公开(公告)号：US4837137A

公开(公告)日：1989-06-06

申请号：US127921

申请日：1987-12-02

申请人： Koichi Aizawa ,  Toyoki Kazama ,  Yukio Takano ,  Yukihisa Tamura

发明人： Koichi Aizawa ,  Toyoki Kazama ,  Yukio Takano ,  Yukihisa Tamura

IPC分类号： G03G5/043 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/0433 ,  G03G5/08285 ,  G03G5/144

摘要： In the photoreceptor described in the specification, an electroconductive base has an amorphous silicon type photoconductive layer coated over a blocking layer on the base and an amorphous carbon-containing surface layer, coated over a buffer layer on the photoconductive layer, has a hardness on the free surface side which is higher than the hardness on the buffer surface side. Apparatus for preparing the photoreceptor includes a CVD vacuum chamber and an arrangement for supplying selected layer-forming gases to the chamber in a controlled manner.

摘要翻译： 在说明书中描述的感光体中，导电基底具有涂覆在基底上的阻挡层上的非晶硅型光电导层，并且涂覆在光电导层上的缓冲层上的无定形含碳表面层具有在 自由表面侧高于缓冲表面侧的硬度。 用于制备感光体的设备包括CVD真空室和用于以受控的方式将选定的成层气体供应到室中的装置。

公开(公告)号：US4770966A

公开(公告)日：1988-09-13

申请号：US24822

申请日：1987-03-12

申请人： Toyoki Kazama ,  Koichi Aizawa ,  Kenichi Hara ,  Toshiyuki Iijima ,  Yukio Takano

发明人： Toyoki Kazama ,  Koichi Aizawa ,  Kenichi Hara ,  Toshiyuki Iijima ,  Yukio Takano

IPC分类号： H01L31/08 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08235 ,  G03G5/0433 ,  G03G5/08285

摘要： A photosensitive material comprising a photosensitive layer composed of an amorphous silicon-based material formed on an electrically conductive support, and a surface layer formed on said photosensitive layer, the surface layer being composed of amorphous carbon containing hydrogen and fluorine has improved printing durability and humidity resistance.

摘要翻译： 包含形成在导电性支持体上的由非晶硅系材料构成的感光层和形成在感光层上的表面层的感光材料，表面层由含有氢和氟的无定形碳组成，具有改善的印刷耐久性和湿度 抵抗性。

公开(公告)号：US4833055A

公开(公告)日：1989-05-23

申请号：US058245

申请日：1987-06-04

申请人： Toyoki Kazama ,  Koichi Aizawa ,  Kenichi Hara ,  Toshiyuki Iijima ,  Yukio Takano

发明人： Toyoki Kazama ,  Koichi Aizawa ,  Kenichi Hara ,  Toshiyuki Iijima ,  Yukio Takano

IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08285 ,  G03G5/08221

摘要： An electrophotographic photoreceptor comprises a conductive base, a photoconductive layer formed of amophous silicon on the conductive base, a buffer layer on the photoconductive layer, and a surface layer covering the photoconductive layer through the buffer layer, wherein the buffer layer is formed of amorphous carbon.

摘要翻译： 电子照相感光体包括导电性基体，导电性基底上的氨基硅形成的光电导层，光电导层上的缓冲层，以及通过缓冲层覆盖光电导层的表面层，其中缓冲层由无定形碳形成 。

公开(公告)号：US4675265A

公开(公告)日：1987-06-23

申请号：US844003

申请日：1986-03-25

申请人： Toyoki Kazama ,  Koichi Aizawa ,  Kiyoto Yamaguchi ,  Kenichi Hara ,  Toshiyuki Iijima

发明人： Toyoki Kazama ,  Koichi Aizawa ,  Kiyoto Yamaguchi ,  Kenichi Hara ,  Toshiyuki Iijima

IPC分类号： G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08214

摘要： Electrophotographic light-sensitive elements according to the invention comprise(a) a conductive support;(b) a photoconductive layer; and(c) a surface protective layer.The conductive support is formed in a sheet-like or cylindrical shape from any suitable conductive material, and acts as an electrode of the light-sensitive element as well as acting as a physical support. The photoconductive layer comprises amorphous hydrogenated silicon having a high absorption efficiency and photoconductivity. The a--Si:H of a photoconductive layer may contain other elements such as fluorine, carbon, nitrogen and germanium, and may be doped with elements belonging to groups III and V of the periodic table. The surface protective layer is the outermost layer of an electrophotographic light-sensitive element according to the invention, and imparts resistance to environmental conditions. The surface protective layer comprises hydrogenated amorphous carbon, and may additionally contain silicon, nitrogen, oxygen or fluorine. The percentage of hydrogen can vary from 1 to 60 mole percent depending upon the conditions under which the surface layer is formed. Preferably, hydrogen is between 10 and 40 mole percent.

