公开(公告)号：US08648315B1

公开(公告)日：2014-02-11

申请号：US13585822

申请日：2012-08-14

申请人： Kim L. Hailey ,  Robert O. Conn

发明人： Kim L. Hailey ,  Robert O. Conn

IPC分类号： G21K1/02

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/08 ,  H01J37/09

摘要： An ion accelerator includes a plasma ion source and a micro-collimator. The micro-collimator has a plurality of channels. The length-to-width ratio of each channel is greater than five, and the channel width is less than one micron. The ion source is coupled to the micro-collimator such that ions from the ion source pass into the channels, and then through the plurality of channels. In one specific example, the ion source produces cold ions that have only a small amount of lateral momentum. Each channel is an individually gated acceleration channel that is formed into a solid dielectric material. Ions are accelerated down the acceleration channel. The ion accelerator forms a part of an ionjet head of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.

摘要翻译： 离子加速器包括等离子体离子源和微型准直器。 微型准直仪具有多个通道。 每个通道的长宽比大于5，通道宽度小于1微米。 离子源耦合到微型准直器，使得离子源的离子进入通道，然后通过多个通道。 在一个具体实例中，离子源产生仅具有少量横向动量的冷离子。 每个通道是形成为固体电介质材料的独立门控加速通道。 离子加速通道加速。 离子加速器形成直接写入晶片（DWOW）打印系统的离子喷墨头的一部分。 DWOW打印系统在半导体处理中是有用的，因为它可以在一分钟内直接将图像写入到300mm直径的晶片上。

公开(公告)号：US08564225B1

公开(公告)日：2013-10-22

申请号：US13585832

申请日：2012-08-15

申请人： Kim L. Hailey ,  Robert O. Conn

发明人： Kim L. Hailey ,  Robert O. Conn

IPC分类号： H05H7/00

CPC分类号： H01J37/302 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/08 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0432 ,  H01J2237/0437 ,  H01J2237/04735 ,  H01J2237/061 ,  H01J2237/0802 ,  H01J2237/0815 ,  H01J2237/20228 ,  H01J2237/30416 ,  H01J2237/31749 ,  H01J2237/31755 ,  H01J2237/31766 ,  H05H9/042

摘要： An accelerator assembly includes an acceleration channel that passes in a straight line through a plurality of accelerator cells. Each cell includes an acceleration region and a drift region. The drift region includes a high voltage plate and a grid electrode, where the grid electrode is disposed between the high voltage plate and the channel. In each cell, a large DC voltage is present on the high voltage plate. A voltage on the grid electrode is controlled such that at a first time an ion in the channel is attracted toward the high voltage plate, and such that at a second time the ion is shielded and is not attracted toward the high voltage plate. In one specific example, the assembly is part of a Direct Write On Wafer (DWOW) printing system that can direct write an image onto a 300 mm diameter wafer in one minute.

摘要翻译： 加速器组件包括加速通道，其以直线通过多个加速器单元。 每个单元包括加速区和漂移区。 漂移区域包括高压板和栅格电极，其中格栅电极设置在高压板和通道之间。 在每个电池中，在高压板上存在大的直流电压。 控制栅电极上的电压，使得第一次将通道中的离子吸引到高压板，并且在第二时间离子被屏蔽并且不被吸引到高压板。 在一个具体的示例中，组件是直接写入晶圆（DWOW）打印系统的一部分，可以在一分钟内直接将图像写入到300mm直径的晶片上。

公开(公告)号：US08541757B1

公开(公告)日：2013-09-24

申请号：US13585829

申请日：2012-08-14

申请人： Kim L. Hailey ,  Robert O. Conn

发明人： Kim L. Hailey ,  Robert O. Conn

IPC分类号： H01H1/54

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/0802 ,  H01J2237/31755

摘要： An assembly includes a cold ion source and a chip. The cold ion source is fixed to the chip so that ions from the ion source can enter an acceleration channel in the chip. In one specific example, the ion source includes an ion exchange membrane that produces cold ions in that the ions as produced have an energy of less than 30 eV. The chip includes a substrate (such as a semiconductor substrate or a glass substrate) and a dielectric layer disposed on substrate, where the acceleration channel is a channel formed into the dielectric layer. In one specific example, the assembly is part of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.

摘要翻译： 组件包括冷离子源和芯片。 冷离子源固定在芯片上，使得离子源的离子能够进入芯片中的加速通道。 在一个具体实例中，离子源包括产生冷离子的离子交换膜，因为产生的离子具有小于30eV的能量。 该芯片包括衬底（诸如半导体衬底或玻璃衬底）以及设置在衬底上的电介质层，其中加速通道是形成在电介质层中的通道。 在一个具体示例中，组件是直接写入晶圆（DWOW）打印系统的一部分。 DWOW打印系统在半导体处理中是有用的，因为它可以在一分钟内直接将图像写入到300mm直径的晶片上。

公开(公告)号：US08519644B1

公开(公告)日：2013-08-27

申请号：US13585833

申请日：2012-08-15

申请人： Kim L. Hailey ,  Robert O. Conn

发明人： Kim L. Hailey ,  Robert O. Conn

IPC分类号： H04H7/00

CPC分类号： H05H7/00 ,  H01L24/01 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05H7/06 ,  H05H9/00 ,  H05H15/00 ,  H01L2924/00

摘要： An accelerator assembly includes a first chip and a second chip. An acceleration channel is formed into a surface of a first side of the first chip. The first side of the first chip is covalently bonded to a first side of the second chip such that the channel is a tubular void between the first and second chips. The channel has a tubular inside sidewall surface, substantially no portion of which is a metal surface. The channel has length-to-width ratio greater than five, and a channel width less than one micron. There are many substantially identical channels that extend in parallel between the first and second chips. In one specific example, the assembly is part of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.

摘要翻译： 加速器组件包括第一芯片和第二芯片。 加速通道形成在第一芯片的第一侧的表面上。 第一芯片的第一侧共价键合到第二芯片的第一侧，使得通道是第一和第二芯片之间的管状空隙。 通道具有管状内侧壁表面，其基本上没有其一部分是金属表面。 通道的长宽比大于5，通道宽度小于1微米。 在第一和第二芯片之间并行延伸有许多基本相同的通道。 在一个具体示例中，组件是直接写入晶圆（DWOW）打印系统的一部分。 DWOW打印系统在半导体处理中是有用的，因为它可以在一分钟内直接将图像写入到300mm直径的晶片上。