Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure
    1.
    发明授权
    Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure 失效
    固态成像装置及其制造方法,成像装置及防反射结构的制造方法

    公开(公告)号:US08685856B2

    公开(公告)日:2014-04-01

    申请号:US12728448

    申请日:2010-03-22

    IPC分类号: H01L31/0236

    摘要: A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

    摘要翻译: 防反射结构的制造方法包括以下步骤:在基板的表面上形成分散有微粒的树脂膜; 通过在树脂膜中的微粒子作为掩模蚀刻树脂膜,同时逐渐蚀刻微粒,从而在树脂膜上形成突起虚拟图案; 以及通过在其上形成有突起虚拟图案的树脂膜与衬底的表面一起蚀刻而在衬底的表面上形成突起图案,并且转印形成在树脂膜的表面上的突起假图形的表面形状 到基底的表面。

    LIQUID DISCHARGING APPARATUS AND CONTROL METHOD THEREOF
    3.
    发明申请
    LIQUID DISCHARGING APPARATUS AND CONTROL METHOD THEREOF 有权
    液体排放装置及其控制方法

    公开(公告)号:US20120223981A1

    公开(公告)日:2012-09-06

    申请号:US13410064

    申请日:2012-03-01

    IPC分类号: B41J29/38

    CPC分类号: B41J2/175 B41J2/16505

    摘要: When filling a printing head with ink, ink in a sub-tank is circulated through a forward path port, a forward path, the printing head, a return path, a return path port, and the sub-tank by pumping ink from the forward path port side to the printing head side by a circulation pump in a state where a plurality of nozzles is sealed by bringing a contact member of a capping device into contact with a nozzle formation surface. Thereafter, sealing of the plurality of nozzles by the capping device is released while pressurizing the sub-tank by a pressure adjusting device.

    摘要翻译: 当用墨水填充打印头时,副罐中的墨水通过向前通路端口,前进路径,打印头,返回路径,返回路径端口和副罐循环通过从前向泵送墨水 通过使封盖装置的接触构件与喷嘴形成面接触而在多个喷嘴被密封的状态下通过循环泵进入打印头侧。 此后,通过压力调节装置对通过封盖装置的多个喷嘴的密封被释放,同时对副罐进行加压。

    Image forming apparatus, image forming system, image forming method, computer-readable medium and computer data signal
    4.
    发明授权
    Image forming apparatus, image forming system, image forming method, computer-readable medium and computer data signal 有权
    图像形成装置,图像形成系统,图像形成方法,计算机可读介质和计算机数据信号

    公开(公告)号:US07997492B2

    公开(公告)日:2011-08-16

    申请号:US12121882

    申请日:2008-05-16

    IPC分类号: G06K19/06

    摘要: An image forming apparatus includes a receiving unit, an image forming unit, a determining unit, an analyzing unit and a control unit. The receiving unit receives image data. The image forming unit performs a predetermined image forming process based on the image data received by the receiving unit. The determining unit determines as to whether or not the image data contains a barcode pattern. When the determining unit determines that the image data contains the barcode pattern, the analyzing unit analyzes as to whether a drawing direction of the barcode pattern is a vertical direction or a horizontal direction. The control unit that controls, based on an analyzing result of the analyzing unit, the predetermined image forming process being performed for the barcode pattern by the image forming unit.

    摘要翻译: 图像形成装置包括接收单元,图像形成单元,确定单元,分析单元和控制单元。 接收单元接收图像数据。 图像形成单元基于由接收单元接收的图像数据执行预定图像形成处理。 确定单元确定图像数据是否包含条形码图案。 当确定单元确定图像数据包含条形码图形时,分析单元分析条形码图形的绘制方向是垂直方向还是水平方向。 所述控制单元基于所述分析单元的分析结果来控制由所述图像形成单元对所述条形码图案执行的所述预定图像形成处理。

    PATTERN CORRECTION METHOD, EXPOSURE MASK, MANUFACTURING METHOD OF EXPOSURE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    5.
    发明申请
    PATTERN CORRECTION METHOD, EXPOSURE MASK, MANUFACTURING METHOD OF EXPOSURE MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
    图案校正方法,曝光掩模,曝光掩模的制造方法和半导体器件的制造方法

    公开(公告)号:US20100183960A1

    公开(公告)日:2010-07-22

    申请号:US12688039

    申请日:2010-01-15

    IPC分类号: G03F1/00 G03F7/20

    摘要: A pattern correction method includes: a correction step of performing pattern correction on a semiconductor circuit pattern having plural transistors as component elements; an order of priority recognition step of recognizing an order of priority set with respect to the plural transistors prior to the pattern correction at the correction step; and a condition adjustment step of adjusting correction conditions for the pattern correction with reference to the transistor having a high priority recognized at the order of priority recognition step in the pattern correction at the correction step.

