公开(公告)号：US20070084408A1

公开(公告)日：2007-04-19

申请号：US11381966

申请日：2006-05-05

申请人： Joseph Yudovsky ,  Tai Ngo ,  Cesar Tejamo ,  Maitreyee Mahajani ,  Brendan McDougall ,  Yi-Chiau Huang ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Adam Brailove ,  Steve Ghanayem

发明人： Joseph Yudovsky ,  Tai Ngo ,  Cesar Tejamo ,  Maitreyee Mahajani ,  Brendan McDougall ,  Yi-Chiau Huang ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Adam Brailove ,  Steve Ghanayem

IPC分类号： C23C16/00

CPC分类号： C23C16/46 ,  C23C16/45578 ,  H01L21/67109

摘要： An apparatus for batch processing of a wafer is disclosed. In one embodiment the batch processing apparatus includes a bell jar furnace having a diffuser disposed between gas inlets and the substrate positioned within the furnace to direct flows within the chamber around the perimeter of the substrate.

摘要翻译： 公开了一种用于批处理晶片的设备。 在一个实施例中，批处理设备包括钟罩式炉，其具有设置在气体入口之间的扩散器和位于炉内的基板，以引导室内围绕衬底周边的流动。

公开(公告)号：US20070084406A1

公开(公告)日：2007-04-19

申请号：US11249555

申请日：2005-10-13

申请人： Joseph Yudovsky ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Maitreyee Mahajani ,  Adam Brailove ,  Steve Ghanayem

发明人： Joseph Yudovsky ,  Robert Cook ,  Yeong Kim ,  Alexander Tam ,  Maitreyee Mahajani ,  Adam Brailove ,  Steve Ghanayem

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45578 ,  C23C16/46 ,  H01L21/67109

摘要： The present invention generally provides a batch processing chamber having a quartz chamber, at least one heater block, an inject assembly coupled to one side of the quartz chamber, and an exhaust assembly coupled to an opposite side of the quartz chamber. In one embodiment, the inject assembly is independently temperature controlled. In another embodiment, at least one temperature sensor is disposed outside the quartz chamber.

摘要翻译： 本发明通常提供了具有石英室，至少一个加热器块，耦合到石英腔的一侧的注射组件以及耦合到石英腔的相对侧的排气组件的批处理室。 在一个实施例中，注射组件是独立温度控制的。 在另一个实施例中，至少一个温度传感器设置在石英腔外部。

公开(公告)号：US06328808B1

公开(公告)日：2001-12-11

申请号：US09543393

申请日：2000-04-05

申请人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

发明人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/4585

摘要： An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.

摘要翻译： 用于使处理室中的支撑构件上的基板对准的对准机构包括一组引导销，其从支撑构件的上表面延伸，围绕其周边等间隔开并间隔开，以在其间对准阴影环。 引导销的内表面向外倾斜以形成用于接收和对准支撑构件上的基板的倒置漏斗。 在支撑构件的上表面中的环形气体沟槽提供用于供应吹扫气体的连通并且引导围绕衬底的周边边缘的气体。 在气槽上部分延伸的引导销包括其中的槽，其通过引导销从气槽到衬底的周缘提供流体连通。 引导销还与形成在阴影环中的对准孔配合，使得当支撑构件移动到处理位置时，引导销的内表面邻接对准孔中的邻接表面并将阴影环对准支撑构件和 在基板上。 衣架构件在每个基底的处理之间支撑和对准阴影环。

公开(公告)号：US06186092B1

公开(公告)日：2001-02-13

申请号：US08914522

申请日：1997-08-19

申请人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

发明人： Kenneth Tsai ,  Joseph Yudovsky ,  Steve Ghanayem ,  Ken K. Lai ,  Patricia Liu ,  Toshiyuki Nakagawa ,  Maitreyee Mahajani

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/4585

摘要： An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate. The guide pins also mate with alignment bores formed in the shadow ring so that, as the support member moves into the processing position, the inner surfaces of the guide pins abut abutment surfaces in the alignment bores and align the shadow ring on the support member and over the substrate. A hanger member supports and aligns the shadow ring between processing of each substrate.

