Method for mask inspection for mask design and mask production
    1.
    发明授权
    Method for mask inspection for mask design and mask production 有权
    面罩设计和面膜生产的面膜检查方法

    公开(公告)号:US08705838B2

    公开(公告)日:2014-04-22

    申请号:US11885095

    申请日:2006-02-04

    IPC分类号: G06K9/00

    摘要: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

    摘要翻译: 本发明涉及一种掩模检查方法,可用于设计和生产掩模,以便早期检测相关的弱点并进行纠正。 根据所述掩模检查方法,基于转换为掩模布局的掩模设计,进行空中图像模拟,优选全面的空间图像模拟,以便确定热点列表。 通过AIMS工具分析掩模/测试掩模,从而产生真实的航空图像并与模拟的航空图像进行比较。 使用确定的空间图像之间的差异来改进掩模设计。 本发明的布置使得能够进行用于掩模设计和掩模生产的掩模检查的方法。 直接在掩模生产过程中使用AIMS工具基本上加快了掩模生产,同时降低了错误率和成本。

    Method for Mask Inspection for Mask Design and Mask Production
    2.
    发明申请
    Method for Mask Inspection for Mask Design and Mask Production 有权
    面膜设计和面膜生产面膜检查方法

    公开(公告)号:US20080247632A1

    公开(公告)日:2008-10-09

    申请号:US11885095

    申请日:2006-02-04

    IPC分类号: G03F7/20

    摘要: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

    摘要翻译: 本发明涉及一种掩模检查方法,可用于设计和生产掩模,以便早期检测相关的弱点并进行纠正。 根据所述掩模检查方法,基于转换为掩模布局的掩模设计,进行空中图像模拟,优选全面的空间图像模拟,以便确定热点列表。 通过AIMS工具分析掩模/测试掩模,从而产生真实的航空图像并与模拟的航空图像进行比较。 使用确定的空间图像之间的差异来改进掩模设计。 本发明的布置使得能够进行用于掩模设计和掩模生产的掩模检查的方法。 直接在掩模生产过程中使用AIMS工具基本上加快了掩模生产,同时降低了错误率和成本。

    Arrangement of aperture diaphragms and/or filters, with changeable characteristics for optical devices
    3.
    发明申请
    Arrangement of aperture diaphragms and/or filters, with changeable characteristics for optical devices 审中-公开
    孔径光阑和/或滤光片的布置,具有光学元件的特性

    公开(公告)号:US20060291031A1

    公开(公告)日:2006-12-28

    申请号:US11429428

    申请日:2006-05-08

    IPC分类号: G02F1/01

    摘要: An arrangement making use of two-dimensional arrays consisting of individually controllable elements, for forming aperture diaphragms in the beam paths of optical devices. In an arrangement of diaphragm apertures and/or filters, in which the form, position and/or optical characteristics can be changed, for use in optical devices, at least one two-dimensional array, consisting of individually controllable elements, is arranged for forming the diaphragm apertures and/or filters in the optical imaging and/or illumination beam paths and is connected with a control unit for controlling the individual elements In this way, the geometry, the optical characteristics and/or the position of the aperture diaphragms and/or the filters can be controlled very quickly. These changes can also be made “online” during the process of measurement or adjustment in the sense of optical fine tuning. Furthermore, using these systems, the elaborate and time consuming preparation of the diaphragm apertures with geometric forms can be omitted.

    摘要翻译: 使用由独立可控元件组成的二维阵列的装置,用于在光学装置的光束路径中形成孔径光阑。 在其中可以改变形式,位置和/或光学特性的隔膜孔和/或滤光器的布置中,用于光学装置中,布置有由独立可控元件组成的至少一个二维阵列,用于形成 光学成像和/或照明光束路径中的隔膜孔和/或滤光器,并与用于控制各个元件的控制单元连接。以这种方式,孔径光阑的几何形状,光学特性和/或位置和/ 或者可以非常快速地控制过滤器。 这些变化也可以在光学微调的测量或调整过程中“联机”。 此外,使用这些系统,可以省略精细和耗时的几何形式的隔膜孔的准备。