    摘要翻译: 图案校正方法包括:对具有多个晶体管作为元件的半导体电路图案执行图案校正的校正步骤; 优先级识别步骤的顺序,在所述校正步骤中识别在所述图案校正之前相对于所述多个晶体管设定的优先级顺序; 以及条件调整步骤,参照在校正步骤中的图案校正中的以优先级识别步骤的顺序被识别的具有高优先级的晶体管来调整图案校正的校正条件。

    OPTICAL PROXIMITY CORRECTION METHOD, OPTICAL PROXIMITY CORRECTION APPARATUS, AND OPTICAL PROXIMITY CORRECTION PROGRAM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, DESIGN RULE FORMULATING METHOD, AND OPTICAL PROXIMITY CORRECTION CONDITION CALCULATING METHOD
    6.
    发明申请
    OPTICAL PROXIMITY CORRECTION METHOD, OPTICAL PROXIMITY CORRECTION APPARATUS, AND OPTICAL PROXIMITY CORRECTION PROGRAM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, DESIGN RULE FORMULATING METHOD, AND OPTICAL PROXIMITY CORRECTION CONDITION CALCULATING METHOD 有权
    光学近似校正方法,光学近似校正装置和光学近似校正程序,制造半导体器件的方法,设计规则方法和光学近似校正条件计算方法

    公开(公告)号:US20080263483A1

    公开(公告)日:2008-10-23

    申请号:US12026604

    申请日:2008-02-06

    IPC分类号: G06F17/50 H01L21/66

    摘要: In the present invention, there is provided an optical proximity correction method including steps of: extracting a gate length distribution of a gate from a pattern shape of the gate of a transistor to be formed on a wafer; calculating electric characteristics of the gate; determining a gate length of a rectangular gate having electric characteristics equivalent to the calculated electric characteristics; calculating a corrective coefficient for describing an associated relationship between a statistical value of the extracted gate length distribution and the determined gate length; extracting a gate length distribution of a gate of a transistor by printing the design pattern, and calculating a gate length distribution representative value from the statistical value of the gate length distribution using the calculated corrective coefficient; and correcting the design pattern so that the calculated gate length distribution representative value will be a specification value.

    摘要翻译: 在本发明中,提供了一种光学邻近校正方法,包括以下步骤:从要形成在晶片上的晶体管的栅极的图案形状提取栅极的栅极长度分布; 计算门的电特性; 确定具有与所计算的电特性相当的电特性的矩形栅极的栅极长度; 计算用于描述所提取的栅极长度分布的统计值与所确定的栅极长度之间的关联关系的校正系数; 通过印刷设计图案来提取晶体管的栅极的栅极长度分布,以及使用计算的校正系数从栅极长度分布的统计值计算栅极长度分布代表值; 并且校正设计图案,使得计算的栅极长度分布代表值将是规格值。

    Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same
    7.
    发明授权
    Complementary masks and method of fabrication of same, exposure method, and semiconductor device and method of production of same 失效
    互补掩模及其制造方法,曝光方法和半导体器件及其制造方法

    公开(公告)号:US06998201B2

    公开(公告)日:2006-02-14

    申请号:US10466041

    申请日:2002-11-12

    申请人: Kaoru Koike

    发明人: Kaoru Koike

    IPC分类号: G03F9/00

    CPC分类号: G03F1/20 Y10S430/143

    摘要: A complementary mask has a plurality of pattern forming regions 34a, 34 having arranged on them complementary patterns 26, 28 obtained by dividing first circuit patterns into complementary patterns 26, 28 complementary with each other and formed by openings. The complementary patterns 26, 28 are arranged in the pattern forming regions 34a, 34b so that pattern densities of the pattern forming regions 34a, 34b become substantially the same.

