Arrangement of aperture diaphragms and/or filters, with changeable characteristics for optical devices
    1.
    发明申请
    Arrangement of aperture diaphragms and/or filters, with changeable characteristics for optical devices 审中-公开
    孔径光阑和/或滤光片的布置,具有光学元件的特性

    公开(公告)号:US20060291031A1

    公开(公告)日:2006-12-28

    申请号:US11429428

    申请日:2006-05-08

    IPC分类号: G02F1/01

    摘要: An arrangement making use of two-dimensional arrays consisting of individually controllable elements, for forming aperture diaphragms in the beam paths of optical devices. In an arrangement of diaphragm apertures and/or filters, in which the form, position and/or optical characteristics can be changed, for use in optical devices, at least one two-dimensional array, consisting of individually controllable elements, is arranged for forming the diaphragm apertures and/or filters in the optical imaging and/or illumination beam paths and is connected with a control unit for controlling the individual elements In this way, the geometry, the optical characteristics and/or the position of the aperture diaphragms and/or the filters can be controlled very quickly. These changes can also be made “online” during the process of measurement or adjustment in the sense of optical fine tuning. Furthermore, using these systems, the elaborate and time consuming preparation of the diaphragm apertures with geometric forms can be omitted.

    摘要翻译: 使用由独立可控元件组成的二维阵列的装置,用于在光学装置的光束路径中形成孔径光阑。 在其中可以改变形式,位置和/或光学特性的隔膜孔和/或滤光器的布置中,用于光学装置中,布置有由独立可控元件组成的至少一个二维阵列,用于形成 光学成像和/或照明光束路径中的隔膜孔和/或滤光器,并与用于控制各个元件的控制单元连接。以这种方式,孔径光阑的几何形状,光学特性和/或位置和/ 或者可以非常快速地控制过滤器。 这些变化也可以在光学微调的测量或调整过程中“联机”。 此外,使用这些系统,可以省略精细和耗时的几何形式的隔膜孔的准备。

    Method for Mask Inspection for Mask Design and Mask Production
    2.
    发明申请
    Method for Mask Inspection for Mask Design and Mask Production 有权
    面膜设计和面膜生产面膜检查方法

    公开(公告)号:US20080247632A1

    公开(公告)日:2008-10-09

    申请号:US11885095

    申请日:2006-02-04

    IPC分类号: G03F7/20

    摘要: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

    摘要翻译: 本发明涉及一种掩模检查方法,可用于设计和生产掩模,以便早期检测相关的弱点并进行纠正。 根据所述掩模检查方法,基于转换为掩模布局的掩模设计,进行空中图像模拟,优选全面的空间图像模拟,以便确定热点列表。 通过AIMS工具分析掩模/测试掩模,从而产生真实的航空图像并与模拟的航空图像进行比较。 使用确定的空间图像之间的差异来改进掩模设计。 本发明的布置使得能够进行用于掩模设计和掩模生产的掩模检查的方法。 直接在掩模生产过程中使用AIMS工具基本上加快了掩模生产,同时降低了错误率和成本。

    Method for mask inspection for mask design and mask production
    3.
    发明授权
    Method for mask inspection for mask design and mask production 有权
    面罩设计和面膜生产的面膜检查方法

    公开(公告)号:US08705838B2

    公开(公告)日:2014-04-22

    申请号:US11885095

    申请日:2006-02-04

    IPC分类号: G06K9/00

    摘要: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

    摘要翻译: 本发明涉及一种掩模检查方法,可用于设计和生产掩模,以便早期检测相关的弱点并进行纠正。 根据所述掩模检查方法,基于转换为掩模布局的掩模设计,进行空中图像模拟,优选全面的空间图像模拟,以便确定热点列表。 通过AIMS工具分析掩模/测试掩模,从而产生真实的航空图像并与模拟的航空图像进行比较。 使用确定的空间图像之间的差异来改进掩模设计。 本发明的布置使得能够进行用于掩模设计和掩模生产的掩模检查的方法。 直接在掩模生产过程中使用AIMS工具基本上加快了掩模生产,同时降低了错误率和成本。

    Arrangement for the production of photomasks
    4.
    发明申请
    Arrangement for the production of photomasks 审中-公开
    制作光掩模的安排

    公开(公告)号:US20060154150A1

    公开(公告)日:2006-07-13

    申请号:US10520648

    申请日:2003-07-09

    IPC分类号: G03F1/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: An arrangement and a method for the production of photomasks in which at least one defect control system is connected to at least one repair system by a stationary data connection or online connection, and the defect control system and repair system are connected to one another by data in such a way that the results obtained on one of the systems are immediately available to the other system for further processing. The defect control system conveys detected defects to the repair system via a data connection for data exchange. An AIMS system is advantageously provided as defect control system and an electron beam system is advantageously provided for defect control.

