公开(公告)号：US20110266655A1

公开(公告)日：2011-11-03

申请号：US13142544

申请日：2009-12-08

申请人： Kiyoshi Mitani ,  Tsuyoshi Ohtsuki ,  Toru Takahashi ,  Wei Feig Qu

发明人： Kiyoshi Mitani ,  Tsuyoshi Ohtsuki ,  Toru Takahashi ,  Wei Feig Qu

IPC分类号： H01L21/301 ,  H01L29/06

CPC分类号： H01L21/76259 ,  H01L21/0203 ,  H01L21/02032 ,  H01L27/1214 ,  H01L27/1266

摘要： A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.

摘要翻译： 一种制造具有多层膜的半导体晶片的制造方法，其特征在于，在半导体装置的制造中，通过将表面部分变为多孔层，在半导体晶片的表面形成多孔层，在表面形成半导体膜 的多孔层，以制造具有多层膜的半导体晶片，在半导体膜上制造器件，并且通过沿着多孔层分层半导体膜来制造半导体器件，该半导体膜具有形成在其上的器件，包括使半导体 所述方法还包括：通过重新使用所述半导体晶片以满足预定标准来调整具有要制造的多层膜的半导体晶片的整体厚度的厚度调整步骤。

公开(公告)号：US08575722B2

公开(公告)日：2013-11-05

申请号：US13142544

申请日：2009-12-08

申请人： Kiyoshi Mitani ,  Tsuyoshi Ohtsuki ,  Toru Takahashi ,  Wei Feig Qu

发明人： Kiyoshi Mitani ,  Tsuyoshi Ohtsuki ,  Toru Takahashi ,  Wei Feig Qu

IPC分类号： H01L29/06 ,  H01L21/46 ,  H01L21/00

CPC分类号： H01L21/76259 ,  H01L21/0203 ,  H01L21/02032 ,  H01L27/1214 ,  H01L27/1266

摘要： A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.

摘要翻译： 一种制造具有多层膜的半导体晶片的制造方法，其特征在于，在半导体装置的制造中，通过将表面部分变为多孔层，在半导体晶片的表面形成多孔层，在表面形成半导体膜 的多孔层，以制造具有多层膜的半导体晶片，在半导体膜上制造器件，并且通过沿着多孔层分层半导体膜来制造半导体器件，该半导体膜具有形成在其上的器件，包括使半导体 所述方法还包括：通过重新使用所述半导体晶片以满足预定标准来调整具有要制造的多层膜的半导体晶片的整体厚度的厚度调整步骤。

公开(公告)号：US20110045246A1

公开(公告)日：2011-02-24

申请号：US12990038

申请日：2009-05-07

申请人： Fumio Tahara ,  Tsuyoshi Ohtsuki ,  Takatoshi Nagoya ,  Kiyoshi Mitani

发明人： Fumio Tahara ,  Tsuyoshi Ohtsuki ,  Takatoshi Nagoya ,  Kiyoshi Mitani

IPC分类号： B32B5/00 ,  H01L21/66 ,  G01Q60/24

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/02008 ,  H01L22/12 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.

摘要翻译： 一种制造硅单晶晶片的方法，至少具有：制备硅单晶锭的步骤; 切割硅单晶锭以制造多个切片基板的步骤; 通过进行研磨，蚀刻和研磨中的至少一种来将多个切片基板加工成多个基板的处理步骤; 从所述多个基板中取样至少一个的步骤; 通过AFM测量在采样步骤中采样的基板的表面粗糙度并获得对应于20nm至50nm的波长的频带的振幅（强度）以判定接受的步骤; 以及如果判断结果为拒绝则判断结果为接受或执行再处理的步骤，将基板发送到下一步骤。

公开(公告)号：US08551246B2

公开(公告)日：2013-10-08

申请号：US12990038

申请日：2009-05-07

申请人： Fumio Tahara ,  Tsuyoshi Ohtsuki ,  Takatoshi Nagoya ,  Kiyoshi Mitani

发明人： Fumio Tahara ,  Tsuyoshi Ohtsuki ,  Takatoshi Nagoya ,  Kiyoshi Mitani

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/02008 ,  H01L22/12 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.

