公开(公告)号：US12002777B2

公开(公告)日：2024-06-04

申请号：US17461550

申请日：2021-08-30

Applicant: KIOXIA CORPORATION

Inventor： Kotaro Fujii ,  Shinya Watanabe

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05149 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer.

公开(公告)号：US11956959B2

公开(公告)日：2024-04-09

申请号：US17328030

申请日：2021-05-24

Applicant: Kioxia Corporation

Inventor： Jun Fujiki ,  Shinya Arai ,  Kotaro Fujii

IPC: H10B43/27 ,  H01L21/768 ,  H01L27/07 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B43/27 ,  H01L21/76897 ,  H01L27/0727 ,  H10B43/35 ,  H10B43/40

Abstract: A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.

公开(公告)号：US11672117B2

公开(公告)日：2023-06-06

申请号：US17143632

申请日：2021-01-07

Applicant: Kioxia Corporation

Inventor： Kotaro Fujii ,  Jun Fujiki ,  Shinya Arai

IPC: H10B43/10 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11575 ,  H01L27/11573

CPC classification number: H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.