摘要翻译： 根据本发明的电子照相感光元件包括（a）导电支撑体; （b）光电导层; 和（c）表面保护层。 导电支撑件由任何合适的导电材料形成为片状或圆柱形，并且用作光敏元件的电极以及用作物理支撑件。 光电导层包括具有高吸收效率和光电导性的无定形氢化硅。 光电导层的a-Si：H可以含有其它元素如氟，碳，氮和锗，并且可以掺杂属于元素周期表的III和Ⅴ族的元素。 表面保护层是根据本发明的电子照相感光元件的最外层，并赋予对环境条件的抵抗力。 表面保护层包括氢化无定形碳，并且可另外含有硅，氮，氧或氟。 取决于形成表面层的条件，氢的百分比可以在1至60摩尔％之间变化。 优选地，氢在10至40摩尔％之间。

公开(公告)号：US4223550A

公开(公告)日：1980-09-23

申请号：US928031

申请日：1978-07-25

申请人： Teizo Takahama ,  Toyoki Kazama ,  Tatumi Hieda

发明人： Teizo Takahama ,  Toyoki Kazama ,  Tatumi Hieda

IPC分类号： G01N27/12 ,  G01N33/00 ,  H01L49/00 ,  G01N27/04

CPC分类号： G01N27/122 ,  G01N33/0031

摘要： A carbon monoxide detecting apparatus is provided which is substantially unaffected by other coexisting gases in the gas atmosphere being sampled. The present invention includes a first carbon monoxide detecting element, a second carbon monoxide detecting element, and a comparing means. The first carbon monoxide detecting element is responsive to carbon monoxide gas and produces a stepwise change in a first film current over a first preselected range of carbon monoxide gas concentration. The second carbon monoxide detecting element is responsive to carbon monoxide gas and produces a stepwise change in a second film current over a second preselected range of carbon monoxide gas. The comparing means is responsive to the first and second film currents and provides an output difference signal .DELTA.E. The amplitude of the output difference signal .DELTA.E is in accordance with the absolute value difference between the first film current and the second film current. The two preselected ranges of carbon monoxide gas concentration can be achieved by appropriately altering the structure of the respective carbon monoxide detecting element and/or by making the substrate temperatures of the two carbon monoxide detecting elements different.

摘要翻译： 提供一氧化碳检测装置，其基本上不受被采样的气体气氛中的其他共存气体的影响。 本发明包括第一一氧化碳检测元件，第二一氧化碳检测元件和比较装置。 第一一氧化碳检测元件响应一氧化碳气体，并且在一氧化碳气体浓度的第一预选范围内产生第一膜电流的逐步变化。 第二一氧化碳检测元件响应于一氧化碳气体，并且在一氧化碳气体的第二预选范围内产生第二膜电流的逐步变化。 比较装置响应于第一和第二胶片电流并提供输出差分信号DELTA E.输出差分信号DELTA E的振幅与第一胶片电流和第二胶片电流之间的绝对值差值相一致。 一氧化碳气体浓度的两个预选范围可以通过适当地改变相应的一氧化碳检测元件的结构和/或通过使两个一氧化碳检测元件的基板温度不同而实现。

公开(公告)号：US4522904A

公开(公告)日：1985-06-11

申请号：US421852

申请日：1982-09-23

申请人： Hideki Kina ,  Toshiyuji Iijima ,  Eizo Tanabe ,  Toyoki Kazama ,  Masaharu Namba

发明人： Hideki Kina ,  Toshiyuji Iijima ,  Eizo Tanabe ,  Toyoki Kazama ,  Masaharu Namba

IPC分类号： G03G21/00 ,  G03G13/00

CPC分类号： G03G21/0094

摘要： In the specific embodiments described herein, the charge drop resulting from fatigue in an electrophotographic process using an a-Se:H photosensitive member is reduced by a stabilization exposure carried out for one to three cycles prior to use of the member for image formation. Longer wavelength light may be used for the stabilization exposure and shorter wavelength light may be used for the imaging and discharge steps.