    摘要翻译: 一种用于生产光掩模的布置和方法,其中至少一个缺陷控制系统通过固定数据连接或在线连接连接到至少一个修复系统,并且所述缺陷控制系统和修复系统通过数据彼此连接 以使得在其中一个系统上获得的结果立即可用于另一个系统用于进一步处理。 缺陷控制系统通过用于数据交换的数据连接将检测到的缺陷传送到维修系统。 有利地提供AIMS系统作为缺陷控制系统,并且有利地提供用于缺陷控制的电子束系统。

    Method and arrangement for repairing photolithography masks
    7.
    发明授权
    Method and arrangement for repairing photolithography masks 有权
    修复光刻掩模的方法和布置

    公开(公告)号:US07916930B2

    公开(公告)日:2011-03-29

    申请号:US11900946

    申请日:2007-09-14

    IPC分类号: G06K9/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

    摘要翻译: 用于修复光刻掩模的方法和装置,其中检查光刻掩模是否存在缺陷,并且产生缺陷的列表,其中至少一种类型的缺陷,其范围及其在光刻掩模上的位置 被分配给每个缺陷,并且这些缺陷被修复。

    Method and apparatus for the repair of photolithography masks
    8.
    发明申请
    Method and apparatus for the repair of photolithography masks 有权
    用于修复光刻掩模的方法和装置

    公开(公告)号:US20080069431A1

    公开(公告)日:2008-03-20

    申请号:US11900946

    申请日:2007-09-14

    IPC分类号: G06K9/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

    摘要翻译: 用于修复光刻掩模的方法和装置,其中检查光刻掩模是否存在缺陷,并且产生缺陷的列表,其中至少一种类型的缺陷,其范围及其在光刻掩模上的位置 被分配给每个缺陷,并且这些缺陷被修复。

    METHOD AND APPARATUS FOR MEASURING OF MASKS FOR THE PHOTO-LITHOGRAPHY
    9.
    发明申请
    METHOD AND APPARATUS FOR MEASURING OF MASKS FOR THE PHOTO-LITHOGRAPHY 有权
    用于测量光刻胶片的方法和装置

    公开(公告)号:US20110016437A1

    公开(公告)日:2011-01-20

    申请号:US12933226

    申请日:2009-03-19

    IPC分类号: G06F17/50

    摘要: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

    摘要翻译: 本发明涉及一种用于测量光刻掩模的方法和装置。 在这种情况下,在可移动掩模载体上的掩模上测量的结构被照射并作为空间图像成像到检测器上,在晶片曝光期间以与光刻扫描器中的照明相对应的方式设置照明。 要测量的结构位于掩模上的位置的选择是预定的,并且选择中的掩模上的位置被连续地带到成像光学系统的焦点,在那里它们被照亮,并且在每种情况下被成像为 将放大的航空图像放置在检测器上,随后存储航空图像。 然后通过预定的评估算法分析结构的结构特性。 在这种情况下,位置的设定和结构特性的确定的准确性增加。

    METHOD FOR REPAIRING PHASE SHIFT MASKS
    10.
    发明申请
    METHOD FOR REPAIRING PHASE SHIFT MASKS 有权
    修复相移屏障的方法

    公开(公告)号:US20100266937A1

    公开(公告)日:2010-10-21

    申请号:US12742741

    申请日:2008-11-14

    IPC分类号: G03F1/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion. In such a method, the imaging properties are analyzed in that, for each defect to be improved, a test variable is determined for the defect as a function of focus and illumination, and at least one additional non-defective point on the phase shift mask in the immediate vicinity of the defect is determined, and a minimum allowable deviation between the test variable for the defect and the non-defective point is predetermined as the tolerance criterion.

    摘要翻译: 本发明涉及一种修复用于光刻的相移掩模的方法,其中检查相位掩模是否存在缺陷,并且如果存在缺陷,则(i)进行关于哪个缺陷对成像特性的不利影响的分析 (ii)改善所述缺陷,(iii)分析改进的相移掩模的成像特性并检查预定的公差标准的维持,以及(iv)前述两个步骤(ii) 和(iii)如果成像性能不满足预定的公差标准,则可选地重复多次。 在这种方法中,分析成像特性,因为对于要改善的每个缺陷,确定作为焦点和照明的函数的缺陷的测试变量,以及相移掩模上的至少一个附加的非缺陷点 确定缺陷附近,将缺陷的试验变量与非缺陷点之间的最小容许偏差预先设定为公差标准。