公开(公告)号：US11956959B2

公开(公告)日：2024-04-09

申请号：US17328030

申请日：2021-05-24

Applicant: Kioxia Corporation

Inventor： Jun Fujiki ,  Shinya Arai ,  Kotaro Fujii

IPC: H10B43/27 ,  H01L21/768 ,  H01L27/07 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/27 ,  H01L21/76897 ,  H01L27/0727 ,  H10B43/35 ,  H10B43/40

Abstract: A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.

公开(公告)号：US11672117B2

公开(公告)日：2023-06-06

申请号：US17143632

申请日：2021-01-07

Applicant: Kioxia Corporation

Inventor： Kotaro Fujii ,  Jun Fujiki ,  Shinya Arai

IPC: H10B43/10 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11575 ,  H01L27/11573

CPC classification number: H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.