公开(公告)号：US5614133A

公开(公告)日：1997-03-25

申请号：US415473

申请日：1995-03-31

申请人： Koichi Tanaka ,  Masaru Yoshida

发明人： Koichi Tanaka ,  Masaru Yoshida

IPC分类号： H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  G09K11/00

CPC分类号： H05B33/10

摘要： The present invention is directed to a method and an apparatus for producing thin-film EL devices with short annealing treatment times and excellent productivity.A substrate to be subjected to annealing treatment is mounted on the surface of a stage. The substrate to be treated is constructed by forming lower electrodes, a lower insulating layer, an EL layer and an upper insulating layer in that order on a translucent substrate. Light-irradiating means is provided above and opposite the surface of the stage. The light-irradiating means includes a plurality of light sources and a reflecting panel, and the light sources are situated along each of a plurality of concavities provided in the reflecting panel. Light from the light sources irradiates roughly the entire surface of the substrate to be treated. The light from the light sources is selected so as to include the absorption wavelength band of the electrode material of the lower electrodes on the substrate. When a prescribed temperature is reached, the light irradiation is terminated to allow cooling.

摘要翻译： 本发明涉及一种用于制造短退火处理时间和优异生产率的薄膜EL器件的方法和设备。 将要进行退火处理的基材安装在载物台的表面上。 通过在半透明基板上依次形成下电极，下绝缘层，EL层和上绝缘层来构成被处理基板。 在舞台的表面的上方和对面设置有光照射装置。 光照射装置包括多个光源和反射面板，并且光源沿着设置在反射面板中的多个凹部中的每一个设置。 来自光源的光大致照射待处理的基板的整个表面。 选择来自光源的光，以便包括基板上的下电极的电极材料的吸收波长带。 当达到规定的温度时，光照射终止以允许冷却。

公开(公告)号：US5372839A

公开(公告)日：1994-12-13

申请号：US789818

申请日：1991-11-12

申请人： Akiyoshi Mikami ,  Koichi Tanaka ,  Kouji Taniguchi ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Akiyoshi Mikami ,  Koichi Tanaka ,  Kouji Taniguchi ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C09K11/61 ,  C09K11/77 ,  C09K11/88 ,  C23C16/30 ,  H05B33/10 ,  H05B33/14 ,  B05D5/12

CPC分类号： C23C16/306 ,  C09K11/612 ,  C09K11/613 ,  C09K11/7702 ,  C09K11/7703 ,  C09K11/883 ,  C09K11/885 ,  C09K11/886 ,  H05B33/10 ,  H05B33/14

摘要： A process for preparing an electroluminescent film which comprises causing a substrate held at a high temperature to simultaneous contact two kinds of vapors of (a) Group II element and a Group VI element or a compound thereof, capable of forming a Group II-VI compound semiconductor, and (b) a halide of an element capable of acting as luminescent centers in the Group II-VI compound semiconductor, in the presence of flowing hydrogen or an inert gas, whereby a thin electroluminescent film comprising the Group II-VI compound semiconductor and containing the element forming the luminescent centers is formed on the surface of the substrate.

摘要翻译： 一种制备电致发光膜的方法，其包括使保持在高温下的基板同时接触能够形成II-VI族化合物的（a）II族元素和VI族元素或其化合物的两种蒸气 半导体，和（b）在流动的氢气或惰性气体的存在下，能够作为II-VI族化合物半导体中的发光中心的元素的卤化物，由此得到包含II-VI族化合物半导体 并且在衬底的表面上形成含有形成发光中心的元件。

公开(公告)号：US5223305A

公开(公告)日：1993-06-29

申请号：US698797

申请日：1991-05-13

申请人： Koichi Tanaka ,  Kousuke Terada ,  Katsushi Okibayashi ,  Akiyoshi Mikami ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Koichi Tanaka ,  Kousuke Terada ,  Katsushi Okibayashi ,  Akiyoshi Mikami ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： H05B33/10 ,  C23C16/18 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  H01L21/205

CPC分类号： C23C16/46 ,  C23C16/455

摘要： An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.