    摘要翻译: 互补掩模具有多个图案形成区域34a,34,其布置有互补图案26,28,所述互补图案26,28通过将第一电路图案分成彼此互补并由开口形成的互补图案26,28而获得。 互补图案26,28布置在图案形成区域34a,34b中,使得图案形成区域31a,34b的图案密度变得基本相同。

    Mask pattern correction method, semiconductor device manufacturing method, mask manufacturing method and mask
    8.
    发明申请
    Mask pattern correction method, semiconductor device manufacturing method, mask manufacturing method and mask 失效
    掩模图案校正方法,半导体器件制造方法,掩模制造方法和掩模

    公开(公告)号:US20050124078A1

    公开(公告)日:2005-06-09

    申请号:US10509230

    申请日:2003-03-20

    CPC分类号: G03F1/20 H01J2237/31794

    摘要: A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function.

    摘要翻译: 能够通过重力防止图案的位置偏离掩模的位置偏移的掩模图案校正方法,能够以高精度形成精细图案的半导体器件的掩模制造方法,掩模和制造方法, 提供。 掩模图案校正方法,掩模制造方法,由此制备的掩模和使用掩模的半导体器件的制造方法包括:当支撑具有标记的第一薄膜时,创建指示多个标记的位置的第一位置数据的步骤 在第一面向上方的状态下,在第二面向上方的状态下支撑第一薄膜时,形成指示标记位置的第二位置数据的步骤,获得将第一位置数据变换为 第二位置数据,以及通过使用传递函数的反函数将掩模图案校正为形成在第二薄膜上的曝光光束透射部分的形状的步骤。

    Liquid feed valve unit and liquid ejection device
    9.
    发明授权
    Liquid feed valve unit and liquid ejection device 有权
    液体进料阀单元和液体喷射装置

    公开(公告)号:US09039147B2

    公开(公告)日:2015-05-26

    申请号:US13293238

    申请日:2011-11-10

    IPC分类号: B41J2/175

    摘要: A liquid feed valve unit is configured to switch between a releasing mode for forcibly opening a valve and a blocking mode for closing the valve, and the valve can therefore be opened and closed in a short time as needed. Since the releasing mode is implemented by pushing the peripheral part and the pressure-receiving part of the flexible member, the flexible member can be prevented from flexing toward the outside of the liquid accommodating chamber even in the case that the pressure-receiving part is pushed. In this case, since a residual pressure can be prevented from forming in the liquid accommodating chamber, there is no need to suspend operation, and it is possible to immediately proceed to the next operation. A fast-operating liquid feed valve unit can thereby be obtained.

    摘要翻译: 液体供给阀单元被配置为在用于强制打开阀的释放模式和用于关闭阀的阻塞模式之间切换,并且因此阀可以在短时间内根据需要打开和关闭。 由于通过推动柔性构件的周边部分和受压部分来实现释放模式,所以即使在压力接收部被推动的情况下,也可以防止柔性构件朝向液体容纳室的外部弯曲 。 在这种情况下,由于可以防止在液体容纳室中形成残留压力,所以不需要暂停操作,并且可以立即进行下一个操作。 由此可以获得快速操作的液体供给阀单元。

    Liquid ejecting apparatus and method of cleaning liquid ejecting head of liquid ejecting apparatus
    10.
    发明授权
    Liquid ejecting apparatus and method of cleaning liquid ejecting head of liquid ejecting apparatus 有权
    液体喷射装置及清洗液体喷射装置的喷液头的方法

    公开(公告)号:US08919917B2

    公开(公告)日:2014-12-30

    申请号:US12862256

    申请日:2010-08-24

    摘要: A liquid ejecting apparatus provided with N (N≧2) liquid ejecting heads which eject liquid, the liquid ejecting apparatus including a supply path through which liquid is supplied from a tank to the N liquid ejecting heads, a circulation path through which liquid is returned from the liquid ejecting heads to the tank, N opening and closing valves that are installed for each liquid ejecting head on at least one of the supply path and the circulation path, and a liquid sending unit that applies a force sending the liquid from the tank toward the liquid ejecting heads. M opening and closing valves corresponding to M (M

    摘要翻译: 一种液体喷射装置,其具有排出液体的N(N≥2)个液体喷射头,该液体喷射装置包括供液路径,通过该供给路径将液体从罐供给至N个液体喷射头,通过该循环路径返回液体 从所述液体喷射头到所述罐,在所述供给路径和所述循环路径中的至少一个上为每个喷液头安装的N个开闭阀,以及施加从所述箱体送出液体的力的液体送出单元 朝向液体喷射头。 选择对应于选择为清洁对象的M(M