摘要翻译： 一种制造硅单晶晶片的方法，至少具有：制备硅单晶锭的步骤; 切割硅单晶锭以制造多个切片基板的步骤; 通过进行研磨，蚀刻和研磨中的至少一种来将多个切片基板加工成多个基板的处理步骤; 从所述多个基板中取样至少一个的步骤; 通过AFM测量在采样步骤中采样的基板的表面粗糙度并获得对应于20nm至50nm的波长的频带的振幅（强度）以判定接受的步骤; 以及如果判断结果为拒绝则判断结果为接受或执行再处理的步骤，将基板发送到下一步骤。

公开(公告)号：US08900971B2

公开(公告)日：2014-12-02

申请号：US13978840

申请日：2012-01-06

申请人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kyoko Mitani

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L23/00 ,  H01L21/762 ,  H01L21/84

CPC分类号： H01L24/83 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/84 ,  H01L24/26 ,  H01L2224/83 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

摘要翻译： 本发明提供了一种通过绝缘膜将基底与基片接合而制造键合衬底的方法，包括：多孔层形成步骤，部分地形成多孔层或形成厚度在接合表面上部分变化的多孔层 的基底; 绝缘膜形成步骤，将多孔层改变为绝缘膜，从而形成厚度在基底基板的接合表面上部分变化的绝缘膜; 键合步骤，通过所述绝缘膜将所述基底衬底接合到所述接合衬底; 以及降低键合键合衬底的膜厚以形成薄膜层的膜厚减小步骤。 结果，提供了一种能够通过简单的方法获得其厚度部分变化的绝缘膜的接合基板的制造方法。

公开(公告)号：US07633305B2

公开(公告)日：2009-12-15

申请号：US11661276

申请日：2005-09-12

申请人： Tsuyoshi Ohtsuki ,  Hideki Sato

发明人： Tsuyoshi Ohtsuki ,  Hideki Sato

IPC分类号： G01R31/02 ,  G01R31/26

CPC分类号： G01R31/2889 ,  H01L22/14

摘要： The present invention is a method for evaluating a semiconductor wafer by measuring an electric characteristic of the semiconductor wafer by using a mercury electrode, wherein when the semiconductor wafer is held on a wafer chuck that the mercury electrode is formed in a holding surface of so that a side of a surface to be measured of the semiconductor wafer is set to a side of the wafer chuck, the semiconductor wafer is held on the wafer chuck whose diameter forming an outermost periphery of the holding surface is smaller than a diameter forming an outermost periphery of the surface to be measured of the semiconductor wafer, and then, the electric characteristic is measured by contacting the mercury electrode with the surface to be measured of the wafer, and an evaluation apparatus. Thereby, there can be provided an evaluation method and an evaluation apparatus for a semiconductor wafer by which when the semiconductor wafer is evaluated by measuring an electric characteristic thereof by using a mercury electrode, the semiconductor wafer can be high-precisely and effectively evaluated by setting a size of a holding surface of a wafer chuck to be smaller than that of a surface to be measured of the semiconductor wafer that is an object to be measured.

摘要翻译： 本发明是一种通过使用水银电极测量半导体晶片的电特性来评估半导体晶片的方法，其中当将半导体晶片保持在晶片卡盘上时，将汞电极形成在保持表面上，使得 将半导体晶片的待测表面的一侧设置在晶片卡盘的一侧，将半导体晶片保持在形成保持表面的最外周的直径小于形成最外周的直径的晶片卡盘上 的半导体晶片的待测表面，然后通过使水银电极与晶片的待测表面接触来测量电特性，以及评估装置。 因此，可以提供一种用于半导体晶片的评估方法和评估装置，当通过使用汞电极测量半导体晶片的电特性来评估半导体晶片时，可以通过设置高精度有效地评估半导体晶片 晶片卡盘的保持表面的尺寸要小于作为被测量对象的半导体晶片的待测量表面的尺寸。

