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公开(公告)号：US20110111551A1
公开(公告)日：2011-05-12
申请号：US13003936
申请日：2009-08-18
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/046 , H01L31/0463 , H01L31/0745 , H01L31/077 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
摘要翻译： 提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置制造方法。 光电转换装置的制造方法包括通过等离子体CVD法在衬底上形成硅光电转换层的步骤。 在光电转换装置的制造方法中，形成光电转换层的步骤包括形成由晶体硅形成的i层的步骤，以及在i层上在条件下形成n层的步骤 氢稀释比为0至10（含）。
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公开(公告)号：US08252668B2
公开(公告)日：2012-08-28
申请号：US13003936
申请日：2009-08-18
IPC分类号： H01L21/205
CPC分类号： H01L31/1804 , H01L31/046 , H01L31/0463 , H01L31/0745 , H01L31/077 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
摘要翻译： 提供一种通过快速形成具有良好覆盖率的n层实现高生产率和高转换效率的光电转换装置制造方法。 光电转换装置的制造方法包括通过等离子体CVD法在衬底上形成硅光电转换层的步骤。 在光电转换装置的制造方法中，形成光电转换层的步骤包括形成由晶体硅形成的i层的步骤，以及在i层上在条件下形成n层的步骤 氢稀释比为0至10（含）。
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公开(公告)号：US20080196761A1
公开(公告)日：2008-08-21
申请号：US12003261
申请日：2007-12-21
IPC分类号： H01L31/028
CPC分类号： H01L31/077 , H01L31/0236 , H01L31/056 , H01L31/076 , H01L31/182 , H01L31/1884 , Y02E10/52 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer on a transparent, electrically insulating substrate, and a photovoltaic layer containing mainly crystalline silicon-based semiconductors and a back electrode layer formed sequentially on the transparent electrode layer of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 μm to 2 μm, and a Raman ratio of from 3.0 to 8.0.
摘要翻译： 一种光电器件和用于生产光伏器件的方法，其结合了高的光电转换效率和高生产率。 光电器件至少包括透明电极承载基板，其通过在透明电绝缘基板上提供透明电极层，以及主要包含晶体硅基半导体的光电层和在透明电极上依次形成的背电极层 所述透明电极承载基板的所述透明电极承载基板的所述透明电极层的表面具有包含粗糙度和粗糙度的混合物的形状，并且对于波长具有20％以上的光谱雾度比 并且主要含有结晶硅系半导体的光电转换层的膜厚为1.2〜2μm，拉曼比为3.0〜8.0。
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公开(公告)号：US08859887B2
公开(公告)日：2014-10-14
申请号：US12997418
申请日：2009-07-08
IPC分类号： H01L31/105 , H01L31/18 , H01L27/142 , H01L31/076 , H01L31/077
CPC分类号： H01L27/1423 , H01L31/046 , H01L31/0463 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.
摘要翻译： 由于n层和背面透明电极层或中间接触层之间的接触特性的改善，显示出增加的开路电压和改善的填充因子的光电器件，以及用于制造光伏器件的工艺。 光伏器件包括具有层叠在衬底顶部上的p层，i层和n层的光电转换层，其中n层包括含氮的n层和形成在衬底上的界面处理层 含氮n层相对于基板的相对表面，含氮n层包含原子浓度为1％以上且20％以下的氮原子，结晶化比例不小于 0但小于3，并且界面处理层的结晶比不小于1且不大于6。
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公开(公告)号：US20110205556A1
公开(公告)日：2011-08-25
申请号：US13120295
申请日：2009-07-02
IPC分类号： G01B11/06
CPC分类号： G01B11/0625
摘要： A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transparent thin film and the second transparent thin film by using the obtained measurement values of the feature values and the feature-value characteristics stored in the storage section (14).
摘要翻译： 薄膜检查装置包括存储部分（14），其存储至少两个特征值特性，其中从光谱反射光谱中的特征值中选择的至少两个特征值受到在 第一透明薄膜和第二透明薄膜中的至少一个分别与第一透明薄膜的膜厚度和第二透明薄膜的膜厚相关联; 通过透明玻璃基板将白色光照射到检查对象基板（S）的光照射部（11） 接收从所述检查对象基板（S）反射的反射光的受光部（12）。 以及算术部（15），其从基于所接收的反射光生成的光谱反射光谱获得存储在所述存储部（14）中的特征量的测量值，并且计算所述第一透明薄膜和 通过使用获得的存储在存储部分（14）中的特征值和特征值特性的测量值来确定第二透明薄膜。
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公开(公告)号：US08482744B2
公开(公告)日：2013-07-09
申请号：US13120295
申请日：2009-07-02
IPC分类号： G01B11/28
CPC分类号： G01B11/0625
摘要： A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate. The apparatus has a storage section storing at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum; a light irradiation section irradiating the inspection-target substrate with white light through the transparent glass substrate; a light receiving section receiving light reflected from the inspection-target substrate; and an arithmetic section obtaining measurement values of the feature values stored in the storage section from the spectral reflectance spectrum based on the reflected light received by the light receiving section, and calculating the film thickness of each of the first transparent thin film and the second transparent thin film.