公开(公告)号：US20060156979A1

公开(公告)日：2006-07-20

申请号：US11286063

申请日：2005-11-22

申请人： Randhir Thakur ,  Steve Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Brailove ,  Nir Merry ,  Vinay Shah ,  Andreas Hegedus

发明人： Randhir Thakur ,  Steve Ghanayem ,  Joseph Yudovsky ,  Aaron Webb ,  Adam Brailove ,  Nir Merry ,  Vinay Shah ,  Andreas Hegedus

IPC分类号： H01L21/322 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45593 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67757 ,  H01L21/67781

摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

摘要翻译： 本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。 在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并且由于暴露于污染环境而最小化处理缺陷。 在一个实施例中，批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。 在另一个实施方案中，使用两个或更多个间隔室来处理多个基板，使用处理顺序中的一个或多个不成比例的长处理步骤。 本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

公开(公告)号：US06271129B1

公开(公告)日：2001-08-07

申请号：US08984438

申请日：1997-12-03

申请人： Steve Ghanayem ,  Maitreyee Mahajani

发明人： Steve Ghanayem ,  Maitreyee Mahajani

IPC分类号： H01L2144

CPC分类号： H01J37/32743 ,  C23C16/14 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32788 ,  H01J2237/3321 ,  H01J2237/3328 ,  H01L21/28556

摘要： A method for forming a refractory metal layer that features two-stage nucleation prior to bulk deposition of the same. The method includes placing a substrate in a deposition zone, flowing, into the deposition zone during a first deposition stage, a silicon source, such as a silane gas, and a tungsten source, such as tungsten-hexafluoride gas, so as to obtain a predetermined ratio of the two gases therein. During a second deposition stage, subsequent to the first deposition stage, the ratio of the two gases is varied. Specifically, in the first deposition stage there is a greater quantity of silane gas than tungsten-hexafluoride gas. In the second deposition stage there may be a greater quantity of tungsten-hexafluoride than silane.

摘要翻译： 一种形成难熔金属层的方法，其特征在于在其沉积之前具有两级成核。 该方法包括在第一沉积阶段将衬底放置在沉积区中流动到沉积区中，将诸如硅烷气体的硅源和诸如六氟化钨气体的钨源放置在基底上，以获得 其中两种气体的预定比例。 在第二沉积阶段期间，在第一沉积阶段之后，改变两种气体的比例。 具体地说，在第一沉积阶段，比六氟化钨气体有大量的硅烷气体。 在第二沉积阶段，可能比硅烷有更多的六氟化钨。

公开(公告)号：US5709772A

公开(公告)日：1998-01-20

申请号：US625485

申请日：1996-03-29

申请人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

发明人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/52 ,  C23C16/02 ,  C23C16/4405

摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

摘要翻译： 一种用于限制半导体制造工艺中的金属蚀刻后剩余残留物的装置和方法，其中将不含等离子体的含卤素气体注入到处理室中。 然后在金属沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体的残留物。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US06174373B1

公开(公告)日：2001-01-16

申请号：US09476917

申请日：2000-01-04

申请人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

发明人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC分类号： C23C1600

CPC分类号： C23C16/52 ,  C23C16/02 ,  C23C16/4405

摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

摘要翻译： 公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。 在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US06070599A

公开(公告)日：2000-06-06

申请号：US942582

申请日：1997-10-02

申请人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

发明人： Steve Ghanayem ,  Moris Kori ,  Maitreyee Mahajani ,  Ravi Rajagopalan

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/302 ,  H01L21/3065 ,  B08B3/12

CPC分类号： C23C16/52 ,  C23C16/02 ,  C23C16/4405

摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

摘要翻译： 公开了一种用于限制在半导体制造工艺中蚀刻金属后残留的残留物的设备和方法，例如通过用含卤素气体钝化晶片的表面来蚀刻钨层以形成钨插塞。 在将金属层沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体。 曝光可能发生在与金属沉积相同的室中，或者在不同的室中。 晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

公开(公告)号：US20060286819A1

公开(公告)日：2006-12-21

申请号：US11157533

申请日：2005-06-21

申请人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/02 ,  C23C16/345 ,  C23C16/482 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。