公开(公告)号：US20230247912A1

公开(公告)日：2023-08-03

申请号：US18133532

申请日：2023-04-12

Applicant: Kioxia Corporation

Inventor： Takao OCHIAI ,  Kazuhiro TOMIOKA

IPC: H10N50/10 ,  G11C11/16 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.

公开(公告)号：US20220293676A1

公开(公告)日：2022-09-15

申请号：US17471989

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Kazuhiro TOMIOKA

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device includes a bottom electrode, a stacked structure provided on the bottom electrode, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a first sidewall insulating layer provided on a sidewall of the bottom electrode and containing a predetermined element and oxygen (O), and a second sidewall insulating layer provided on a sidewall of the stacked structure and containing the predetermined element and oxygen (O).

公开(公告)号：US20210288243A1

公开(公告)日：2021-09-16

申请号：US17198330

申请日：2021-03-11

Applicant: Kioxia Corporation

Inventor： Takao OCHIAI ,  Kazuhiro TOMIOKA

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16

Abstract: According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.

公开(公告)号：US20230284537A1

公开(公告)日：2023-09-07

申请号：US17884790

申请日：2022-08-10

Applicant: Kioxia Corporation

Inventor： Kazuhiro TOMIOKA ,  Kazuya SAWADA

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: According to one embodiment, a memory device includes a memory element provided above a substrate in a first direction perpendicular to a first surface of the substrate; a switching element provided between the substrate and the memory element; and a first layer provided between the memory element and the switching element. The first layer includes at least one selected from the group including boron, carbon, silicon, magnesium, aluminum, scandium, titanium, vanadium, gallium, germanium, yttrium, zirconium, niobium, molybdenum, palladium, silver, hafnium, tantalum, tungsten, iridium, and platinum. The first layer includes an air gap.

公开(公告)号：US20230071013A1

公开(公告)日：2023-03-09

申请号：US17691652

申请日：2022-03-10

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Toshihiko NAGASE ,  Kenichi YOSHINO ,  Kazuhiro TOMIOKA ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Hisanori AIKAWA ,  Taichi IGARASHI

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.