Thin film EL devices and process for producing the same
    3.
    发明授权
    Thin film EL devices and process for producing the same 失效
    薄膜EL器件及其制造方法

    公开(公告)号:US4707419A

    公开(公告)日:1987-11-17

    申请号:US867814

    申请日:1986-05-27

    IPC分类号: H05B33/18 B32B9/04 B32B17/06

    CPC分类号: H05B33/18 Y10S428/917

    摘要: The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200.degree. C. to 700.degree. C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.

    摘要翻译: 本发明提供了一种薄膜EL器件,其包括电极层,发光层和形成在衬底上的电极层,以及介于三层之间的绝缘层,所述发射层含有稀土元素的原子 和氟原子在其主体材料中,氟原子(F)与稀土原子(RE)的原子比(F / RE)被调整到0.5至2.5的范围,以及制造EL器件的方法 其特征在于,通过在基本上不含氧气和/或水分的条件下形成膜并在200℃至700℃的温度下对膜进行热处理来制备发光层,使得主体 发光层的材料在0.5〜2.5的范围内含有稀土元素(RE)的原子和调整原子比(F / RE)的氟原子(F)。 本发明提供了例如以高亮度发出绿色发光的薄膜EL器件。

    Method for producing thin-film electro luminescent device
    4.
    发明授权
    Method for producing thin-film electro luminescent device 失效
    薄膜电致发光器件的制造方法

    公开(公告)号:US5614133A

    公开(公告)日:1997-03-25

    申请号:US415473

    申请日:1995-03-31

    CPC分类号: H05B33/10

    摘要: The present invention is directed to a method and an apparatus for producing thin-film EL devices with short annealing treatment times and excellent productivity.A substrate to be subjected to annealing treatment is mounted on the surface of a stage. The substrate to be treated is constructed by forming lower electrodes, a lower insulating layer, an EL layer and an upper insulating layer in that order on a translucent substrate. Light-irradiating means is provided above and opposite the surface of the stage. The light-irradiating means includes a plurality of light sources and a reflecting panel, and the light sources are situated along each of a plurality of concavities provided in the reflecting panel. Light from the light sources irradiates roughly the entire surface of the substrate to be treated. The light from the light sources is selected so as to include the absorption wavelength band of the electrode material of the lower electrodes on the substrate. When a prescribed temperature is reached, the light irradiation is terminated to allow cooling.

    摘要翻译: 本发明涉及一种用于制造短退火处理时间和优异生产率的薄膜EL器件的方法和设备。 将要进行退火处理的基材安装在载物台的表面上。 通过在半透明基板上依次形成下电极,下绝缘层,EL层和上绝缘层来构成被处理基板。 在舞台的表面的上方和对面设置有光照射装置。 光照射装置包括多个光源和反射面板,并且光源沿着设置在反射面板中的多个凹部中的每一个设置。 来自光源的光大致照射待处理的基板的整个表面。 选择来自光源的光,以便包括基板上的下电极的电极材料的吸收波长带。 当达到规定的温度时,光照射终止以允许冷却。

    Apparatus for vapor deposition
    6.
    发明授权
    Apparatus for vapor deposition 失效
    气相沉积装置

    公开(公告)号:US5223305A

    公开(公告)日:1993-06-29

    申请号:US698797

    申请日:1991-05-13

    CPC分类号: C23C16/46 C23C16/455

    摘要: An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.

    摘要翻译: 一种用于气相沉积的装置,包括连接至少一个半导体材料供应通道和至少一个醇盐材料供应通道的气相沉积部分,为蒸镀部设置的第一加热装置,并且能够将其温度保持在高于 所述醇盐供给路径,为半导体材料供给路设置的第二加热单元,其温度保持为高于蒸镀部的温度;以及第三加热单元,设置在所述醇盐材料供给路径上,能够保持其温度恒定 ,以及在基板上连续形成多层膜的工序。

    Electroluminescent device
    8.
    发明授权
    Electroluminescent device 失效
    电致发光器件

    公开(公告)号:US5087531A

    公开(公告)日:1992-02-11

    申请号:US442634

    申请日:1989-11-29

    摘要: Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

    摘要翻译: 公开了一种电致发光器件,其在衬底上包括衬底和电致发光膜,其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构,并且含有浓度(Ci)为0.5-4atm的电致发光中心元件。 的厚度为0.2微米,并且浓度(Cr)为0.15〜0.7at。 %,并且C 1大于Cr,以及其制备方法。