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    Method and apparatus for producing compound semiconductor single crystal of high decomposition pressure
    1.
    发明授权
    Method and apparatus for producing compound semiconductor single crystal of high decomposition pressure 失效
    具有高分解压力的化合物半导体单晶的制造方法和装置

    公开(公告)号：US5373808A

    公开(公告)日：1994-12-20

    申请号：US50325

    申请日：1993-05-19

    申请人： Koichi Sassa ,  Takashi Atami ,  Keiji Shirata

    发明人： Koichi Sassa ,  Takashi Atami ,  Keiji Shirata

    IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/22

    CPC分类号： C30B15/02 ,  C30B15/00 ,  C30B29/42 ,  Y10T117/1032 ,  Y10T117/1064

    摘要： An apparatus and a method are presented for preparing a single crystal ingot of a compound semiconductor material which contains a high vapor pressure component. The apparatus includes: a furnace housing 78 housing a cylindrical hermetic vessel 20 having a ceiling plate section 22A and a bottom plate section 42. External heaters 36, 38 and 40 surrounding the hermetic vessel 20, and a vapor pressure control section which communicates hermetically with the vessel 20. The vapor pressure control section includes: a vapor pressure control tube 98 having a hermetic inner space formed between an inner wall 102 and a coaxial outer wall 100; a communication conduit 96 which hermetically communicates the inner space of the vapor pressure control tube 98 with the inner space of the vessel 20; heat pipes 108, 112 extending along at least one of either the inner wall or the outer wall; control heaters 110, 114 disposed both on the inside of the inner wall and on the outside of the outer wall of the vapor pressure control section 98.

    摘要翻译： PCT No.PCT / JP91 / 01547 Sec。 371日期：1993年5月19日 102（e）日期1993年5月19日PCT 1991年11月12日PCT PCT。 出版物WO93 / 22040 日期为1993年11月11日。提出了一种制备含有高蒸汽压成分的化合物半导体材料的单晶锭的装置和方法。 该装置包括：炉壳78，其容纳具有顶板部分22A和底板部分42的圆柱形密封容器20.围绕密封容器20的外部加热器36,38和40以及气密控制部分 蒸汽压力控制部分包括：蒸汽压力控制管98，其具有形成在内壁102和同轴外壁100之间的气密内部空间; 将蒸气压控制管98的内部空间与容器20的内部空间气密地连通的连通导管96; 沿着内壁或外壁中的至少一个延伸的热管108,112; 控制加热器110,114设置在蒸汽压控制部分98的内壁的内侧和外壁上。

    Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus
    2.
    发明授权
    Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus 失效
    用于防止单晶拉制装置中加热器电极熔化的装置

    公开(公告)号：US5843228A

    公开(公告)日：1998-12-01

    申请号：US825637

    申请日：1997-04-01

    申请人： Masao Saitoh ,  Daisuke Wakabayashi ,  Takashi Atami ,  Hisashi Furuya

    发明人： Masao Saitoh ,  Daisuke Wakabayashi ,  Takashi Atami ,  Hisashi Furuya

    IPC分类号： H05B3/00 ,  C30B15/14 ,  C30B15/18 ,  C30B15/20 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/18 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1088

    摘要： The invention is directed to preventing meltdown of conductive metal electrodes 5, 5 used to supply current to a heater 104 of a crucible 103. A single crystal pulling apparatus comprises: the heater 104 which encircles the crucible 103, and the pair of electrodes 5, 5, respectively threaded to a pair of graphite intermediate electrodes 6 of the heater 104, and a voltage source 9 for supplying power to the pair of electrodes 5, 5. A switch 11 switches the power on and off. A watthour meter 10a, continuously measures the current flowing through the heater 104. Investigation by the present inventors showed that in the case of a crack 8 in a lower portion of the intermediate electrode 6, minute fluctuations occurred in the measured value of the current, arising from an electric discharge phenomena in the crack 8 prior to meltdown of the electrodes 5, 5. Therefore, if fluctuations in the electric current measured by the wattmeter 10a are outside of a tolerance range, the controller 12 switches off the switch 11, thus interrupting power to the electrodes 5, 5, and preventing meltdown of the electrodes 5, 5.

    摘要翻译： 本发明旨在防止用于向坩埚103的加热器104提供电流的导电金属电极5,5的熔化。单晶拉制装置包括：围绕坩埚103的加热器104和一对电极5， 分别连接到加热器104的一对石墨中间电极6和用于向一对电极5,5的供电的电压源9.开关11切断电源。 电度表10a连续地测量流过加热器104的电流。本发明人的研究结果表明，在中间电极6的下部的裂纹8的情况下，电流的测量值发生微小的波动， 由电极5,5的熔断之前的裂纹8中的放电现象引起。因此，如果由瓦特计10a测量的电流的波动超出公差范围，则控制器12将开关11断开 中断对电极5,5的电力，并防止电极5,5的熔化。

    Single crystal pulling apparatus
    3.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5871581A

    公开(公告)日：1999-02-16

    申请号：US781841

    申请日：1997-01-10

    申请人： Takashi Atami ,  Hiroaki Taguchi ,  Hisashi Furuya ,  Michio Kida

    发明人： Takashi Atami ,  Hiroaki Taguchi ,  Hisashi Furuya ,  Michio Kida

    IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B29/06 ,  C30B29/42 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/12 ,  C30B15/02 ,  Y10T117/10 ,  Y10T117/1052 ,  Y10T117/1056

    摘要： A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.

