Apparatus for preventing heater electrode meltdown in single crystal
pulling apparatus
    1.
    发明授权
    Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus 失效
    用于防止单晶拉制装置中加热器电极熔化的装置

    公开(公告)号:US5843228A

    公开(公告)日:1998-12-01

    申请号:US825637

    申请日:1997-04-01

    摘要: The invention is directed to preventing meltdown of conductive metal electrodes 5, 5 used to supply current to a heater 104 of a crucible 103. A single crystal pulling apparatus comprises: the heater 104 which encircles the crucible 103, and the pair of electrodes 5, 5, respectively threaded to a pair of graphite intermediate electrodes 6 of the heater 104, and a voltage source 9 for supplying power to the pair of electrodes 5, 5. A switch 11 switches the power on and off. A watthour meter 10a, continuously measures the current flowing through the heater 104. Investigation by the present inventors showed that in the case of a crack 8 in a lower portion of the intermediate electrode 6, minute fluctuations occurred in the measured value of the current, arising from an electric discharge phenomena in the crack 8 prior to meltdown of the electrodes 5, 5. Therefore, if fluctuations in the electric current measured by the wattmeter 10a are outside of a tolerance range, the controller 12 switches off the switch 11, thus interrupting power to the electrodes 5, 5, and preventing meltdown of the electrodes 5, 5.

    摘要翻译: 本发明旨在防止用于向坩埚103的加热器104提供电流的导电金属电极5,5的熔化。单晶拉制装置包括:围绕坩埚103的加热器104和一对电极5, 分别连接到加热器104的一对石墨中间电极6和用于向一对电极5,5的供电的电压源9.开关11切断电源。 电度表10a连续地测量流过加热器104的电流。本发明人的研究结果表明,在中间电极6的下部的裂纹8的情况下,电流的测量值发生微小的波动, 由电极5,5的熔断之前的裂纹8中的放电现象引起。因此,如果由瓦特计10a测量的电流的波动超出公差范围,则控制器12将开关11断开 中断对电极5,5的电力,并防止电极5,5的熔化。

    Single crystal growth method
    2.
    发明授权
    Single crystal growth method 失效
    单晶生长法

    公开(公告)号:US5408952A

    公开(公告)日:1995-04-25

    申请号:US962185

    申请日:1992-12-28

    摘要: In the present invention a signal is caused to fall on the molten liquid surface of single crystal raw material which was put into a crucible, the position of the molten liquid surface is measured by detecting the reflected signal coming from the molten liquid surface and the crucible is lifted according to the discrepancy to the set value.

    摘要翻译: PCT No.PCT / JP91 / 01790 Sec。 371日期1992年12月28日 102(e)1992年12月28日PCT PCT 1991年12月27日PCT公布。 WO92 / 19797 PCT出版物 日本1992年11月12日。在本发明中,使信号落在放入坩埚中的单晶原料的熔融液面上,通过检测熔融液面的反射信号,测定熔融液面的位置 熔融液面和坩埚根据偏差提升到设定值。

    Capacitive sensor
    3.
    发明授权
    Capacitive sensor 有权
    电容传感器

    公开(公告)号:US08176782B2

    公开(公告)日:2012-05-15

    申请号:US12296554

    申请日:2007-04-25

    IPC分类号: G01P15/125

    摘要: A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress.

    摘要翻译: 电容式传感器包括固定电极和可动电极,其通过梁部分由锚固部分可移动地支撑。 固定电极和可动电极彼此间隔开间隔开,构成检测部。 检测适合于间隙尺寸的电容以检测预定的物理值。 连接到锚固部分的梁部分的端部和连接到可动电极的梁部分的端部中的至少一个设置有缓和应力的应力调节单元。

    CAPACITIVE SENSOR
    4.
    发明申请
    CAPACITIVE SENSOR 有权
    电容式传感器

    公开(公告)号:US20090266164A1

    公开(公告)日:2009-10-29

    申请号:US12296554

    申请日:2007-04-25

    IPC分类号: G01P15/125

    摘要: A capacitive sensor includes a fixed electrode and a movable electrode that is movably supported by an anchor portion through a beam portion. The fixed electrode and the movable electrode are opposed to each other with a gap interposed therebetween, thereby constituting a detecting unit. A capacitance suitable for a size of the gap is detected to detect a predetermined physical value. At least one of an end of the beam portion connected to the anchor portion and an end of the beam portion connected to the movable electrode is provided with a stress moderating unit that moderates a stress.

