公开(公告)号：US08900654B2

公开(公告)日：2014-12-02

申请号：US13194472

申请日：2011-07-29

申请人： Klaus Kunze ,  Gregory Nyce ,  Wenzhuo Guo

发明人： Klaus Kunze ,  Gregory Nyce ,  Wenzhuo Guo

IPC分类号： B05D5/12 ,  H01L51/00 ,  H01B3/18 ,  C01B33/04 ,  C01B6/06

CPC分类号： C01B6/06 ,  C01B33/04 ,  H01B3/18 ,  H01L51/0094 ,  Y02E10/549 ,  Y02P70/521

摘要： Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.

摘要翻译： 包括通式SinH2n和SinH2n + 2的硅烷（和任选的环硅烷）化合物的受控聚合和/或低聚的组合物和方法，以及卤代硅烷和芳基硅烷，以产生具有低的可溶性聚硅烷，多晶硅和/或聚硅烷 碳和金属污染物的水平，高分子量，低​​挥发性，高纯度，高溶解度和/或高粘度。 聚硅烷，多晶硅和/或聚硅烷可用作含硅和/或锗的导体，半导体和介电膜的前体。

公开(公告)号：US20130026453A1

公开(公告)日：2013-01-31

申请号：US13194472

申请日：2011-07-29

申请人： Klaus KUNZE ,  Gregory Nyce ,  Wenzhuo Guo

发明人： Klaus KUNZE ,  Gregory Nyce ,  Wenzhuo Guo

IPC分类号： H01L51/40 ,  H01L51/30 ,  H01B1/06 ,  C01B33/04 ,  C01B6/06

CPC分类号： C01B6/06 ,  C01B33/04 ,  H01B3/18 ,  H01L51/0094 ,  Y02E10/549 ,  Y02P70/521

摘要： Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.

摘要翻译： 包括通式SinH2n和SinH2n + 2的硅烷（和任选的环硅烷）化合物的受控聚合和/或低聚的组合物和方法，以及卤代硅烷和芳基硅烷，以产生具有低的可溶性聚硅烷，多晶硅和/或聚硅烷 碳和金属污染物的水平，高分子量，低​​挥发性，高纯度，高溶解度和/或高粘度。 聚硅烷，多晶硅和/或聚硅烷可用作含硅和/或锗的导体，半导体和介电膜的前体。

公开(公告)号：US08372194B1

公开(公告)日：2013-02-12

申请号：US12020481

申请日：2008-01-25

申请人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

发明人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

IPC分类号： C09D183/16

CPC分类号： H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的液态硅具有商业质量和数量的掺杂半导体膜。

公开(公告)号：US08367031B1

公开(公告)日：2013-02-05

申请号：US13349838

申请日：2012-01-13

申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C01B31/36

CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US08124040B1

公开(公告)日：2012-02-28

申请号：US12858327

申请日：2010-08-17

申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C01B31/36

CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US07799302B1

公开(公告)日：2010-09-21

申请号：US11934734

申请日：2007-11-02

申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Takashima ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C01B33/26

CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US07498015B1

公开(公告)日：2009-03-03

申请号：US10789317

申请日：2004-02-27

申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Ito ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Ito ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C01B6/00

CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。

公开(公告)号：US20080022897A1

公开(公告)日：2008-01-31

申请号：US11868927

申请日：2007-10-08

申请人： Fabio Zurcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Cleeves

发明人： Fabio Zurcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Cleeves

IPC分类号： C09D1/00

CPC分类号： H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

公开(公告)号：US08840857B1

公开(公告)日：2014-09-23

申请号：US13494895

申请日：2012-06-12

申请人： Wenzhuo Guo ,  Fabio Zürcher ,  Joerg Rockenberger ,  Klaus Kunze ,  Vladimir K. Dioumaev ,  Brent Ridley ,  James Montague Cleeves

发明人： Wenzhuo Guo ,  Fabio Zürcher ,  Joerg Rockenberger ,  Klaus Kunze ,  Vladimir K. Dioumaev ,  Brent Ridley ,  James Montague Cleeves

IPC分类号： C01B33/00

CPC分类号： C01B33/00 ,  C01B33/04

摘要： Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.

摘要翻译： 杂环硅烷化合物及其制备方法。 这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂的硅烷膜印刷或旋涂到可以容易地转化成掺杂的非晶硅膜（也可以在一定程度上被氢化）的基底上，或掺杂多晶 半导体薄膜适用于电子设备。 因此，本发明有利地提供了来自“掺杂液体硅”组合物的商业品质和掺杂半导体膜的量。

公开(公告)号：US07314513B1

公开(公告)日：2008-01-01

申请号：US10949013

申请日：2004-09-24

申请人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

发明人： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

IPC分类号： C09D183/16

CPC分类号： H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。