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    Method for chemically treating a substrate
    1.
    发明授权
    Method for chemically treating a substrate 失效
    化学处理基材的方法

    公开(公告)号：US08563440B2

    公开(公告)日：2013-10-22

    申请号：US13059560

    申请日：2009-09-29

    申请人： Andreas Teppe ,  Berthold Schum ,  Dieter Franke ,  Ingo Schwirtlich ,  Knut Vaas ,  Wilfried Schmidt

    发明人： Andreas Teppe ,  Berthold Schum ,  Dieter Franke ,  Ingo Schwirtlich ,  Knut Vaas ,  Wilfried Schmidt

    IPC分类号： H01L21/302

    CPC分类号： H01L21/30604 ,  H01L21/67057 ,  H01L21/67086 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

    摘要翻译： 一种用于通过使具有流体化学活性的处理介质与至少底物的底表面接触来化学处理具有底表面，顶表面和侧表面的盘形基底的方法。 衬底相对于处理介质移动，同时在衬底，衬底介质和围绕衬底和介质的气氛之间形成三线。 为了化学去除错误，特别是在侧表面中，应当进行相对运动，同时避免处理介质与基板的顶表面的接触，其中三线形成在面向侧面的所需高度 相对于衬底和处理介质之间的相对运动而离开工艺介质流动侧。

    METHOD FOR CHEMICALLY TREATING A SUBSTRATE
    2.
    发明申请
    METHOD FOR CHEMICALLY TREATING A SUBSTRATE 失效
    化学处理基材的方法

    公开(公告)号：US20110183524A1

    公开(公告)日：2011-07-28

    申请号：US13059560

    申请日：2009-09-29

    申请人： Andreas Teppe ,  Berthold Schum ,  Dieter Franke ,  Ingo Schwirtlich ,  Knut Vaas ,  Wilfried Schmidt

    发明人： Andreas Teppe ,  Berthold Schum ,  Dieter Franke ,  Ingo Schwirtlich ,  Knut Vaas ,  Wilfried Schmidt

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L21/67057 ,  H01L21/67086 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.

    摘要翻译： 一种用于通过使具有流体化学活性的处理介质与至少底物的底表面接触来化学处理具有底表面，顶表面和侧表面的盘形基底的方法。 衬底相对于处理介质移动，同时在衬底，衬底介质和围绕衬底和介质的气氛之间形成三线。 为了化学去除错误，特别是在侧表面中，应当进行相对运动，同时避免处理介质与基板的顶表面的接触，其中三线形成在面向侧面的所需高度 相对于衬底和处理介质之间的相对运动而离开工艺介质流动侧。 以这种方式，可以相对于处理介质中的组分的分压来调整气氛，使得顶表面保持疏水特性。

    METHOD AND ARRANGEMENT FOR PRODUCING A FUNCTIONAL LAYER ON A SEMICONDUCTOR COMPONENT
    3.
    发明申请
    METHOD AND ARRANGEMENT FOR PRODUCING A FUNCTIONAL LAYER ON A SEMICONDUCTOR COMPONENT 审中-公开
    用于在半导体元件上生产功能层的方法和装置

    公开(公告)号：US20110165726A1

    公开(公告)日：2011-07-07

    申请号：US13059383

    申请日：2009-08-26

    申请人： Knut Vaas ,  Berthold Schum ,  Wilfried Schmidt ,  Dieter Franke ,  Ingo Schwirtlich

    发明人： Knut Vaas ,  Berthold Schum ,  Wilfried Schmidt ,  Dieter Franke ,  Ingo Schwirtlich

    IPC分类号： H01L31/18 ,  B05C11/00 ,  B05C3/02 ,  B05B1/00

    CPC分类号： H01L21/316 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/228 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/6715 ,  H01L31/18

    摘要： A method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, where the functional layer has a layer thickness d1 and the liquid required for forming the functional layer having the thickness d1 has a layer thickness d2. In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d3 where d3>d2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d2 or approximately the thickness d2.

    摘要翻译： 一种在半导体部件的表面的至少一个区域上形成至少一个功能层的方法，该方法是在至少一个区域上施加液体，其中功能层具有层厚度d1和形成功能层所需的液体 厚度d1具有层厚度d2。 为了以可再现的方式制造具有期望的薄且均匀厚度的功能层，提出将液体以层厚度d3（d3> d2）施加到表面的至少一个区域，并且随后 无论是半导体部件以平移方式移动还是以固定方式布置的半导体部件，以非接触方式将多余的液体从表面移除到使得液体层具有厚度d2或近似厚度d2的程度。

    METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER
    4.
    发明申请
    METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER 审中-公开
    用于高分辨率半导体层的湿化学蚀刻的方法

    公开(公告)号：US20130228220A1

    公开(公告)日：2013-09-05

    申请号：US13820537

    申请日：2011-09-02

    申请人： Berthold Schum ,  Knut Vaas ,  Agata Lachowicz ,  Norman Hermert

    发明人： Berthold Schum ,  Knut Vaas ,  Agata Lachowicz ,  Norman Hermert

    IPC分类号： H01L31/18

    CPC分类号： H01L31/02363 ,  C09K13/08 ,  H01L21/30604 ,  H01L31/022425 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.

    摘要翻译： 提供了一种用于在碱性蚀刻溶液中对硅层进行湿化学蚀刻的方法，其中硅层是太阳能电池发射体的表面区域。 该方法确保使用不含氧化剂的碱性蚀刻溶液将发射体的表面区域均匀地回蚀，所述无氧化物的碱性蚀刻溶液包含至少一种有机缓和剂用于发射体表面区域的各向同性蚀刻，其中调节剂具有掺杂剂 浓度至少为1018原子/ cm3。