摘要翻译： 在本文所述的具体实施方案中，使用a-Se：H感光构件的电子照相方法中的疲劳导致的电荷降低通过在使用图像形成构件之前进行一至三个循环的稳定曝光来减少。 较长的波长光可用于稳定曝光，较短波长的光可用于成像和放电步骤。

公开(公告)号：US4224280A

公开(公告)日：1980-09-23

申请号：US924324

申请日：1978-07-13

申请人： Teizo Takahama ,  Toyoki Kazama

发明人： Teizo Takahama ,  Toyoki Kazama

IPC分类号： G01N27/12 ,  G01N27/04

CPC分类号： G01N27/12

摘要： A carbon monoxide detecting device which exhibits a stepwise change in film current over a preselected range in carbon monoxide concentration is disclosed.According to the present invention, in one embodiment, a first film predominantly of stannic oxide (SnO.sub.2) is formed on an insulating layer, and a second film predominantly of platinum (Pt) is formed on said first film. The second film is of an average film thickness of about 0.3 to 30 platinum atom layers. In another embodiment, gold (Au) is incorporated into said second film, and the second film is of an average film thickness of about 0.3 to 30 platinum atoms and the amount of gold ranges up to 50 atomic percent of the amount of platinum. In a third embodiment, a donor selected from the group consisting of antimony (Sb) and bismuth (Bi) is incorporated into the first film, and an intermediate film predominantly of stannic oxide (SnO.sub.2) having an acceptor selected from the group consisting of platinum (Pt), aluminum (Al), and boron (B) is formed intermediate said first and second films. The first, intermediate, and second films are formed, for example, by a high frequency reactive sputtering method.

摘要翻译： 公开了一氧化碳检测装置，其在一氧化碳浓度的预选范围内显示出薄膜电流的逐步变化。 根据本发明，在一个实施例中，在绝缘层上形成主要为氧化锡（SnO 2）的第一膜，并且在所述第一膜上形成主要由铂（Pt）构成的第二膜。 第二膜的平均膜厚为约0.3〜30铂原子层。 在另一个实施方案中，金（Au）被引入所述第二膜中，第二膜的平均膜厚度为约0.3至30铂原子，金的量范围高达铂的50原子百分比。 在第三实施方案中，将由锑（Sb）和铋（Bi）组成的组中的供体引入到第一膜中，并且主要由具有受体的氧化锡（SnO 2）的中间膜加入，所述受体选自铂 （Pt），铝（Al）和硼（B）形成在所述第一和第二膜之间。 第一，中间和第二膜例如通过高频反应溅射法形成。

公开(公告)号：US4460673A

公开(公告)日：1984-07-17

申请号：US382475

申请日：1982-05-27

申请人： Kunio Sukigara ,  Toyoki Kazama

发明人： Kunio Sukigara ,  Toyoki Kazama

IPC分类号： C01B3/50 ,  C23C16/24 ,  C23C16/448 ,  G03G5/082 ,  B05D3/06

CPC分类号： C23C16/4488 ,  C01B3/503 ,  C23C16/24 ,  G03G5/08278 ,  C01B2203/0405 ,  C01B2203/041 ,  C01B2203/0465

摘要： Disclosed are method and apparatus for producing amorphous silicon layers for solar cells or electrophotography by plasma-enhanced chemical vapor deposition (CVD) through glow-discharge decomposition of a reaction gas containing monosilane or a higher order silicon hydride in a reaction chamber. Deposition rate and efficiency of reaction gas usage are improved by the selective removal of hydrogen gas reaction product from the reaction chamber. In one embodiment, a filter which is more permeable to hydrogen gas than to the reaction gas is placed in the vacuum pumping port of the reaction chamber. The filter comprises either a palladium film or a bundle of small diameter tubes made from a polyimide system polymer. In another embodiment of the invention, a porous sintered material containing La-Ni alloy is used to selectively adsorb hydrogen gas in the reaction chamber. In still another embodiment of the invention, a trap which collects reaction gas but passes hydrogen gas is used in the vacuum pump line connected to the chamber. The trap comprises a cell cooled to liquid nitrogen temperature for condensing the reaction gas but not the hydrogen. The collected reaction gas is recycled through the reaction chamber. The removal rate of hydrogen gas is controlled to maintain a desired hydrogen density in the reaction chamber, the hydrogen density being monitored by observing the intensity of hydrogen spectral lines in the glow discharge in the reaction chamber.

