摘要:
A semiconductor apparatus for generating an internal voltage includes a control code output block and an internal voltage generation block. The control code output block is configured to output a variable code having a code value corresponding to a voltage level of an internal voltage. The internal voltage generation block is configured to compare the variable code to a setting code and controls the voltage level of the internal voltage according to the comparison.
摘要:
A semiconductor integrated circuit includes a frequency determining unit configured to determine an operational speed of the semiconductor integrated circuit and to generate a frequency region signal; a duty cycle control unit configured to detect a duty cycle of a DLL clock and to generate a duty cycle control signal; a duty cycle correcting unit configured to generate a corrected clock by correcting a duty cycle of an input clock in response to the frequency region signal and in response to the duty cycle control signal; and a DLL (Delay Locked Loop) circuit configured to generate the DLL clock by controlling a phase of the corrected clock.
摘要:
A method of controlling a power control circuit includes enabling a power cutoff signal when a delay locking operation of a Delay Locked Loop (DLL) circuit is completed, disabling the power cutoff signal for a predetermined time, and detecting a phase difference between a reference clock and a feedback clock to re-determine, on the basis of the detection result, whether or not to enable the power cutoff signal.
摘要:
A delay locked loop (DLL) circuit includes a delay line configured to generate a delay clock signal by delaying a reference clock signal in response to a delay control signal, the delay line having two or more initial activation points, wherein the initial activation points are selected according to an initial value of the delay control signal; a delay compensating unit configured to generate a feedback clock signal by delaying the delay clock signal for a predetermined time; a phase detecting unit configured to generate a phase detection signal by comparing a phase of the reference clock signal to a phase of the feedback clock signal; and a delay control unit configured to generate the delay control signal in response to the phase detection signal.
摘要:
A delay-locked loop apparatus includes at least a rising-clock delay-locked circuit, a falling-clock delay-locked circuit, and a duty cycle compensation circuit. The rising-clock delay-locked circuit detects the phase difference between a first clock inputted as a reference clock and a second clock obtained by replica-delaying the first clock, and then delay-locks the first clock and outputs a rising clock. The falling-clock delay-locked circuit detects the phase difference between an inverted clock of the first clock and the rising clock after a delay locking operation with respect to the rising clock, delay-locks an inverted clock of the first clock and outputs a falling clock. The duty cycle compensation circuit compensates duty cycles of the delay-locked rising clock and falling clock, and the falling-clock delay-locked circuit includes a divider for separately dividing the inverted clock and the delay-locked rising clock.
摘要:
A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.
摘要:
A delay locked loop (DLL) circuit includes a duty cycle correcting unit configured to correct a duty cycle of a reference clock signal in response to a duty cycle correction signal and generate a correction clock signal. A feedback loop of the DLL circuit performs a delay lock operation on the correction clock signal and generates an output clock signal. A first duty cycle detecting unit detects a duty cycle of the correction clock signal and generates a first detection signal and a second duty cycle detecting unit detects a duty cycle of the output clock signal and generates a second detection signal. Finally, a duty cycle control unit generates the duty cycle correction signal in response to the first detection signal and the second detection signal to perform the duty cycle correction.
摘要:
A semiconductor integrated circuit is provided. The semiconductor integrated circuit includes: a delay locked loop (DLL) output block configured to delay an input clock signal by a predetermined time in response to a plurality of delay control signals and provide a DLL clock signal; a locking control block configured to compare a phase of a reference clock signal and a phase of a feedback clock signal, and synchronize the phase of the reference clock signal and the phase of the feedback clock signal in response to the plurality of delay control signals; and a locking detection block configured to detect whether the phase of the reference clock signal and the phase of the feedback clock signal are synchronized and the DLL clock signal is locked, wherein, when the DLL clock signal is locked, the locking control block provides the reference clock signal, which is obtained by dividing the input clock signal by n (where n is a natural number equal to or greater than 2), as an internal DLL clock signal.
摘要:
A delay locked loop (DLL) apparatus includes a first delay unit converting a reference clock into a rising clock. A second delay unit converts the reference clock into a falling clock, and a replica delay unit replica-delays the rising clock. A first phase detector compares the phases of the reference clock and the delayed rising clock to output a first detection signal corresponding to the compared phases. A controller synchronizes the rising edge of the rising clock with the rising edge of the reference clock according to the first detection signal of the first phase detector. A second phase detector compares the phases of the synchronized rising clock and the synchronization clock to output a second detection signal corresponding to the compared phases. The DLL apparatus compensates for a skew between an external clock and data and between external and internal clocks by employing a single replica delay unit.
摘要:
A semiconductor memory apparatus having a clock signal generation circuit and a data output circuit is presented. The apparatus includes a delay locked loop (DLL), a phase locked loop (PLL), a frequency discrimination unit, and a data output buffer. The DLL circuit is configured to negatively delay a clock signal to generate a DLL clock signal. The PLL circuit is configured to receive the DLL clock signal to generate a control voltage in response to a frequency of the DLL clock signal and to generate a PLL clock signal of a frequency corresponding to a level of the control voltage. The frequency discrimination unit is configured to discriminate a frequency of the DLL clock signal in accordance with the level of the control voltage to generate a frequency discrimination signal. The data output buffer is configured to receive the DLL clock signal or the PLL clock signal to buffer output data signals.