneth Tsai ,  Steve Ghanayem ,  Semyon Sherstinsky

发明人： Joseph Yudovsky ,  Kenneth Tsai ,  Steve Ghanayem ,  Semyon Sherstinsky

IPC分类号： H01L21/302 ,  C23C14/34 ,  C23C16/448 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/687 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/68735

摘要： A gas delivery apparatus for directing a flow of gas at the edge of a substrate at an angle to the radial direction of the substrate. The apparatus directs the gas from a gas orifice, and over a plurality of grooves that are angled relative to the radial direction of the substrate. Preferably, the resultant flow of gas flows at an angle of between 10 and 90 degrees relative to the radial direction of the substrate.

摘要翻译： 一种气体输送装置，用于在衬底的边缘处以与衬底的径向方向成一定角度引导气体流。 该装置引导来自气体孔口的气体以及相对于基板的径向成角度的多个凹槽。 优选地，所产生的气体流相对于衬底的径向方向以10度和90度之间的角度流动。

公开(公告)号：US06271129B1

公开(公告)日：2001-08-07

申请号：US08984438

申请日：1997-12-03

申请人： Steve Ghanayem ,  Maitreyee Mahajani

发明人： Steve Ghanayem ,  Maitreyee Mahajani

IPC分类号： H01L2144

CPC分类号： H01J37/32743 ,  C23C16/14 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32788 ,  H01J2237/3321 ,  H01J2237/3328 ,  H01L21/28556

摘要： A method for forming a refractory metal layer that features two-stage nucleation prior to bulk deposition of the same. The method includes placing a substrate in a deposition zone, flowing, into the deposition zone during a first deposition stage, a silicon source, such as a silane gas, and a tungsten source, such as tungsten-hexafluoride gas, so as to obtain a predetermined ratio of the two gases therein. During a second deposition stage, subsequent to the first deposition stage, the ratio of the two gases is varied. Specifically, in the first deposition stage there is a greater quantity of silane gas than tungsten-hexafluoride gas. In the second deposition stage there may be a greater quantity of tungsten-hexafluoride than silane.

摘要翻译： 一种形成难熔金属层的方法，其特征在于在其沉积之前具有两级成核。 该方法包括在第一沉积阶段将衬底放置在沉积区中流动到沉积区中，将诸如硅烷气体的硅源和诸如六氟化钨气体的钨源放置在基底上，以获得 其中两种气体的预定比例。 在第二沉积阶段期间，在第一沉积阶段之后，改变两种气体的比例。 具体地说，在第一沉积阶段，比六氟化钨气体有大量的硅烷气体。 在第二沉积阶段，可能比硅烷有更多的六氟化钨。

公开(公告)号：US5709772A

公开(公告)日：1998-01-20

申请号：US625485

申请日：1996-03-29

申请人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

发明人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/52 ,  C23C16/02 ,  C23C16/4405

摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

摘要翻译： 一种用于限制半导体制造工艺中的金属蚀刻后剩余残留物的装置和方法，其中将不含等离子体的含卤素气体注入到处理室中。 然后在金属沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体的残留物。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US06174373B1

公开(公告)日：2001-01-16

申请号：US09476917

申请日：2000-01-04

申请人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

发明人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC分类号： C23C1600

CPC分类号： C23C16/52 ,  C23C16/02 ,  C23C16/4405

摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

摘要翻译： 公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。 在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US06070599A

公开(公告)日：2000-06-06

申请号：US942582

申请日：1997-10-02

申请人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

发明人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/302 ,  H01L21/3065 ,  B08B3/12

CPC分类号： C23C16/52 ,  C23C16/02 ,  C23C16/4405

摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

摘要翻译： 公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。 在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。