摘要翻译： 一种用于气相沉积的装置，包括连接至少一个半导体材料供应通道和至少一个醇盐材料供应通道的气相沉积部分，为蒸镀部设置的第一加热装置，并且能够将其温度保持在高于 所述醇盐供给路径，为半导体材料供给路设置的第二加热单元，其温度保持为高于蒸镀部的温度;以及第三加热单元，设置在所述醇盐材料供给路径上，能够保持其温度恒定 ，以及在基板上连续形成多层膜的工序。

公开(公告)号：US5185181A

公开(公告)日：1993-02-09

申请号：US721711

申请日：1991-06-26

申请人： Akiyoshi Mikami ,  Kousuke Terada ,  Katsushi Okibayashi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Akiyoshi Mikami ,  Kousuke Terada ,  Katsushi Okibayashi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： H05B33/10 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H05B33/12 ,  H05B33/14

CPC分类号： C23C16/45591 ,  C23C16/306 ,  C23C16/455

摘要： A process is provided for preparing uniform and homogeneous thin films such as ZnS:M film on the substrates having a large area by CVD under a reduced pressure, wherein as many plural substrates as possible can be subjected to the CVD treatment in the same apparatus without decreasing a growth rate of the film. Accordingly, EL displays having a large area which possess a high quality and can be manufactured efficiently.

摘要翻译： 提供了一种通过CVD在减压下在具有大面积的基板上制备均匀且均匀的薄膜如ZnS：M膜的方法，其中尽可能多的多个基板可以在相同的装置中进行CVD处理而没有 降低电影的增长率。 因此，EL显示器具有高质量的大面积并且可以有效地制造。

公开(公告)号：US5087531A

公开(公告)日：1992-02-11

申请号：US442634

申请日：1989-11-29

申请人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C09K11/57 ,  C09K11/88 ,  H05B33/10 ,  H05B33/14

CPC分类号： H05B33/14 ,  C09K11/574 ,  C09K11/883 ,  H05B33/10 ,  Y10S428/917

摘要： Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

摘要翻译： 公开了一种电致发光器件，其在衬底上包括衬底和电致发光膜，其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构，并且含有浓度（Ci）为0.5-4atm的电致发光中心元件。 的厚度为0.2微米，并且浓度（Cr）为0.15〜0.7at。 ％，并且C 1大于Cr，以及其制备方法。

公开(公告)号：US5334250A

公开(公告)日：1994-08-02

申请号：US22742

申请日：1993-02-17

申请人： Akiyoshi Mikami ,  Takashi Ogura ,  Kousuke Terada ,  Masaru Yoshida ,  Takuo Yamashita ,  Koichi Tanaka ,  Katsushi Okibayashi ,  Shigeo Nakajima ,  Hiroaki Nakaya ,  Kouji Taniguchi

发明人： Akiyoshi Mikami ,  Takashi Ogura ,  Kousuke Terada ,  Masaru Yoshida ,  Takuo Yamashita ,  Koichi Tanaka ,  Katsushi Okibayashi ,  Shigeo Nakajima ,  Hiroaki Nakaya ,  Kouji Taniguchi

IPC分类号： H05B33/10 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  H01L21/205

CPC分类号： C23C16/455 ,  C23C16/45591

摘要： A vapor deposition apparatus for depositing thin film on substrates in which solid starting materials are used. In this apparatus, a carrier gas flows up and down in the same direction as gas convection, such that the effect of gas convection is minimized and film thickness and impurity concentration are uniform over the substrate surface. This uniformity is achieved by orienting a main reaction tube in a vertical direction, attaching two branch reaction tubes at the top of the main reaction tube, and venting carrier gas out the bottom of the main reaction tube. Alternately, the main reaction tube can be oriented horizontally, with the substrates being carried on a holder within a container having pores on its top and bottom.