    Arrangement for the production of photomasks
    5.
    发明申请
    Arrangement for the production of photomasks 审中-公开
    制作光掩模的安排

    公开(公告)号:US20060154150A1

    公开(公告)日:2006-07-13

    申请号:US10520648

    申请日:2003-07-09

    IPC分类号: G03F1/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: An arrangement and a method for the production of photomasks in which at least one defect control system is connected to at least one repair system by a stationary data connection or online connection, and the defect control system and repair system are connected to one another by data in such a way that the results obtained on one of the systems are immediately available to the other system for further processing. The defect control system conveys detected defects to the repair system via a data connection for data exchange. An AIMS system is advantageously provided as defect control system and an electron beam system is advantageously provided for defect control.

    摘要翻译: 一种用于生产光掩模的布置和方法,其中至少一个缺陷控制系统通过固定数据连接或在线连接连接到至少一个修复系统,并且所述缺陷控制系统和修复系统通过数据彼此连接 以使得在其中一个系统上获得的结果立即可用于另一个系统用于进一步处理。 缺陷控制系统通过用于数据交换的数据连接将检测到的缺陷传送到维修系统。 有利地提供AIMS系统作为缺陷控制系统,并且有利地提供用于缺陷控制的电子束系统。

    Method and arrangement for repairing photolithography masks
    7.
    发明授权
    Method and arrangement for repairing photolithography masks 有权
    修复光刻掩模的方法和布置

    公开(公告)号:US07916930B2

    公开(公告)日:2011-03-29

    申请号:US11900946

    申请日:2007-09-14

    IPC分类号: G06K9/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

    摘要翻译: 用于修复光刻掩模的方法和装置,其中检查光刻掩模是否存在缺陷,并且产生缺陷的列表,其中至少一种类型的缺陷,其范围及其在光刻掩模上的位置 被分配给每个缺陷,并且这些缺陷被修复。

    Method and apparatus for the repair of photolithography masks
    8.
    发明申请
    Method and apparatus for the repair of photolithography masks 有权
    用于修复光刻掩模的方法和装置

    公开(公告)号:US20080069431A1

    公开(公告)日:2008-03-20

    申请号:US11900946

    申请日:2007-09-14

    IPC分类号: G06K9/00

    CPC分类号: G03F1/72 G03F1/84

    摘要: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

    摘要翻译: 用于修复光刻掩模的方法和装置,其中检查光刻掩模是否存在缺陷,并且产生缺陷的列表,其中至少一种类型的缺陷,其范围及其在光刻掩模上的位置 被分配给每个缺陷,并且这些缺陷被修复。

    METHOD AND DEVICE FOR MEASURING THE RELATIVE LOCAL POSITION ERROR OF ONE OF THE SECTIONS OF AN OBJECT THAT IS EXPOSED SECTION BY SECTION
    10.
    发明申请
    METHOD AND DEVICE FOR MEASURING THE RELATIVE LOCAL POSITION ERROR OF ONE OF THE SECTIONS OF AN OBJECT THAT IS EXPOSED SECTION BY SECTION 有权
    用于测量部分暴露部分的部分之一的相对本地位置错误的方法和装置

    公开(公告)号:US20110229010A1

    公开(公告)日:2011-09-22

    申请号:US13130600

    申请日:2009-11-28

    IPC分类号: G06K9/00

    摘要: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

    摘要翻译: 提供了一种用于测量逐段暴露的物体的一个部分(特别是光刻掩模或晶片)的相对局部位置误差的方法,每个暴露部分具有多个测量标记,其中 )以放大的方式成像大于该部分的对象的区域,并且被检测为图像,b)基于检测到的图像确定检测图像中包含的测量标记的位置误差,c) 校正位置误差是通过由放大的成像和检测引起的位置误差分量从确定的测量标记的位置误差中提取导出的,d)基于校正位置导出一个部分的相对局部位置误差 测量标记的误差。