Backfilled, self-assembled monolayers and methods of making same
    2.
    发明申请
    Backfilled, self-assembled monolayers and methods of making same 失效
    回填,自组装单层及其制备方法

    公开(公告)号:US20070141364A1

    公开(公告)日:2007-06-21

    申请号:US11315646

    申请日:2005-12-21

    IPC分类号: B32B9/04

    摘要: Backfilled, self-assembled monolayers and methods of making the same are disclosed. The self-assembled monolayer comprises at least one functional organosilane species and a substantially random dispersion of at least one backfilling organosilane species among the functional organosilane species, wherein the functional and backfilling organosilane species have been sequentially deposited on a substrate. The method comprises depositing sequentially a first organosilane species followed by a backfilling organosilane species, and employing a relaxation agent before or during deposition of the backfilling organosilane species, wherein the first and backfilling organosilane species are substantially randomly dispersed on a substrate.

    摘要翻译: 公开了回填的自组装单层及其制备方法。 所述自组装单层在所述功能性有机硅烷物质中包含至少一种功能性有机硅烷物质和至少一种回填有机硅烷物质的基本无规分散体,其中所述功能性和回填有机硅烷物质已经顺序地沉积在基材上。 该方法包括依次沉积第一有机硅烷物质,然后沉积有机硅烷物质,并在回填有机硅烷物质沉积之前或期间使用松弛剂,其中第一和回填的有机硅烷物质基本上随机分散在基材上。

    Process for modifying dielectric materials
    3.
    发明申请
    Process for modifying dielectric materials 审中-公开
    电介质材料改性方法

    公开(公告)号:US20070054501A1

    公开(公告)日:2007-03-08

    申请号:US11210546

    申请日:2005-08-23

    IPC分类号: H01L21/31

    CPC分类号: H01L21/3105 H01L21/02101

    摘要: The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, e.g., by contact angles at the liquid/surface interface.

    摘要翻译: 本发明涉及一种用于改性材料的方法,包括例如与通过诸如等离子体蚀刻加工的制造工艺损坏的电子基板,半导体芯片,晶片等相关的介电材料。 所描述的方法提高了例如通过杨氏模量测量的结构完整性,以及例如通过液体/表面界面处的接触角测量的疏水性。