摘要翻译： 一种用于在其中使用固体起始材料的基底上沉积薄膜的气相沉积设备。 在该装置中，载流气体沿与气体对流相同的方向上下流动，使得气体对流的作用最小化，并且膜厚度和杂质浓度在基板表面上是均匀的。 通过使主反应管在垂直方向取向，在主反应管的顶部安装两个分支反应管，并将载气从主反应管的底部排出，实现均匀性。 或者，主反应管可以水平取向，衬底被承载在具有其顶部和底部上的孔的容器内的保持器上。

公开(公告)号：US4727004A

公开(公告)日：1988-02-23

申请号：US932034

申请日：1986-11-18

申请人： Koichi Tanaka ,  Takashi Ogura ,  Koji Taniguchi ,  Akiyoshi Mikami ,  Masaru Yoshida

发明人： Koichi Tanaka ,  Takashi Ogura ,  Koji Taniguchi ,  Akiyoshi Mikami ,  Masaru Yoshida

IPC分类号： C09K11/77 ,  C09K11/84 ,  H05B33/14 ,  H05B33/20

CPC分类号： H05B33/20 ,  C09K11/7731 ,  H05B33/14

摘要： A thin film EL device having a double-insulated structure and comprising an emitting layer made of an alkaline-earth sulfide as its host material and doped with Eu.sup.2+ for providing luminescent centers. The emitting layer has a Eu concentration of 0.15 to 0.75 atm. % and a controlled thickness of at least 1.3 .mu.m to impart hysteresis to the brightness vs. applied voltage characteristics of the device.

摘要翻译： 一种具有双重绝缘结构的薄膜EL器件，包括由碱土金属硫化物作为其主体材料并且掺杂有用于提供发光中心的Eu 2+的发射层。 发光层的Eu浓度为0.15〜0.75atm。 ％和可控厚度至少为1.3μm，以对器件的亮度与施加的电压特性产生迟滞。

公开(公告)号：US4717858A

公开(公告)日：1988-01-05

申请号：US819217

申请日：1986-01-15

申请人： Koichi Tanaka ,  Takashi Ogura ,  Koji Ianiguchi ,  Akiyoshi Mikami ,  Masaru Yoshida

发明人： Koichi Tanaka ,  Takashi Ogura ,  Koji Ianiguchi ,  Akiyoshi Mikami ,  Masaru Yoshida

IPC分类号： C09K11/77 ,  H05B33/14 ,  H05B33/22 ,  H05B33/18

CPC分类号： C09K11/7731 ,  H05B33/14 ,  H05B33/22

摘要： A thin film electroluminescence device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer optionally interposed between the three layers, the emitting layer being made of CaS serving as a host material and doped with Eu.sup.2+ providing luminescent centers.The emitting layer comprising a novel combination of host material and luminescent center produces a red electroluminescence with a high brightness.

摘要翻译： 一种薄膜电致发光器件，包括电极层，发光层和形成在基板上的电极层，以及可选地插入在三层之间的绝缘层，发光层由作为主体材料的CaS制成，掺杂 Eu2 +提供发光中心。 包含主体材料和发光中心的新型组合的发光层产生具有高亮度的红色电致发光。

公开(公告)号：US5147683A

公开(公告)日：1992-09-15

申请号：US638841

申请日：1991-01-08

申请人： Koichi Tanaka ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Katsushi Okibayashi ,  Kousuke Terada ,  Takuo Yamashita ,  Takashi Ogura ,  Hiroaki Nakaya ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Koichi Tanaka ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Katsushi Okibayashi ,  Kousuke Terada ,  Takuo Yamashita ,  Takashi Ogura ,  Hiroaki Nakaya ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： H05B33/10 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/365 ,  H05B33/12 ,  H05B33/14

CPC分类号： C23C16/45502 ,  C23C16/306 ,  C23C16/45512 ,  C23C16/45559 ,  C23C16/45582 ,  C23C16/458

摘要： Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.

公开(公告)号：US5356657A

公开(公告)日：1994-10-18

申请号：US779235

申请日：1991-10-18

申请人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C09K11/57 ,  C09K11/88 ,  H05B33/10 ,  H05B33/14 ,  H01J9/12

CPC分类号： H05B33/14 ,  C09K11/574 ,  C09K11/883 ,  H05B33/10 ,  Y10S428/917

摘要： Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

摘要翻译： 公开了一种电致发光器件，其在衬底上包括衬底和电致发光膜，其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构，并且含有浓度（Ci）为0.5-4atm的电致发光中心元件。 的厚度为0.2微米，并且浓度（Cr）为0.15〜0.7at。 ％，并且C 1大于Cr，以及其制备方法。