摘要翻译： 薄膜检查装置在透明玻璃基板上计算包括第一透明薄膜和第二透明薄膜的透明导电薄膜的检查对象基板的第一透明薄膜和第二透明薄膜的膜厚。 该装置具有存储至少两个特征值特性的存储部分，其中从光谱反射光谱中的特征值中选择的至少两个特征值; 光照射部，通过透明玻璃基板照射检查对象基板的白色光; 接收从检查对象基板反射的光的受光部; 以及算术部，基于由所述受光部所接收的反射光，从所述光谱反射率光谱求出存储在所述存储部中的特征量的测量值，并且计算所述第一透明薄膜和所述第二透明薄膜 薄膜。
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公开(公告)号：US07956999B2
公开(公告)日：2011-06-07
申请号：US12934717
申请日：2009-07-02
CPC分类号： G01N21/9501 , G01N21/3563 , G01N21/55 , G01N21/8422 , G01R31/2831 , H01L31/1884 , Y10T29/53126
摘要： An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance.
摘要翻译： 目的是以非破坏性和非接触的方式高精度地有效地测量透明导电膜的电阻率。 提供了一种电阻率测试装置，其包括：发光装置，其将具有通过预先进行的测试条件选择方法选择的波长的p偏振发射光朝向透明导电膜形成，所述透明导电膜形成在沿着制造线传送的透光基板 从膜表面侧以该方法选择的入射角; 检测在透明导电膜上反射的反射光的光检测装置; 以及信息处理器，其基于所检测的光的强度来计算与所述反射光的相对于所述波长的光量相关的评价值，并且通过使用相关特性从所计算的评估值获得电阻率，其中， 评估值和电阻率预先相互关联。
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公开(公告)号：US20110120521A1
公开(公告)日：2011-05-26
申请号：US13003615
申请日：2009-08-20
IPC分类号： H01L31/042
CPC分类号： C23C14/086 , B23K26/0622 , B23K26/0853 , B23K26/36 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , C23C14/3407 , H01L31/022483 , H01L31/0547 , H01L31/0687 , H01L31/076 , H01L31/1884 , Y02E10/52 , Y02E10/544 , Y02E10/548
摘要： Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096≦x≦0.183).
摘要翻译： 提供了将氢等离子体曝光后的导电率设定在适当范围内的光电转换装置，能够抑制漏电流，提高转换效率。 光电转换装置在基板上包括具有至少两个发电单元层的光电转换层和设置在发电单元层之间的中间接触层。 中间接触层主要含有由Zn1-xMgxO（0.096＆nlE; x＆nlE; 0.183）表示的化合物。
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公开(公告)号：US20100170565A1
公开(公告)日：2010-07-08
申请号：US12602255
申请日：2008-12-05
IPC分类号： H01L31/105 , H01L31/00 , H01L31/18
CPC分类号： H01L31/075 , H01L21/02532 , H01L21/02579 , H01L21/02595 , H01L21/0262 , H01L31/028 , H01L31/076 , H01L31/077 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%. Alternatively, an interface layer may be formed at the interface between the n-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%.
摘要翻译： 提供了由于开路电压增加而具有提高的转换效率的光伏器件。 光电器件包括具有叠层的p层，i层和n层的光伏层，其中p层是含有原子浓度不小于1％且不大于1的氮原子的含氮层 25％，p层的结晶化比例不小于0但小于3.或者，n层可以是含有原子浓度不小于1％的氮原子的含氮层，而不是 大于20％，其中n层的结晶比不小于0但小于3.或者，可以在p层和i层之间的界面处形成界面层，其中界面层 是含有原子浓度为1％以上且30％以下的氮原子的含氮层。 或者，可以在n层和i层之间的界面处形成界面层，其中界面层是含有原子浓度不小于1％且不大于20的氮原子的含氮层 ％。
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公开(公告)号：US08598447B2
公开(公告)日：2013-12-03
申请号：US13003615
申请日：2009-08-20
IPC分类号： H01L31/042
CPC分类号： C23C14/086 , B23K26/0622 , B23K26/0853 , B23K26/36 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , C23C14/3407 , H01L31/022483 , H01L31/0547 , H01L31/0687 , H01L31/076 , H01L31/1884 , Y02E10/52 , Y02E10/544 , Y02E10/548
摘要： Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096≦x≦0.183).
摘要翻译： 提供了将氢等离子体曝光后的导电率设定在适当范围内的光电转换装置，能够抑制漏电流，提高转换效率。 光电转换装置在基板上包括具有至少两个发电单元层的光电转换层和设置在发电单元层之间的中间接触层。 中间接触层主要含有由Zn1-xMgxO（0.096 @ x @ 0.183）表示的化合物。
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