    摘要翻译: 电容式传感器包括固定电极和可动电极,其通过梁部分由锚固部分可移动地支撑。 固定电极和可动电极彼此间隔开间隔开,构成检测部。 检测适合于间隙尺寸的电容以检测预定的物理值。 连接到锚固部分的梁部分的端部和连接到可动电极的梁部分的端部中的至少一个设置有缓和应力的应力调节单元。

    Method for manufacturing silicon single crystal
    5.
    发明申请
    Method for manufacturing silicon single crystal 有权
    硅单晶的制造方法

    公开(公告)号:US20060130737A1

    公开(公告)日:2006-06-22

    申请号:US10521035

    申请日:2003-07-07

    摘要: A silicon single crystal rod (24) is pulled from a silicon melt (13) molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.

    摘要翻译: 从由加热器(17)熔化的硅熔体(13)中拉出硅单晶棒(24),并且每隔预定时间将硅单晶棒的直径变化反馈到硅单晶的拉拔速度 晶棒和加热器的温度,从而控制硅单晶棒的直径。 将控制多个级上的PID常数的PID控制应用于控制硅单晶棒的拉拔速度的方法,使得硅单晶棒具有目标直径,以及控制加热器温度的方法 使硅单晶棒具有目标温度。 设定硅单晶棒的设定拉拔速度使得V / G变得恒定,并且实际的拉拔速度被精确地控制以与设定的牵引速度相匹配,从而抑制单晶棒的直径的波动。

    Method of producing silicon monocrystal
    7.
    发明授权
    Method of producing silicon monocrystal 有权
    硅单晶的生产方法

    公开(公告)号:US07195669B2

    公开(公告)日:2007-03-27

    申请号:US10521035

    申请日:2003-07-07

    IPC分类号: C30B25/12

    摘要: A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.

    摘要翻译: 从由加热器(17)熔化的硅熔体(13)拉出硅单晶棒(24),并且每隔预定时间将硅单晶棒的直径变化反馈到硅的拉伸速度 单晶棒和加热器的温度,从而控制硅单晶棒的直径。 将控制多个级上的PID常数的PID控制应用于控制硅单晶棒的拉拔速度的方法,使得硅单晶棒具有目标直径,以及控制加热器温度的方法 使硅单晶棒具有目标温度。 设定硅单晶棒的设定拉拔速度使得V / G变得恒定,并且实际的拉拔速度被精确地控制以与设定的牵引速度相匹配,从而抑制单晶棒的直径的波动。

    Semiconductor acceleration sensor and method of manufacturing the same
    8.
    发明授权
    Semiconductor acceleration sensor and method of manufacturing the same 失效
    半导体加速度传感器及其制造方法

    公开(公告)号:US07107847B2

    公开(公告)日:2006-09-19

    申请号:US10867701

    申请日:2004-06-16

    IPC分类号: G01P15/12

    摘要: A semiconductor acceleration sensor comprises: a frame having an opening inside thereof; flexible beams extending from the frame to the inside of the opening of the frame; a weight suspended from and supported by the beams so that the weight can freely move; piezoresistors to be mounted on the beams and to vary the resistance values in response to accelerations which work on the piezoresistors. The frame comprises damper plate portions, each of which covers a part of the opening spanning from a corner portion of two neighboring sides of the frame on the side of the opening to the inside of the opening, and each of which serves serve as a stopper to limit movement of the weight. The weight has corner portions which face the corner portions, respectively, and each of which is chamfered to have a shape of arc or a polygonal line consisting of at least three sides as seen in plan view. Thereby, the breaking strength of each stopper is increased, and hence a semiconductor acceleration sensor having superior shock resistance can be obtained.

    摘要翻译: 半导体加速度传感器包括:在其内部具有开口的框架; 从框架延伸到框架的开口的内部的柔性梁; 由梁悬挂和支撑的重物,使重物能自由移动; 压敏电阻器被安装在光束上并且响应于在压敏电阻器上工作的加速度来改变电阻值。 框架包括阻尼板部分,每个阻挡板部分覆盖从开口至开口内侧的框架的两个相邻侧的角部的开口的一部分,每个开口用作止动件 限制重量的移动。 该重量具有分别面对拐角部分的角部,并且如平面图所示,每个角部被倒角成具有由至少三个侧面组成的弧形或多边形线。 因此,每个制动器的断裂强度增加,因此可以获得具有优异抗冲击性的半导体加速度传感器。