    摘要翻译： 一种单晶拉制装置，包括：气密性容器，用于将密封容器内的半导体熔体储存在包括在下边缘连接的外坩埚和内坩埚的气密容器内的双坩埚，以及源材料供给装置， 在外坩埚和内坩埚之间的位置处的半导体熔体，其特征在于，在所述外坩埚和所述内坩埚之间的所述半导体熔融区域的内部设置限流构件，以限制所述半导体熔体的流动。

    Single crystal pulling apparatus
    6.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5873938A

    公开(公告)日：1999-02-23

    申请号：US774183

    申请日：1996-12-26

    申请人： Takashi Atami ,  Hisashi Furuya ,  Michio Kida

    发明人： Takashi Atami ,  Hisashi Furuya ,  Michio Kida

    IPC分类号： C30B15/12 ,  C30B35/00

    CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1056

    摘要： A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.

    摘要翻译： 其中将半导体熔体储存在外坩埚中的单晶拉制装置和用作分隔体的圆柱形内坩埚安装在外坩埚内部，从而形成双坩埚，并将半导体单晶从 半导体在内坩埚内熔化。 内坩埚包含形成于双坩埚形成时的连通部，用于使半导体熔体流入内坩埚，并且连通部包括用于去除粘附到连通部的气泡的布置。

    Single crystal pulling apparatus
    7.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5895527A

    公开(公告)日：1999-04-20

    申请号：US791777

    申请日：1997-01-29

    申请人： Hiroaki Taguchi ,  Takashi Atami ,  Hisashi Furuya ,  Masanori Fukui ,  Michio Kida

    发明人： Hiroaki Taguchi ,  Takashi Atami ,  Hisashi Furuya ,  Masanori Fukui ,  Michio Kida

    IPC分类号： C30B15/02 ,  C30B15/12 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/12 ,  Y10T117/10

    摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.

    摘要翻译： 本发明涉及一种单晶拉制装置，包括： 位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶 半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B， 内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

    Single crystal pulling apparatus
    9.
    发明授权
    Single crystal pulling apparatus 失效
    单晶拉丝机

    公开(公告)号：US5779792A

    公开(公告)日：1998-07-14

    申请号：US781843

    申请日：1997-01-10

    申请人： Takashi Atami ,  Hisashi Furuya ,  Michio Kida

    发明人： Takashi Atami ,  Hisashi Furuya ,  Michio Kida

    IPC分类号： C30B15/12 ,  C30B15/02 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/02 ,  C30B15/305 ,  Y10T117/1056

    摘要： The present invention provides an improved single crystal pulling apparatus for pulling a single crystal semiconductor such as silicon or gallium arsenide. The apparatus of the present invention comprises a gas tight container, a crucible which is disposed inside the container, a heater, and a pair of coils to apply a cusp magnetic field in the semiconductor melt. The crucible is separated into two regions by a cylindrical partition body, and an outside region is used to supply source material and to melt the source material and an inside region is used for pulling up the single crystal. The inside and outside regions are communicated with the communication passage provided at the bottom of the partition body. Electrical currents in opposing directions are applied to a pair of coils for generating in the melt a cusp magnetic field which includes a vertical portion and a horizontal portion relative to the crucible. By positioning the vertical portion of the cusp magnetic field at the position of the communication passage and the horizontal portion below the semiconductor melt, the flow rate of the melt passing through the communication passage is reduced and the convection within the melt is suppressed. Consequently, high quality semiconductor single crystals can be obtained.

    摘要翻译： 本发明提供一种用于拉取诸如硅或砷化镓的单晶半导体的改进的单晶拉制装置。 本发明的装置包括气密容器，设置在容器内的坩埚，加热器和一对在半导体熔体中施加尖点磁场的线圈。 坩埚通过圆柱形分隔体分成两个区域，并且使用外部区域来供应源材料并熔化源材料，并且使用内部区域来拉出单晶。 内部和外部区域与设置在分隔体底部的连通通道连通。 相反方向的电流被施加到一对线圈，用于在熔体中产生包括相对于坩埚的垂直部分和水平部分的尖点磁场。 通过将尖点磁场的垂直部分定位在连通通道的位置和半导体熔体下方的水平部分，通过连通通道的熔体的流速减小，并且熔体内的对流被抑制。 因此，可以获得高质量的半导体单晶。