公开(公告)号：US08877609B2

公开(公告)日：2014-11-04

申请号：US14007584

申请日：2012-04-10

申请人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kyoko Mitani

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L21/762 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/76251 ,  H01L21/76256 ,  H01L21/84 ,  H01L27/1207

摘要： A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

摘要翻译： 一种在键合衬底的一部分中具有绝缘体层的接合衬底的制造方法包括：在基底衬底的接合表面上部分地形成多孔层或形成其厚度部分变化的多孔层; 对其上形成有多孔层的基底基板进行热处理以将多孔层改变成绝缘体层，从而在基底基板的接合表面上形成厚度部分变化的绝缘体层; 通过蚀刻去除其厚度变化相应于小厚度部分的厚度的量的绝缘体层; 将未蚀刻剩余绝缘体层的基底基板的接合表面接合到接合基板; 并且减小键合的键合衬底的厚度，从而形成薄膜层。

公开(公告)号：US20140120695A1

公开(公告)日：2014-05-01

申请号：US14007584

申请日：2012-04-10

申请人： Yuuki Ooi ,  Wei Feng Qu ,  Tsuyoshi Ohtsuki ,  Kyoko Mitani ,  Fumio Tahara

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/76256 ,  H01L21/84 ,  H01L27/1207

摘要： A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

摘要翻译： 一种在键合衬底的一部分中具有绝缘体层的接合衬底的制造方法包括：在基底衬底的接合表面上部分地形成多孔层或形成其厚度部分变化的多孔层; 对其上形成有多孔层的基底基板进行热处理以将多孔层改变成绝缘体层，从而在基底基板的接合表面上形成厚度部分变化的绝缘体层; 通过蚀刻去除其厚度变化相应于小厚度部分的厚度的量的绝缘体层; 将未蚀刻剩余绝缘体层的基底基板的接合表面接合到接合基板; 并且减小键合的键合衬底的厚度，从而形成薄膜层。

公开(公告)号：US08043871B2

公开(公告)日：2011-10-25

申请号：US12921492

申请日：2009-03-24

申请人： Tsuyoshi Ohtsuki ,  Satoshi Tobe ,  Yasushi Mizusawa

发明人： Tsuyoshi Ohtsuki ,  Satoshi Tobe ,  Yasushi Mizusawa

IPC分类号： H01L21/66

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.

摘要翻译： 本发明提供一种在硅晶片上形成氧化膜的方法，包括：预先测量硅晶片的表面层部分中的硅晶片的表面粗糙度和/或结晶度; 基于测量值调整硅晶片的氧化条件; 以及在调整好的氧化条件下在硅晶片上形成氧化膜。 结果，可以提供形成氧化膜的方法，其可以在形成氧化膜之前甚至基于硅晶片的表面和/或表面层的状态以及甚至超薄氧化物来调节氧化条件 因此可以精确地形成膜。

公开(公告)号：US20130341763A1

公开(公告)日：2013-12-26

申请号：US13978840

申请日：2012-01-06

申请人： Yuuki Ooi ,  Wei Feng Qu ,  Tsuyoshi Ohtsuki ,  Kyoko Mitani ,  Fumio Tahara

发明人： Tsuyoshi Ohtsuki ,  Wei Feng Qu ,  Fumio Tahara ,  Yuuki Ooi ,  Kiyoshi Mitani

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/84 ,  H01L24/26 ,  H01L2224/83 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

摘要翻译： 本发明提供了一种通过绝缘膜将基底与基片接合而制造键合衬底的方法，包括：多孔层形成步骤，部分地形成多孔层或形成厚度在接合表面上部分变化的多孔层 的基底; 绝缘膜形成步骤，将多孔层改变为绝缘膜，从而形成厚度在基底基板的接合表面上部分变化的绝缘膜; 键合步骤，通过所述绝缘膜将所述基底衬底接合到所述接合衬底; 以及降低键合键合衬底的膜厚以形成薄膜层的膜厚减小步骤。 结果，提供了一种能够通过简单的方法获得其厚度部分变化的绝缘膜的接合基板的制造方法。