Semiconductor memory cell and semiconductor memory device
    4.
    发明授权
    Semiconductor memory cell and semiconductor memory device 有权
    半导体存储单元和半导体存储器件

    公开(公告)号:US07507995B2

    公开(公告)日:2009-03-24

    申请号:US11447931

    申请日:2006-06-07

    IPC分类号: H01L29/10

    摘要: An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.

    摘要翻译: 形成具有线状凹部的绝缘膜,通过沉积在其上形成半导体膜。 半导体膜用激光照射以熔化半导体膜,将熔融的半导体注入凹部,结晶化。 这使得伴随结晶的变形或应力集中在除了凹部之外的其它区域上。 蚀刻掉该晶体半导体膜的表面,从而在凹部形成从侧面被凹部的侧壁覆盖的结晶半导体膜,并且与半晶不具有其他晶界。 具有该晶体半导体膜作为其沟道区的TFT和存储TFT高度可靠,具有高的场效应迁移率,并且特性波动较小。 因此,可以获得能高速运转的高度可靠的半导体存储器件。

    Semiconductor device and manufacturing method therefor

    公开(公告)号:US20050205869A1

    公开(公告)日:2005-09-22

    申请号:US11107822

    申请日:2005-04-18

    摘要: To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.