摘要:
A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate.
摘要:
The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.
摘要:
The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.
摘要:
To provide a semiconductor device including an RFID which can transmit and receive individual information without checking of the remaining charge of a battery or a replacing operation of the battery in accordance with deterioration over time of the battery for driving, and can maintain an excellent state for transmission and reception of individual information even when power of a radio wave or an electromagnetic wave from outside is insufficient. A battery (also described as a secondary battery) is provided as a power supply for supplying power to the RFID. Then, when power which is obtained from a signal received from outside is larger than predetermined power, its surplus power is stored in the battery; and when the power which is obtained from the signal received from outside is smaller than the predetermined power, power which is obtained from the battery is used for the power for driving.
摘要:
A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off.
摘要:
The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.
摘要:
A digital driver for display devices which can prevent the delay of digital data and the extended transition time of the digital data, and thus can make good display, and a display device including the above-mentioned digital driver are disclosed. The digital driver according to the present invention is constituted in such a manner that, by successively inputting digital data to a shift register, the digital data are shifted in the shift register, and the resulting output is sent out to latch circuits. Since the digital data are directly inputted to the shift register, the distance over which the data lines are laid around can be shortened, the increase in load due to the laying-around of the data lines which has so far been a problem can be prevented, and the delay of the digital data and the extended transition time of the digital data can be prevented.
摘要:
In a display device of the active matrix type, for displaying images based on different signals write control circuits as provided in a source side driver circuit and a gate line side driver circuit are operable to selectively supply output signals of shift registers to a source line and a gate line. Whereby, it becomes possible to render the non-display section of an image clearer or visually distinguishable, which in turn leads to capability of successful execution of images with excellent quality.
摘要:
In an active matrix liquid crystal display device, the driver of a gate signal line is provided with a low-supply-voltage drive section and a high-supply-voltage drive section. A level shifter circuit in the high-supply-voltage drive section is made up of two CMOS circuits, to which a supply voltage Vdd2 (high-voltage power supply) is applied. Also, to two n-channel TFWs Tr3 and Tr7 in the level shifter circuit is applied a bias voltage Vdd1 (low-voltage power supply) which is a supply voltage different from the above supply voltage. This structure can prevent a high load from being exerted on only one n-channel TFT, thereby being capable of making the withstand voltage high.
摘要:
An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.