摘要翻译： 公开了通过在反应室中通过含有甲硅烷或高级氢化硅的反应气体的辉光放电分解，通过等离子体增强化学气相沉积（CVD）制造用于太阳能电池或电子照相的非晶硅层的方法和装置。 通过从反应室中选择性除去氢气反应产物，提高了反应气体使用的沉积速率和效率。 在一个实施例中，将比氢气更可渗透的过滤器置于反应室的真空泵送口中。 过滤器包括钯膜或由聚酰亚胺系聚合物制成的小直径管束。 在本发明的另一实施例中，使用含有La-Ni合金的多孔烧结材料来选择性地吸附反应室中的氢气。 在本发明的另一个实施例中，在连接到腔室的真空泵管线中使用收集反应气体但通过氢气的阱。 捕集器包括冷却至液氮温度的电池，用于冷凝反应气体而不是氢气。 收集的反应气体通过反应室再循环。 控制氢气的去除速率以保持反应室中所需的氢密度，通过观察反应室中的辉光放电中的氢谱线的强度来监测氢密度。

公开(公告)号：US4452828A

公开(公告)日：1984-06-05

申请号：US376632

申请日：1982-05-10

申请人： Masaharu Namba ,  Mitsuru Yamauchi ,  Toyoki Kazama

发明人： Masaharu Namba ,  Mitsuru Yamauchi ,  Toyoki Kazama

IPC分类号： H01L31/04 ,  C23C16/50 ,  H01L21/205 ,  H01L31/20 ,  B05D3/04 ,  B05D3/14

CPC分类号： H01L31/202 ,  C23C16/50 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  Y02E10/50 ,  Y02P70/521

摘要： Disclosed is an production method for plasma chemical vapor deposition (CVD) of amorphous silicon films providing improved throughput and film yield. According to the present invention, a glow discharge is generated in a reaction chamber containing a gaseous silicon-containing compound, such as monosilane (SiH.sub.4) or tetraflourosilane (SiF.sub.4), by the imposition of an electric field between a pair of spaced-apart electrodes within the chamber. The electric field is established by connecting an appropriate DC or high frequency driving voltage to one of the pair of electrodes and ground potential to the other. In the case where a high frequency driving voltage is used, connection to the driven electrode is made through a coupling capacitor, and the frequency of the driving voltage is selected such that a DC potential develops between the pair of electrodes. Substrates on which amorphous silicon films are to be deposited are positioned adjacent to each one of the electrodes, and the connections for the driving voltage and ground to the electrodes are periodically reversed during film deposition. In an alternative embodiment of the invention, multiple pairs of electrodes are arranged within the reaction chamber.

摘要翻译： 公开了提供提高生产量和膜产率的非晶硅膜的等离子体化学气相沉积（CVD）的制备方法。 根据本发明，通过在一对间隔开的电极之间施加电场，在含有气态含硅化合物如甲硅烷（SiH 4）或四氟乙烷（SiF 4））的反应室中产生辉光放电 在房间内 通过将适当的DC或高频驱动电压连接到一对电极中的一个和地电位而建立电场。 在使用高频驱动电压的情况下，通过耦合电容器与驱动电极的连接，选择驱动电压的频率使得在一对电极之间产生直流电位。 要沉积非晶硅膜的衬底位于每个电极附近，并且在膜沉积期间驱动电压和对电极的接地的连接周期性地反转。 在本发明的替代实施例中，多对电极布置在反应室内。

公开(公告)号：US4462862A

公开(公告)日：1984-07-31

申请号：US387219

申请日：1982-06-10

申请人： Toyoki Kazama ,  Michiro Shimatani

发明人： Toyoki Kazama ,  Michiro Shimatani

IPC分类号： G03G5/08 ,  G03G5/00 ,  G03G5/082 ,  G03G5/10 ,  G03G21/10 ,  H01L31/20 ,  C23F1/00 ,  B44C1/22

CPC分类号： H01L31/202 ,  G03G5/005 ,  G03G5/08214 ,  G03G5/102 ,  Y02E10/50 ,  Y02P70/521

摘要： Disclosed is a method for removing an amorphous silicon photosensitive layer from the metallic surface (e.g., aluminum or stainless steel) of a substrate used in electrophotography. The amorphous silicon layer is removed by exposing such layer to a plasma generated in a fluorine containing atmosphere. Such a plasma provides a high etch rate for the amorphous silicon layer and an extremely high silicon-to-metal etch selectivity. Therefore, the amorphous silicon layer may be rapidly removed by etching at a high power density without risk of damaging the polished metallic surface of the electrophotographic substrate. Moreover, since the etching automatically stops when the metallic surface is reached, no end-point detection is necessary.

摘要翻译： 公开了从电子照相术中使用的基板的金属表面（例如铝或不锈钢）去除非晶硅感光层的方法。 通过将这种层暴露于在含氟气氛中产生的等离子体来除去非晶硅层。 这种等离子体为非晶硅层提供了高蚀刻速率，并且具有极高的硅 - 金属蚀刻选择性。 因此，可以通过在高功率密度下进行蚀刻而快速去除非晶硅层，而不会损害电子照相基板的抛光金属表面的风险。 此外，由于当达到金属表面时蚀刻自动停止，因此不需要端点检测。